2N4400
2N4401
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4400 and
2N4401 are silicon NPN transistors designed for
general purpose amplifier and switching applications.
PNP complementary types are 2N4402 and 2N4403.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4400 2N4401
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICEV V
CE=35V, VEB=0.4V - 100 - 100 nA
BVCBO I
C=0.1mA 60 - 60 - V
BVCEO I
C=1.0mA 40 - 40 - V
BVEBO I
E=0.1mA 6.0 - 6.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.40 - 0.40 V
VCE(SAT) I
C=500mA, IB=50mA - 0.75 - 0.75 V
VBE(SAT) I
C=150mA, IB=15mA 0.75 0.95 0.75 0.95 V
VBE(SAT) I
C=500mA, IB=50mA - 1.2 - 1.2 V
hFE V
CE=1.0V, IC=0.1mA - - 20 -
hFE V
CE=1.0V, IC=1.0mA 20 - 40 -
hFE V
CE=1.0V, IC=10mA 40 - 80 -
hFE V
CE=1.0V, IC=150mA 50 150 100 300
hFE V
CE=2.0V, IC=500mA 20 - 40 -
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 20 250 40 500
fT V
CE=10V, IC=20mA, f=100MHz 200 - 250 - MHz
Cob V
CB=5.0V, IE=0, f=100kHz - 6.5 - 6.5 pF
Cib V
BE=0.5V, IC=0, f=100kHz - 30 - 30 pF
ton V
CC=30V, VEB(OFF)=2.0V, IC=150mA,
I
B1=15mA - 35 - 35 ns
toff V
CC=30V, IC=150mA, IB1=IB2=15mA - 255 - 255 ns
R2 (2-December 2014)
www.centralsemi.com