DHG 40 C 1200 HB
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
150
IA
V
F
2.24
R0.90 K/W
V
R
=
2 1 3
min.
20
t = 10 ms
Applications:
V
RRM
V1200
25T
VJ
V°C=
T
VJ
°C=mA0.4
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=95°C
d =
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
V
I
RRM
=
=1200
20
20
T
VJ
=45°C
DHG 40 C 1200 HB
V
A
1200
V1200
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
2.89
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
125
V
F0
V1.29T
VJ
=150°C
r
F
43
f = 1 MHz = °C25
mΩ
V2.24T
VJ
=°C
I
F
=A
V
20
3.15
I
F
=A40
I
F
=A40
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
15 A
T
VJ
=°C
reverse recovery time
A20
200
350
ns
(50 Hz), sine
t
rr
=200 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T=125°C
VJ
-di
F
=A/µs400/dtt
rr
V
R
=V600
T
VJ
=°C25
T=125°C
VJ
µA
8600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
g
switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110808a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 40 C 1200 HB
preliminary
I
RMS
A
per terminal 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N120
mount ing forc e with cl ip 20
Ordering Delivery Mode Quantity Code No.
Standard
Ordering Number
DHG 40 C 1200 HB 505138Tube 30
000000
YYWWZ
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
Assembly Line
D
H
G
40
C
1200
HB
Part number
Diode
Sonic Fast Recovery Diode
extreme fast
Common Cathode
TO-247AD (3)
=
=
=
1
)
Marking on Product
DHG40C1200HB
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
IXYS reserves the right to change limits, conditions and dimensions.
©
20110808a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 40 C 1200 HB
preliminary
S
Ø
P
Ø
P1 D2
D1
E1
4
123
L
L1
2x
b2
3x
b
b4
2x
e
2x
E2
D
E
Q
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
©
20110808a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DHG 40 C 1200 HB
preliminary
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
=125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 1 Typ. Forward current versus V
F
Fig. 2 Typ. reverse recov.charge Q
rr
vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
I
RM
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
=600V
10 A
20 A
40 A
Fig. 3 Typ. peak reverse current I
RM
vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
=600 V
Fig. 4 Typ. recovery time t
rr
versus di/dt
Fig. 5 Typ. recovery energy E
rec
versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
= 600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 6 Typ. transient thermal impedance
R
i
t
i
1 0.231 0.0005
2 0.212 0.004
3 0.19 0.02
4 0.267 0.15
IXYS reserves the right to change limits, conditions and dimensions.
©
20110808a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved