ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM = 200
V
IFAVM = 6130
A
IFRMS = 9620
A
IFSM = 45000
A
VF0 = 0.80
V
rF = 0.030
mΩ
Doc. No. 5SYA1154-02 July 06
• Optimized for high current rectifiers
• Very low on-state voltage
• Very low thermal resistance
Blocking
VRRM Repetitive peak reverse voltage 200
V Half sine wave, tP = 10 ms, f = 50 Hz
VRSM Maximum peak reverse voltage 300
V Half sine wave, tP = 10 ms
IRRM Repetitive peak reverse current ≤ 50
mA T
j
= 170 °C VR = VRRM
Mechanical
FM Mounting force min.
20
kN
max.
24
kN
a Acceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 0.14
kg
DS Surface creepage distance 4
mm
Da Air strike distance 4
mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
Rectifier Diode
5SDD 40B0200
5SDD 40B0200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 4 Doc. No. 5SYA1156-02 July 06
On-state
IFAVM Max. average on-state current 6130
A
IFRMS Max. RMS on-state current 9620
A Half sine wave, Tc = 85 °C
45000
A tp
=
10
ms Before surge
IFSM Max. peak non-repetitive surge current
48000
A tp
=
8.3
ms T
j
= 170 °C
∫I2dt Max. surge current integral 10125
kA2s
tp
=
10
ms After surge:
9600
kA2s
tp
=
8.3
ms VR ≈ 0V
VF max Maximum on-state voltage ≤
1.15
V IF
=
5000
A Tj = 25 °C
VF0 Threshold voltage 0.80
V Approximation for T
j
= 170 °C
rF Slope resistance 0.030
mΩ IF
=
5 - 15
kA
Thermal characteristics
Tj Operating junction temperature range -40...170 °C
Tstg Storage temperature range -40…170 °C
≤
20
K/kW
Anode side cooled
≤
20
K/kW
Cathode side cooled
Rth(j-c) Thermal resistance
junction to case
≤
10
K/kW
Double side cooled
≤
10
K/kW
Single side cooled Rth(c-h) Thermal resistance
case to heatsink ≤
5
K/kW
Double side cooled
FM = 20…24 kN
( )
)e-(1R = (t)Z 4
1i
/t-
c-jth i
∑
=
iτ
i 1 2 3 4
Ri (K/kW)
5.28 3.30 0.87 0.55
τi (s) 0.07 0.039 0.0034 0.00013
F
M
= 20… 24 kN
1
0
-
3
1
0
-
2
1
0
-
1
1
0
0
t
[
s
]
0
2
4
6
8
10
12
Z
thJC
[
K
/
k
W
]
Double Side Cooled
F
m
=
2
0
.
.
.
2
4
k
N
5
S
D
D
4
0
B
0
2
0
0
Double side cooled
Fig. 2
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
5SDD 40B0200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 4 Doc. No. 5SYA1156-02 July 06
On-state characteristics Surge current characteristics
0
.
0
0
.
2
0
.
4
0
.
6
0
.
8
1
.
0
1
.
2
1
.
4
1
.
6
V
F
[
V
]
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
I
F
[
A
]
m
a
x
.
Tj = 170°C
min.
5SDD 40B0200
10
0
1
0
1
1
0
2
t
[
m
s
]
I
FSM
[
k
A
]
30
40
50
60
70
80
IFSM
∫i2t
∫
i
2
d
t
[
M
A
2
s
]
5
6
7
8
9
1
0
1
1
1
2
1
3
1
4
1
5
T
j
=
1
7
0
°
C
5SDD 40B0200
Fig. 3 Forward current vs. forward voltage (min.
and max. values).
Fig. 4
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
Current load capability
110 1
0
0
10
11
12
13
14
15
16
I
D
(
k
A
)
n
=
5
0
p
u
l
s
e
s
n
=
1
0
0
p
u
l
s
e
s
n
=
5
0
0
p
u
l
s
e
s
n
=
1
0
0
0
p
u
l
s
e
s
ID vs. ED, 1000 Hz square wave, T = 100 °C
Duty cycle ED (%)
c
5
S
D
D
4
0
B
0
2
0
0
Fig. 5 DC-output current with single-phase centre tap
5SDD 40B0200
Current load capacity, cont.
110 1
0
0
10
12
14
16
18
20
22
n
=
5
0
p
u
l
s
e
s
n
=
1
0
0
p
u
l
s
e
s
n
=
5
0
0
p
u
l
s
e
s
n
=
1
0
0
0
p
u
l
s
e
s
I
D
(
k
A
)
Duty cycle ED (%)
5SDD 40B0200
ID vs. ED, 1000 Hz square wave, T = 60 °C
h
Fig. 6 DC-output current with single-phase centre tap
-
+
I
D
Fig. 7
Definition of ED for typical welding
sequence
Fig. 8 Definition of ID for single-phase centre tap
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Doc. No. 5SYA1154-02 July 06
