BCY70...BCY72 PNP Silicon Epitaxial Planar Transistors for industrial switching and amplifier applications The BCY71 and BCY71A feature low noise figures. Absolute Maximum Ratings t 33 a S max.5.8@ < ee max05 Metal case JEDEC TO-18 18 A3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Symbol Value Unit Collector Emitter Voltage BCY70 Vceo 40 Vv BCY71, BCY71A Vceo 45 V BCY72 Vceo 25 V Collector Base Voltage BCY70 Vcgo 50 Vv BCY71, BCY71A Vocso 45 Vv BCY72 Vecso 25 V Emitter Base Voltage Veso 5 Vv Collector Current lom 200 mA Power Dissipation at Tamp = 25 C Prot 360 mW Junction Temperature T; 200 C Storage Temperature Range Ts 65... +200 C 148 BCY70...BCY72 Characteristics at T.., = 25C Symbol Min. Typ. Max. Unit Collector Cutoff Current at -Vop = 50 V BCY70 lcBo - 10 500 nA at-Vcg = 45 V BCY71, BCY71A lcBo - 10 500 nA at-Vog = 40 V BCY70 lcso > 0.5 10 nA BCY71, BCY71A Icgo - 0.5 50 nA at Vog =25V BCY72 lcogo - 10 500 nA atVog = 20 V BCY72 IcBo - 0.5 50 nA at -Vcg = 40 V, Tj = 100C BCY70 lcsBo - 0.1 0.5 pA BCY71, BCY71A ~IcBo - 0.1 2 BA at Vog = 20 V, Tj = 100C BCY72 lcBo - 0.1 2 pA Emitter Cutoff Current at-Veg = 5 V leBo - 5 500 nA at-Vig =4V leso - 0.3 10 nA at-Vep = 4V, T; = 100C leBo - 0.02 2 pA Collector Cutoff Current BCY70 Icev _ 1 20 nA at Vce = 50V,-Vep =3V DC Current Gain at-Vce = 1V,-lo = 10 vA BCY71, BCY71A Are 40 - _ - at Vece =1V,-Ilc =0.1 mA BCY70 hee 40 - - - BCY71, BCY71A hee 80 - - - at-Vce = 1V,-lo =1mMA BCY70 hee 45 - - - BCY71, BCY71A hee 90 _ _ - BCY72 hee 40 _ _ = at Vee =1V, Ilc = 10mA BCY70 Nee 50 - _- _- BCY71, BCY71A Hee 100 - 600 - BCY72 hee 50 - - - at Voe =1V, -lo = 50 mA BCY70 hee 15 - - - Collector Saturation Voltage atlo = 10 mA, -lg = 1 MA ~Vcesat - - 250 mV at-lc = 50mA, -lp = 5 mA Vcesat - - 500 mV Base Saturation Voltage BCY70, BCY71 at-lb = 10 mA, -lp = 1mMA Veesat 600 - 900 mV at-Ic = 50 mA, -Ilgp =5MA VeeEsat - - 1200 mV Collector Base Capacitance atVog = 10 V, f = 1 MHz Ccso - - 6 pF Emitter Base Capacitance atVeg = 1 V, f = 1 MHz Ceso - 8 pF Gain Bandwidth Product at~Vce = 20 V, -Ilc = 10 mA, f = 100 MHz BCY70 fr 250 - MHz BCY71, BCY72 fr 200 - - MHz BCY71A fr 300 = - MHz Noise Figure atVee =5V, lIo = 0.1 mA, f= 10Hz...10 kHz, Re = 2ko BCY70, BCY72 F _ - 6 dB BCY71, BCY71A F - = 2 dB Switching Times atI, = 10 mA, Ip = Igo = 1 MA Turn-On Time BCY70, BCY72 ton - - 65 ns Turn-Off Time BCY70, BCY72 tot - _ 420 ns Storage Time BCY70, BCY72 ts - - 350 ns 149