| 1N4678 thru Microsemi Corp. 1N4717 # The diode experts SCOTTSDALE, AZ For more information call: (602) 941-6300 FEATURES SILICON 250 mW ZENER DIODES LOW OPERATING CURRENT AT 5SOuA STANDARD + 5% VOLTAGE TOLERANCE GUARANTEED VOLTAGE REGULATION ALSO AVAILABLE IN 00-35 PACKAGE MAXIMUM RATINGS Junction and Storage Temperature: 65C to +200C DC Power Dissipation: 250mW (Capable of 400mW in DO-7 package supplied) Power Derating: 1.66mW/C above 50C Ambient (2.28mW/C above 25C in DO-7) Forward Voltage @ 100mA: 1.5 Volts * ELECTRICAL CHARACTERISTICS @ 25C , - JEDEC NOMINAL ZENER MAXIMUM MAXIMUM | _ TYPE ZENER TEST VOLTAGE REveRsE | MiuclmuM 0.107 Max, ~~ NUMBER VOLTAGE CURRENT | REGULATION | LEAKAGE | Cierny 2.718 DIA. (NOTE 3) (NOTE 2 & 3) CURRENT v | 1, 00 (NOTE 1) Z ZT Av2 Ip @ Vp lou 000 wan, VOLTS * UA VOLTS HA VOLTS mA 1N4678 1.8 50 0.70 75 1.0 120.0 1N4679 2.0 50 0.70 5.0 1.0 110.0 1N4680 2.2 50 0.75 4.0 1.0 100.0 t___. 1N4681 2.4 50 0.80 2.0 1.0 95.0 POLARITY 9.300 way, 1N4682 27 50 0.85 1.0 1.0 90.0 MARK 0 1N4683 3.0 50 0.90 08 1.0 85.0 (CATHODE) I 1N4684 3.3 50 0.95 75 15 80.0 | 1N4685 3.6 50 0.95 75 2.0 75.0 1N4686 39 50 0.97 5.0 2.0 70.0 1.008 1N4687 4.3 50 0.99 4.0 2.0 65.0 25.an9 MIN. 1N4688 47 50 0.99 10.0 3.0 60.0 0,018/0.022 py, || 1N4689 5.1 50 0.97 10.0 3.0 55.0 0.457'0.559 1N4690 5.6 50 0.96 10.0 4.0 50.0 1N4691 6.2 50 0.95 10.0 5.0 45.0 a 1N4692 68 50 0.90 10.0 5.1 35.0 1N4693 75 50 0.75 10.0 5.7 31.8 Cn 1 1N4694 8.2 50 0.50 1.0 6.2 29.0 a are i 1N4695 87 50 0.10 1.0 6.6 27.4 All dimensions in| 1N4696 9.4 50 0.08 1.0 69 26.2 1N4697 10.0 50 0.10 1.0 716 24.8 MECHANICAL 1N4698 11.0 50 0.11 0.05 | 8.4 21.6 CHARACTERISTICS 1N4699 12.0 50 0.12 0.05 | 9.1 20.4 1N4700 13.0 50 0.13 0.05 | 98 19.0 1N4701 14.0 50 0.14 0.05 | 10.6 17.5 . 1N4702 15.0 50 0.15 0.05 | 11.4 16.3 CASE: Hermetically sealed glass 4N4703 16.0 50 0.16 0.05 | 12.1 15.4 case. DO-7. 1N4704 17.0 50 0.17 0.05 | 12.9 14.5 1N4705 18.0 50 0.18 0.05 | 13.6 13.2 FINISH: All external surfaces are 1N4706 19. 50 0.1 0.05 | 14.4 12.5 orrosion resistant and leads sol- 1N4707 20.0 50 0.20 0.01 | 15.2 11.9 le able T . 1N4708 22.0 50 0,22 0.01 | 16.7 10.8 inanne aa0 Bs be Boriisal 622 THERMAL RESISTANCE: 300C/ 1N4710 25,0 50 0.25 0.01} 19.0 95 oN , 1N4711 27.0 50 0.27 0.01 | 20.4 8.8 W (Typical) junction to lead at 1N4712 28.0 50 0.28 0.01 | 21.2 8.5 0.375-inches from body. 1N4713 30.0 50 0.30 0.01 | 22.8 79 : 1N4714 33.0 50 0.33 0.01} 25.0 7.2 POLARITY: Diode to be operated nazis eo 2 0.36 0.01} 273 86 with the banded end positive 1N4717 43.0 50 0.43 0.01 | 32.6 55 with respect to the opposite end. * JEDEC Registered Data WEIGHT: 0.2 grams. MOUNTING POSITION: Any. NOTE1 Alltypes as shown are + 5% tolerance. Also available in 2% and 1% tolerance, suffix C and D respectively. NOTE 2 AVz@ 100uA minus Vz @ 10yuA. NOTE 3 The electrical characteristics are measured after allowing the device to sta- 5-31 bilize for 20 seconds when mounted with 3/8 minimum lead length from the base.