Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-2 43) SMD plastic package.
NPN complement: PBSS8110X.
1.2 Features
SOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability ICand ICM
High efficiency leading to less heat generatio n
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
DC-to-DC conversion
1.4 Quick reference data
[1] Pulse test: tp≤300 μs; δ≤0.02.
PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 02 — 22 November 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −100 V
ICcollector current (DC) - - −1A
ICM peak collector current single pulse;
tp≤1ms --−3A
RCEsat collector-emitter saturation
resistance IC=−1A;
IB=−100 mA [1] -170320mΩ
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 2 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1emitter
2 collector
3base
321
0
06aaa23
1
2
1
3
Table 3. Ordering i nformation
Type number Package
Name Description Version
PBSS9110X SC-62 plastic surface mounted package; collector pad for good
heat transfer; 3 leads SOT89
Table 4. Marking codes
Type number Marking code[1]
PBSS9110X *4C
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 3 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 6cm2 collector mounting pad.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −120 V
VCEO collector-emitter voltage open base - −100 V
VEBO emitter-base voltage open collector - −5V
ICcollector current (DC) - −1A
ICM peak collector current single pulse;
tp≤1ms -−3A
IBbase current (DC) - −0.3 A
Ptot total power dissipation Tamb ≤25 °C[1] -0.55W
[2] -1.4W
[3] -2.0W
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
T
amb
(°C)
0 16012040 80
006aaa408
0.8
1.2
0.4
1.6
2.0
P
tot
(W)
0
(1)
(2)
(3)
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 4 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
[3] Device mounted on a ceramic PCB, AL2O3, standard footprint.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] --227K/W
[2] --89K/W
[3] --63K/W
Rth(j-sp) thermal resistance from
junction to solder point --16K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values
006aaa409
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
duty cycle =
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 5 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
FR4 PCB, mounting pad for collector 6cm2
Fig 3. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values
006aaa411
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
duty cycle =
006aaa410
10
1
102
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1
tp (s)
10−3103
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
duty cycle =
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 6 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test: tp≤300 μs; δ≤0.02.
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector -base cut-off
current VCB =−80 V; IE=0A - - −100 nA
VCB =−80 V; IE=0A;
Tj=150°C--−50 μA
ICES collector-emitter cut-off
current VCE =−80 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current VEB =−4V; I
C=0A - - −100 nA
hFE DC curren t ga i n VCE =−5V; I
C=−1 mA 150 - -
VCE =−5V; I
C=−250 mA 150 - -
VCE =−5V; I
C=−0.5 A [1] 150 - 450
VCE =−5V; I
C=−1A [1] 125 - -
VCEsat collector-emitter
saturation voltage IC=−250 mA;
IB=−25 mA --−120 mV
IC=−500 mA;
IB=−50 mA --−180 mV
IC=−1A; I
B=−100 mA [1] --−320 mV
RCEsat collector-emitter
saturation resistance IC=−1A; I
B=−100 mA [1] -170320mΩ
VBEsat base-emitter saturation
voltage IC=−1A; I
B=−100 mA - - −1.1 V
VBEon base-emitter turn-on
voltage IC=−1A; V
CE =−5V - - −1.0 V
tddelay time VCC =−10 V; IC=−0.5 A;
IBon =−0.025 A;
IBoff =0.025A
-20-ns
trrise time - 60 - ns
ton turn-on time - 80 - ns
tsstorage time - 290 - ns
tffall time - 120 - n s
toff turn-off time - 410 - ns
fTtransition frequency IC=−50 mA; VCE =−10 V;
f=100MHz 100 - - MHz
Cccollector capacitance IE=i
e=0A; V
CB =−10 V;
f=1MHz --17pF
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 7 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
VCE =−10 V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
VCE =−10 V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 5. DC current gain as a function of collector
current; typical values Fig 6. Base-emitter volt age as a function of collector
current; typical values
IC/IB=10
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB=50
(2) IC/IB=20
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 8. Collector-emitter sa tu ration voltage as a
function of collector current; typical values
001aaa376
200
400
600
hFE
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
001aaa377
−0.4
−0.8
−1.2
VBE
(V)
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
001aaa378
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)
001aaa380
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 8 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
Tamb =25°C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values Fig 10. Base-emitter saturatio n vo ltage as a function
of collector current; typi ca l values
IC/IB=10
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Tamb =25°C
(1) IC/IB=50
(2) IC/IB=20
Fig 11. Collector-emitter saturation re sistance as a
function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
001aaa381
IC (mA)
−10−1−104
−103
−1−102
−10
−1
−10
VBEsat
(V)
−10−1
(1)
(2)
(3)
001aaa379
IC (mA)
−10−1−104
−103
−1−102
−10
−1
−10
VBEsat
(V)
−10−1
001aaa382
IC (mA)
−10−1−104
−103
−1−102
−10
1
10
102
103
RCEsat
(Ω)
10−1
(1)
(2)
(3)
001aaa383
IC (mA)
−10−1−104
−103
−1−102
−10
1
10
102
103
RCEsat
(Ω)
10−1
(1)
(2)
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 9 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Fig 13. Collector current as a function of collector-emitter voltage; typical values
VCE (V)
0−5−4−2−3−1
001aaa384
−0.8
−1.2
−0.4
−1.6
−2
IC
(A)
0
IB (mA) = −45
−40.5
−36
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 10 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
8. Test information
Fig 14. BISS transistor switching time definition
VCC =−10 V; IC=−0.5 A; IBon =−0.025 A; IBoff = 0.025 A
Fig 15. Test circuit f or swi t ch ing times
006aaa266
−IBon (100 %)
−IB
input pulse
(idealized waveform)
−IBoff
90 %
10 %
−IC (100 %)
−IC
td
ton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
RC
R2
R1
DUT
mgd624
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 11 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 15.
Fig 16. Package outline SOT89 (SC-62/TO-243)
06-08-29Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5
0.48
0.35
0.44
0.23
0.53
0.40
2.6
2.4 4.25
3.75
123
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
1000 4000
PBSS9110X SOT89 8 mm pitch, 12 mm tape and reel -115 -135
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 12 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
11. Soldering
12. Mounting
SOT89 standard mounting conditions for reflow soldering
Dimensions in mm
Fig 17. Reflow soldering footprint SOT 89 (SC-62/TO-243)
msa442
1.00
(3x)
4.85
4.60
1.20
4.75
0.60 (3x)
0.70 (3x)
3.70
3.95
1.20
0.50
1.70
132
0.20
0.85
1.20
1.20
1.90
2.00
2.25
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig 18. FR4 PCB, standard footprint Fig 19. FR4 PCB, mounting pad for
collector 6cm2
001aaa234
2.5 mm
5 mm
1.6 mm
0.5 mm
1 mm
3.96 mm
3 mm
2.5 mm
1 mm
40
mm
32 mm
001aaa235
2.5 mm
5 mm
1.6 mm
0.5 mm
1 mm
3.96 mm
30 mm
20
mm
40
mm
32 mm
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 13 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
13. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS9110X_2 20091122 Product data sheet - PBSS9110X_1
Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Figure 12 “Collector-emitter satura tion resistance as a function of collector current; typical
values”: updated
•Figure 13 “Collector current as a function of collector-emitter voltage; typical values”:
updated
PBSS9110X_1 20050502 Product data sheet - -
PBSS9110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 14 of 15
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre va il.
14.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors d oes not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environme ntal
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sal e, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of rele ase: 22 November 2009
Document identifier: PBSS9 110X_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Packing information . . . . . . . . . . . . . . . . . . . . 11
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15 Contact information. . . . . . . . . . . . . . . . . . . . . 14
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
