PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6732 ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO VALUE -100 UNIT V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb = 25C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -100 V IC=-100 A, IE=0 V(BR)CEO -80 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-1mA, IC=0 Collector Cut-Off Current ICBO -0.1 A VCB=-80V, IE=0 Emitter Cut-Off Current IEBO -10 A VEB=-5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.35 V IC=-350mA, IB=-35mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-350mA, VCE=-2V* Static Forward Current hFE Transfer Ratio 100 100 300 IC=-10mA, VCE=-2V* IC=-350mA, VCE=-2V* Transition Frequency fT 50 500 MHz IC=-200mA, VCE=-5V f=20MHz Collector-Base Capacitance CCB 20 pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-11