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DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5
May 2015
DF005S - DF10S
Bridge Rectifiers
Features
• Maximum Surge Rating: IFSM = 50 A
I2t = 10 A2Sec
• Optimized VF: Typical 0.94 V at 1.5 A, 25°C
• Glass Passivated Junctions
• Lead Free Compliant to EU RoHS 2002/95/EU Directives
• Green Molding Compound: IEC61249
• Qualified with IR Reflow and Wave Soldering
• UL Certified, UL #E258596
Ordering Information
Part Number Top Mark Package Packing Method
DF005S DF005S SDIP 4L Tape and Reel
DF01S DF01S SDIP 4L Tape and Reel
DF02S DF02S SDIP 4L Tape and Reel
DF04S DF04S SDIP 4L Tape and Reel
DF06S DF06S SDIP 4L Tape and Reel
DF08S DF08S SDIP 4L Tape and Reel
DF10S DF10S SDIP 4L Tape and Reel
Description
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS family sets a standard in perfor-
mance.
The design offers an surge rating of 50 A. This is impor-
tant when improving reliability and increasing efficiency.
High efficiency designs strive to reduce circuit resis-
tance, which, unfortunately can result in increased
inrush surge. As such high surge current ratings can be
required to maintain or improve reliability.
The design also offers better efficiency by achieving a
1.5 A VF of 1.1 V maximum at 25°C. This lower VF also
supports cooler and more efficient operation.
Finally, the DFxS achieves all this in a SDIP surface
mount form factor, reducing board spac e and volumetric
requirements vs. competitive devices.
+
-
~
~
IN
OUT
SDIP
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
1. Device mounted on PCB with 0.5 inch × 0.5 inc h (13 mm × 13 mm).
2. The ther mal resistances ( R θJA & ψJL) are characterized with the device mounted o n the following FR4 printed ci rcu it
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
Symbol Parameter Value Unit
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VDC DC Reverse Voltage at Rated IR50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward Current
at TA = 4 0°C1.5 A
IFSM
Non-Repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine Wave 50 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Symbol Parameter Value Unit
PDPower Dissipation 3.1 W
RθJA Thermal Resistance,
Junction-to-Ambient
Single-Die Measurement(1)
(Maximum Land Pattern: 13 x 13 mm) 62
°C/W
Multi-Di e Measurement(2)
(Maximum Land Pattern: 13 x 13 mm) 50
Multi-Di e Measurement(2)
(Minimum Land Pattern: 1.3 x 1.5 mm) 105
ψJL Thermal Characterization
Parameter, Junction to Lead Single-Die Measurement(2)
(Maximum and Minimum Land Pattern) 27 °C/W
Figure 1. Maximum Pads of 2 oz Copper Figure 2. Minimum Pads of 2 oz Copper
F
F
S
S
F
F
S
S
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage, per Element IF = 1.5 A 1.1 V
IRReverse Current, per Element at Rated VRTA = 25°C5.0
μA
TA = 125°C500
I2t Rating for Fusing (t < 8.35 ms) 10 A2s
CJTypica l Capacitance, per Leg VR = 4.0 V,
f = 1.0 MHz 25 pF
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 4
Typical Performance Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Forward Current Derating Curve
Figure 5. Forward Volta ge Characteris tics Figure 6. Reverse Current vs. Reverse Voltage
12 51020 50100
0
10
20
30
40
50
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
20 40 60 80 100 120 140 160
0
0.5
1
1.5
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
Based on RθJA, per Leg
0.01
0.1
1
10
0.20.30.40.50.60.70.80.91.01.11.2
TJ= -55 oC
TJ=125 oC
TJ=150 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
200 300 400 500 600 700 800 900 1000
1E-3
0.01
0.1
1
10
100
TJ=-55 oC
TJ=150 oC
TJ=25 oC
Reverse Current, IR[μA]
Reverse Voltage, VR[V]
TJ=125 oC
DF005S - DF10S — Bridge Rectifiers
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S - DF10S Rev. 1.5 5
Physical Dimensions
Figure 7. 4-LEAD, SDIP, 6.5 MM WIDE
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www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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