VRRM = 200 V IFAVM = 6130 A IFRMS = 9620 A IFSM = 45000 A VF0 = 0.80 V rF = 0.030 m Rectifier Diode 5SDD 40B0200 Doc. No. 5SYA1154-02 July 06 * Optimized for high current rectifiers * Very low on-state voltage * Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms IRRM Repetitive peak reverse current 50 mA Tj = 170 C VR = VRRM Mechanical FM a Mounting force min. 20 kN max. 24 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 m Weight 0.14 kg DS Surface creepage distance 4 mm Da Air strike distance 4 mm Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 40B0200 On-state IFAVM Max. average on-state current 6130 A IFRMS Max. RMS on-state current 9620 A IFSM Max. peak non-repetitive surge current I2dt Half sine wave, Tc = 85 C 45000 A tp = 10 ms Before surge 48000 A tp = 8.3 ms Tj = 170 C 10125 kA2s tp = Max. surge current integral 10 ms 8.3 ms VR 0V 9600 kA2s tp = VF max Maximum on-state voltage VF0 Threshold voltage rF Slope resistance 1.15 V 0.80 V 0.030 m After surge: IF = 5000 A Tj = 25 C Approximation for Tj = 170 C IF = 5 - 15 kA Thermal characteristics Tj Operating junction temperature range -40...170 C Tstg Storage temperature range -40...170 C Thermal resistance junction to case 20 K/kW Anode side cooled 20 K/kW Cathode side cooled 10 K/kW Double side cooled 10 K/kW Single side cooled Rth(j-c) Rth(c-h) Thermal resistance case to heatsink 12 Fm = 20...24 kN Double Side Cooled 5 K/kW Double side cooled Z th ( j - c )(t) = ZthJC [K/kW] FM = 20...24 kN 4 R i (1 - e - t / i ) i =1 10 i 1 2 3 4 6 Ri (K/kW) 5.28 3.30 0.87 0.55 4 i (s) 0.07 0.039 0.0034 0.00013 5SDD 40B0200 8 2 0 10-3 10-2 10-1 t [s] FM = 20... 24 kN Double side cooled 100 Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 2 of 4 Doc. No. 5SYA1156-02 July 06 5SDD 40B0200 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 80 Tj = 170C 18000 i2dt [MA2s] 5SDD 40B0200 15 IFSM 16000 14 Tj = 170C 70 13 14000 12 max. min. 12000 60 11 10000 10 50 8000 9 8 6000 i t 2 40 5SDD 40B0200 4000 2000 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 7 6 30 5 0 1.6 1 10 2 10 10 VF [V] Fig. 3 t [ms] Fig. 4 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. Forward current vs. forward voltage (min. and max. values). Current load capability I D ( k A) ID vs. ED, 1000 Hz square wave, Tc = 100 C 16 n n n n 15 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 14 13 5SDD 40B0200 12 11 10 1 Fig. 5 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. page 3 of 4 Doc. No. 5SYA1156-02 July 06 5SDD 40B0200 Current load capacity, cont. I D ( k A) 22 ID vs. ED, 1000 Hz square wave, T h= 60 C n n n n 20 = 50 = 100 = 500 = 1000 pulses pulses pulses pulses 18 16 5SDD 40B0200 14 12 10 1 Fig. 6 10 Duty cycle ED (%) 100 DC-output current with single-phase centre tap ID - Fig. 7 Definition of ED for typical welding sequence + Fig. 8 Definition of ID for single-phase centre tap ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1154-02 July 06