UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055 Features Description * RDS(on) = 0.043 ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge ( Typ. 238nC) * Low Crss ( Typ. 64pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant D G TO-264 G D S FDL Series S MOSFET Maximum Ratings TC = 25 C unless otherwise noted o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDL100N50F 500 Units V 30 V -Continuous (TC = 25oC) 100 -Continuous (TC = 100oC) - Pulsed A 60 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 100 A EAR Repetitive Avalanche Energy (Note 1) 73.5 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns 400 A (Note 2) 5000 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds TL (Note 1) - Derate above 25oC 2500 W 20 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Min. Max. RJC Symbol Thermal Resistance, Junction to Case Parameter - 0.05 RCS Thermal Resistance, Case to Sink Typ. 0.1 - RJA Thermal Resistance, Junction to Ambient - 30 (c)2009 Fairchild Semiconductor Corporation FDL100N50F Rev. A 1 Units o C/W www.fairchildsemi.com FDL100N50F N-Channel MOSFET May 2009 Device Marking FDL100N50F Device FDL100N50F Package TO-264 Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 VGS = 30V, VDS = 0V - - 100 3.0 - 5.0 V - 0.043 0.055 - 95 - S - 12000 - pF - 1700 - pF - 64 - pF VDD = 400V, ID = 50A VGS = 10V - 238 - nC - 74 - nC - 95 - nC VDD = 250V, ID = 50A RG = 4.7 - 63 - ns - 186 - ns A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A Static Drain to Source On Resistance VGS = 10V, ID = 50A gFS Forward Transconductance VDS = 20V, ID = 50A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time - 202 - ns - 105 - ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.5 V trr Reverse Recovery Time - 250 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 100A dIF/dt = 100A/s - 1.5 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 100A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDL100N50F Rev. A 2 www.fairchildsemi.com FDL100N50F N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 300 400 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 o 25 C 10 o -55 C *Notes: 1. 250s Pulse Test 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.5 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 300 0.06 VGS = 10V 0.05 VGS = 20V 0.04 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.03 *Note: TC = 25 C 0 50 100 150 ID, Drain Current [A] 200 1 0.0 250 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Coss 20000 15000 *Note: 1. VGS = 0V 2. f = 1MHz Ciss 10000 Crss 5000 0 -1 10 FDL100N50F Rev. A 1 10 VDS, Drain-Source Voltage [V] 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 25000 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.07 RDS(ON) [], Drain-Source On-Resistance o 150 C 8 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 50A 0 50 100 150 200 Qg, Total Gate Charge [nC] 250 www.fairchildsemi.com FDL100N50F N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 50A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 120 1000 30s 100 DC 100s 1ms 10ms 100 ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 10 Operation in This Area is Limited by R DS(on) 1 *Notes: o 0.1 1. TC = 25 C 80 60 40 20 o 0.01 2.5 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZJC] 0.1 0.5 0.01 0.2 0.1 0.001 t1 0.02 t2 *Notes: 0.01 o Single pulse 0.0001 -5 10 FDL100N50F Rev. A PDM 0.05 1. ZJC(t) = 0.05 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com FDL100N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDL100N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDL100N50F Rev. A 5 www.fairchildsemi.com FDL100N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDL100N50F Rev. A 6 www.fairchildsemi.com FDL100N50F N-Channel MOSFET Mechanical Dimensions Dimensions in Millimeters FDL100N50F Rev. A 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDL100N50F Rev. A 8 www.fairchildsemi.com FDL100N50F MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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