VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 08-Dec-14 1Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D2PAK), TO-262AA
IF(AV) 2 x 15 A
VR80 V to 100 V
VF at IF0.67 V
IRM 7 mA at 125 °C
TJ max. 175 °C
Diode variation Common cathode
EAS 7.5 mJ
TO-262AATO-263AB (D2PAK)
VS-30CTQ...SPbFVS-30CTQ...-1PbF
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 30 A
VRRM 80/100 V
IFSM tp = 5 μs sine 850 A
VF15 Apk, TJ = 125 °C (per leg) 0.67 V
TJRange -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30CTQ080SPbF
VS-30CTQ080-1PbF
VS-30CTQ100SPbF
VS-30CTQ100-1PbF UNITS
Maximum DC reverse voltage VR80 100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per device IF(AV) 50 % duty cycle at TC = 129 °C, rectangular waveform 30
A
per leg 15
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7 IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
850
10 ms sine or 6 ms rect. pulse 275
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A
VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 08-Dec-14 2Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
15 A TJ = 25 °C 0.86
V
30 A 1.05
15 A TJ = 125 °C 0.67
30 A 0.82
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.55 mA
TJ = 125 °C 7.0
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 500 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -55 to +175 °C
Maximum thermal resistance,
junction to case per leg RthJC DC operation
3.25
°C/W
Maximum thermal resistance,
junction to case per package 1.63
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style TO-263AB (D2PAK) 30CTQ100S
Case style TO-262AA 30CTQ100-1
VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 08-Dec-14 3Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
100
1000
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
1.5 2.0 2.5
1.00.5
0
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.0001
0.001
0.01
0.1
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
40 1008020
060
100
1
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
80 1004020060
100
1000
TJ = 25°C
0.001
0.1
0.01
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 08-Dec-14 4Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
100
130
150
160
170
140
120
110
180
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
24 10
12 14
6
08
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
DC
0
4
3
2
1
5
6
7
Average Power Loss (W)
I
F(AV
- Average Forward Current (A)
4810
12
62
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
www.vishay.com Vishay Semiconductors
Revision: 08-Dec-14 5Document Number: 94193
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30CTQ080SPBF 50 1000 Antistatic plastic tubes
VS-30CTQ080STRRPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ080STRLPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ080-1PBF 50 1000 Antistatic plastic tubes
VS-30CTQ090SPBF 50 1000 Antistatic plastic tubes
VS-30CTQ090STRRPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ090STRLPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ090-1PBF 50 1000 Antistatic plastic tubes
VS-30CTQ100SPBF 50 1000 Antistatic plastic tubes
VS-30CTQ100STRRPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ100STRLPBF 800 800 13" diameter plastic tape and reel
VS-30CTQ100-1PBF 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions TO-263AB (D2PAK) www.vishay.com/doc?95046
TO-262AA www.vishay.com/doc?95419
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
080 = 80 V
100 = 100 V
2- Current rating (30 A)
3- Circuit conguration: C = common cathode
4- T = TO-220
5-Schottky “Q” series
6- Voltage ratings
7- S = D2PAK
-1 = TO-262
8- None = tube (50 pieces)
TRL = tape and reel (left oriented - for D2PAK only)
TRR = tape and reel (right oriented - for D2PAK only)
- PbF = lead (Pb)-free
9
1-Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 30 C T Q 100 S TRL PbF
Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
D2PAK, TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - D2PAK in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 95014
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
Outline Dimensions
Vishay Semiconductors D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
(4)
(4) Base
metal
Plating b1, b3
(b, b2)
c1
c
Section B - B and C - C
Scale: None
Section A - A
(3)
E1
(3)D1
E
B
A
A
A
c2
c
A1
Seating
plane
Lead tip
(3)
(2) (3)
(2)
A
E
(Datum A)
L1
L2
BB
CC
3
2
1
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
Modified JEDEC outline TO-262
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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