MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules 3 VRSM VRRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 Type MDO MDO MDO MDO MDO MDO 500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 Conditions Maximum Ratings 880 560 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 15000 16000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 13000 14400 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 1125000 1062000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 845000 813000 A2s A2s -40...140 140 -40...125 C C C 3000 3600 V~ V~ IFRMS IFAVM TVJ = TVJM TC = 85C; 180 sine IFSM TVJ = 45C VR = 0 I2t 2 Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 z z z z z Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies z z z TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Weight Mounting torque (M6) Terminal connection torque (M8) Typical including screws 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 650 g Symbol IRRM Conditions TVJ = TVJM; VR = VRRM Characteristic Values mA 30 VF IF VT0 rT For power-loss calculations only (TVJ = TVJM) RthJC RthJK DC current DC current dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration = 1200 A; TVJ = 25C 1.3 V 0.8 0.38 V m 0.072 0.096 K/W K/W 21.7 9.6 50 mm mm m/s2 z Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits z z z Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2010 IXYS All rights reserved 20100203a 1-3 http://store.iiic.cc/ MDO 500 14000 107 1000 VR = 0V 900 DC 180 sin 120 60 30 12000 50 Hz 80 % VRRM TVJ = 45C TVJ = 140C 10000 ITSM 800 2 As 700 IFAVM 2 8000 It [A] 10 6 2 6000 As [A] TVJ = 45C 500 400 300 TVJ = 140C 4000 600 200 2000 100 0 0.001 10 0.01 0.1 1 5 0 1 10 0 25 50 Fig. 2 I2t versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration 75 100 125 150 TC [C] t [ms] t [s] Fig. 3 Maximum forward current at case temperature 1200 1600 RthKA K/W 1400 0.03 0.07 0.12 0.2 0.3 0.4 0.6 1000 800 Ptot 1200 IF 600 [A] DC 180 sin 120 60 30 [W] 400 1000 800 600 400 TVJ = 125C 200 TVJ = 25C 200 0 0 200 400 600 800 0 25 50 IFAVM [A] 75 100 125 150 TA [C] 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF [V] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current IF versus VF 3200 R 2800 RthKA K/W L 0.015 0.03 0.04 0.05 0.07 0.01 0.14 2400 Ptot 2000 1600 [W] 1200 Circuit B2 4xMDO500 800 400 0 0 300 600 900 1200 IdAVM [A] 0 25 50 75 100 125 150 TA [C] Fig. 6 Single phase rectifier bridge:Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, test conditions and dimensions (c) 2010 IXYS All rights reserved 20100203a 2-3 http://store.iiic.cc/ MDO 500 5000 RthKA K/W 4500 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 3500 Ptot 3000 2500 [W] 2000 Circuit B6 6xMDO500 1500 1000 500 0 0 300 600 900 1200 1500 0 25 50 IdAVM [A] 75 100 125 150 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature RthJC for various conduction angles d: 0.12 d DC 180 120 60 30 0.10 0.08 ZthJC RthJC (K/W) 0.072 0.0768 0.081 0.092 0.111 0.06 30 60 120 180 DC [K/W] 0.04 Constants for ZthJC calculation: i 1 2 3 4 0.02 0.00 10-3 10-2 10-1 100 101 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.0054 0.098 0.54 12 102 t [s] Fig. 7 Transient thermal impedance junction to case RthJK for various conduction angles d: 0.14 d DC 180 120 60 30 0.12 0.10 0.08 ZthJK RthJK (K/W) 0.096 0.1 0.105 0.116 0.135 Constants for ZthJK calculation: 0.06 30 60 120 180 DC [K/W] 0.04 0.02 0.00 10-3 10-2 10-1 100 i 101 102 1 2 3 4 5 Rthi (K/W) ti (s) 0.0035 0.0186 0.0432 0.0067 0.024 0.0054 0.098 0.54 12 12 t [s] Fig. 8 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions (c) 2010 IXYS All rights reserved 20100203a 3-3 http://store.iiic.cc/