2N7002DWA
Document number: DS36120 Rev. 7 - 3
1 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002DWA
NEW PROD UCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
Package
ID
TA = +25°C
60V
8Ω @ VGS = 5V
SOT363
170mA
6Ω @ VGS = 10V
200mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
HBM Class 1C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4 & 5)
Part Number
Compliance
Case
Packaging
2N7002DWA-7
Standard
SOT363
3,000/Tape & Reel
2N7002DWA-13
Standard
SOT363
10,000/Tape & Reel
2N7002DWAQ-7
Automotive
SOT363
3,000/Tape & Reel
2N7002DWAQ-13
Automotive
SOT363
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Internal Schematic
S1
D1
D2
S2
G1
G2
MM0 YM
MM0 YM
MM1 YM
MM1 YM
MM4 YM
MM4 YM
MM0 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
MM1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
HBM Class 1C
NOT RECOMMENDED FOR NEW
DESIGN USE DMN65D8LDW
2N7002DWA
Document number: DS36120 Rev. 7 - 3
2 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002DWA
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
180
140
mA
Continuous Drain Current (Note 6) VGS = 5V
Steady
State
TA = +25°C
TA = +70°C
ID
150
120
mA
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
200
160
mA
Continuous Drain Current (Note 7) VGS = 5V
Steady
State
TA = +25°C
TA = +70°C
ID
170
140
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
700
mA
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
435
°C/W
Total Power Dissipation (Note 7)
PD
400
mW
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
330
°C/W
Thermal Resistance, Junction to Case (Note 7)
RθJC
139
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
—
—
1.0
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
—
—
±5
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
0.8
—
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
—
—
8
Ω
VGS = 5.0V, ID = 0.115A
—
—
6
Ω
VGS = 10.0V, ID = 0.115A
Forward Transconductance
gFS
80
—
—
mS
VDS = 10V, ID = 0.115A
Diode Forward Voltage
VSD
—
0.8
1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
22.0
—
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
—
3.2
—
Reverse Transfer Capacitance
Crss
—
2.0
—
Gate Resistance
RG
—
88
—
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge VGS = 10V
Qg
—
0.87
—
nC
VGS = 10V, VDS = 30V,
ID = 150mA
Total Gate Charge VGS = 4.5V
Qg
—
0.43
—
Gate-Source Charge
Qgs
—
0.11
—
Gate-Drain Charge
Qgd
—
0.11
—
Turn-On Delay Time
tD(on)
—
3.3
—
nS
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
Turn-On Rise Time
tr
—
3.2
—
Turn-Off Delay Time
tD(off)
—
12.0
—
Turn-Off Fall Time
tf
—
6.3
—
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2N7002DWA
Document number: DS36120 Rev. 7 - 3
3 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002DWA
NEW PROD UCT
0
0.1
0.2
0.3
0.4
0.5
0.6
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 5.0V
GS V = 4.0V
GS
0.1
0.2
0.3
0.4
0.5
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.5
1.5
2.5
3.5
4.5
0 0.1 0.2 0.3 0.4 0.5 0.6
0
1.0
2.0
3.0
4.0
5.0
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 5V
GS
V = 10V
GS
0
1
2
3
4
5
6
7
8
9
0 2 4 6 8 10 12 14 16 18 20
10
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = 350mA
D
0
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
10
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.5
1.5
2.5
0
1.0
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = V
I = 115mA
GS
D
5.0
V = V
I = 115mA
GS
D
10
2N7002DWA
Document number: DS36120 Rev. 7 - 3
4 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002DWA
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = V
I = 115mA
GS
D
5.0
V = V
I = 115mA
GS
D
10
1.3
1.6
1.9
2.2
2.5
1.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I = 1mA
D
I = 250µA
D
0.0001
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0.01
0.1
1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 25°C
A
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
DS
-I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = -8V
Single Pulse
GS
DUT on 1 * MRP Board
SOT363
Dim
Min
Max
Typ
A
0.10
0.30
0.25
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65 Typ
F
0.40
0.45
0.425
H
1.80
2.20
2.15
J
0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.22
0.11
0°
8°
-
All Dimensions in mm
A
M
JL
D
B C
H
K
F
2N7002DWA
Document number: DS36120 Rev. 7 - 3
5 of 5
www.diodes.com
January 2015
© Diodes Incorporated
2N7002DWA
NEW PROD UCT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
Dimensions
Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
X
Z
Y
C1
C2
C2
G
