2N4923
Silicon NPN Transistor
Audio Power Amp, Switch
TO−126 Type Package
Description:
The 2N4923 is a silicon NPN transistors in a TO−126 plastic package designed for use as driver
circuits, switching, and amplifier applications.
Features:
DLo saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A
DExcellent Power Dissipation: PD = 30W @ TC = +25C
DExcellent Safe Operating Area
DGain Specified to IC = 1A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 80V......................................................
Collector−Base Voltage, VCB 80V.........................................................
Emitter−Base Voltage, VEB 5V...........................................................
Continuous Collector Current (Note 1), IC1A (3A)...........................................
Continuous Base Current, IB1A..........................................................
Total Power Dissipation (TC = +25C), PD30W............................................
Derate Above 25C 240mW/C.....................................................
Operating Junction Temperature Range, TJ−65 to +150C..................................
Storage Temperature Range, Tstg −65 to +150C..........................................
Thermal Resistance, Junction−to−Case (Note 2), RthJC 4.16C/W............................
Note 1. The 1A maximum IC value is based upon JEDEC current gain requirements.
The 3A maximum value is based upon actual current handling capability of the device.
Note 2. Recommend use of thermal compound for lowest thermal resistance.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 3 80 − − V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 − − 0.5 mA
ICEX VCE = 80V, VEB(off) = 1.5V − − 0.1 mA
VCE = 80V, VEB(off) = 1.5V, TC = +125C− − 0.5 mA
ICBO VCB = 80V, IE = 0 − − 0.1 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 − − 1.0 mA
Note 3. Pulse test: Pulse Width = 300s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain hFE IC = 50mA, VCE = 1V 40 − −
IC = 500mA, VCE = 1V 30 −150
IC = 1A, VCE = 1V 10 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 100mA − − 0.6 V
Base−Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 100mA − − 1.3 V
Base−Emitter ON Voltage VBE(on) IC = 1A, VCE = 1V − − 1.3 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTIC = 250mA, VCE = 10V, f = 1MHz 3.0 − − MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz − − 100 pF
Small−Signal Current Gain hfe IC = 250mA, VCE = 10V, f = 1MHz 25 − −
Note 3. Pulse test: Pulse Width 300s, Duty Cycle 2%.
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
ECB