DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 12 2004 Oct 11
DISCRETE SEMICONDUCTORS
MPSA42; MPSA43
NPN high-voltage transistors
db
ook, halfpage
M3D186
2004 Oct 11 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors MPSA42; MPSA43
FEATURES
•Low current (ma x. 10 0 mA)
•High voltage (max. 300 V).
APPLICATIONS
•Video
•Telephony
•Professional communication equipment.
DESCRIPTION
NPN high-voltage transis tor in a TO-92; SOT54 plas tic
package. PNP complemen t: MPSA92.
PINNING
PIN DESCRIPTION
1collector
2base
3emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
MPSA42 SC-43A plastic sing le-ended leaded (through hole) package; 3 leads SOT54
MPSA43
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
MPSA42 −300 V
MPSA43 −200 V
VCEO collector-emitter voltage open base
MPSA42 −300 V
MPSA43 −200 V
VEBO emitter-base voltage open collector −6 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C−500 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
2004 Oct 11 3
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistors MPSA42; MPSA43
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed- circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current
MPSA42 VCB = 200 V; IE = 0 A −100 nA
MPSA43 VCB = 160 V; IE = 0 A −100 nA
IEBO emitter-base cu t-off current
MPSA42 VEB = 6 V; IC = 0 A −100 nA
MPSA43 VEB = 4 V; IC = 0 A −100 nA
hFE DC current gain VCE = 10 V; note 1
IC = 1 mA 25 −
IC = 10 mA 40 −
IC = 30 mA 40 −
VCEsat collector-emitter saturation voltage IC = 20 mA; IB = 2 mA; note 1 −500 mV
VBEsat base-emitt er saturatio n voltage IC = 20 mA; IB = 2 mA; note 1 −900 mV
Cccollector capacitance VCB = 20 V; IE = ie = 0 A; f = 1 MHz
MPSA42 −3pF
MPSA43 −4pF
fTtransition frequen c y VCE = 20 V; IC = 10 mA; f = 100 MHz 50 −MHz
2004 Oct 11 4
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistors MPSA42; MPSA43
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Oct 11 5
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistors MPSA42; MPSA43
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this do cument may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t s pecification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informa tio n.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict between information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art of any quotation or cont ra ct, is b elieve d to be accurate and reli a ble and may be chan ged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other ind ustrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/05/pp6 Date of release: 2004 Oct 11 Document orde r number: 9397 750 13611
