ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM =
5500
V
IF(AV)M =
175
A
IFSM =
3×103
A
V(T0) =
3.35
V
rT =
7.2
mΩ
VDC-link
=
3300
V
Fast Recovery Diode
5SDF 02D6004
PRELIMINARY
Doc. No. 5SYA1118-02 Okt. 02
• Patented free-floating technology
• Industry standard housing
• Cosmic radiation withstand rating
• Low on-state and switching losses
• Optimized for snubberless operation
Blocking
Maximum rated values 1)
Parameter Symbol Conditions Value Unit
Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tvj = 115°C 5500 V
Permanent DC voltage for 100 FIT
failure rate VDC-link Ambient cosmic radiation at sea level in open
air. (100% Duty) 3300 V
Permanent DC voltage for 100 FIT
failure rate VDC-link Ambient cosmic radiation at sea level in open
air. (5% Duty) 3900 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse current IRRM VR = VRRM, Tvj = 115°C 20 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 14 16 18 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 200 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.25 kg
Housing thickness H 26.0 26.6 mm
Surface creepage distance DS 30 mm
Air strike distance Da 20 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
5SDF 02D6004
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02 page 2 of 5
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IF(AV)M Half sine wave, TC = 70 °C
175
A
Max. RMS on-state current I
F(RMS)
275
A
Max. peak non-repetitive
surge current IFSM
3×103
A
Limiting load integral I2t
tp = 10 ms, Tvj = 115°C, VR = 0 V
45×103
A2s
Max. peak non-repetitive
surge current IFSM
8×103
A
Limiting load integral I2t
tp = 1 ms, Tvj = 115°C, VR = 0 V
32×103
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VF IF = 520 A, Tvj = 115°C 7.1 V
Threshold voltage V(T0) 3.35 V
Slope resistance rT Tvj = 115°C
IF = 200...1000 A 7.2 mΩ
Turn-on
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Peak forward recovery
voltage VFRM dIF/dt = 1000 A/µs, Tvj = 115°C
370 V
Turn-off
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Max. decay rate of on-state
current di/dtcrit IFM = A, Tvj = 115 °C
VDC-link = 3300 V
220 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery current IRM
300 A
Reverse recovery charge Qrr
µC
Turn-off energy Err
IFQ = 520 A, VDC-Link = 3300 V
di/dt = 220 A/µs, LCL = nH
CCL = µF, RCL = Ω, Tj = 115°C
1.8 J
5SDF 02D6004
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02 page 3 of 5
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj -40 115 °C
Storage temperature range T
stg -40 125 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 14...18 kN 40 K/kW
Rth(j-c)A Anode-side cooled
Fm = 14...18 kN 80 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 14...18 kN 80 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 14...18 kN 8 K/kW
Rth(c-h) Single-side cooled
Fm = 14...18 kN 16 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ith c)-th(j ∑
=
i
τ
i 1 2 3 4
Rth i(K/kW)
25.699 9.472 3.381 1.466
τi(s) 0.3802 0.0483 0.0060 0.0018
Fig. 1 Transient thermal impedance (junction to
case) vs. time in analytical and graphical form
(max. values)
5SDF 02D6004
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1118-02 Okt. 02 page 4 of 5
345678910 11
VF [V]
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
IF [A]
Tj = 115°C
0 100 200 300 400 500 600
IFQ [A]
0
50
100
150
200
250
300
350
400
Irr [A]
Tj = 115°C
diF/dt = 190 A/µs
VDClink = 3300 V
Fig. 2 Forward current vs. forward voltage Fig. 3 Diode reverse recovery current vs. turn-off
current
0100 200 300 400 500 600
IFQ [A]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Err [J]
Tj = 115°C
diF/dt = 190 A/µs
VDClink = 3300 V
01000 2000 3000 4000 5000
VDClink [V]
0
100
200
300
400
500
600
IFQ [A]
Tj = 0 - 115°C
diF/dt = 190 A/µs
VRM ≤ VRRM
Fig. 4 Diode turn-off energy per pulse vs. turn-off
current Fig. 5 Max. repetitive diode forward current
5SDF 02D6004
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1118-02 Okt. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
VFR
dIF/dt
IF (t)
IF (t)
VF (t)
tfr tfr (typ) 10 µs
Qrr
IRM
-dIF/dt
VF(t), IF (t)
VF (t)
VR (t)
t
Fig. 6 General current and voltage waveforms
Fig. 7 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
Doc. Nr Titel
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
