BSM 75 GD 120 DN2 IGBT Power Module * Solderable Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 103 TC = 80 C 75 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 206 TC = 80 C 150 Power dissipation per IGBT W Ptot TC = 25 C 520 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.235 Diode thermal resistance, chip case RthJCD 0.55 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-20-1997 BSM 75 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 3 mA 4.5 5.5 6.5 VGE = 15 V, IC = 75 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 75 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 1 1.5 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 4 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 320 AC Characteristics Transconductance VCE = 20 V, IC = 75 A Input capacitance 31 nF - 5.1 - - 0.72 - - 0.38 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-20-1997 BSM 75 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15 Rise time - 30 60 - 70 140 - 450 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15 Fall time tf VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15 Free-Wheel Diode Diode forward voltage V VF IF = 75 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 75 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -900 A/s, Tj = 125 C Reverse recovery charge - 0.125 C Qrr IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s, Tj = 25 C diF/dt = -800 A/s, Tj = 125 C - 3.2 - diF/dt = -900 A/s, Tj = 25 C - 10 - 3 Oct-20-1997 BSM 75 GD 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 550 W Ptot A 450 IC 400 t = 14.0s p 10 2 100 s 350 300 10 1 250 1 ms 200 150 10 ms 10 0 100 DC 50 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 120 A K/W 100 IC ZthJC 90 10 -1 80 70 10 -2 60 D = 0.50 50 0.20 40 0.10 10 -3 30 0.05 single pulse 0.02 20 0.01 10 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-20-1997 BSM 75 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 150 150 A A 130 IC 120 110 100 130 17V 15V 13V 11V 9V 7V IC 120 110 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 0 10 0 0 1 2 3 V 5 0 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 150 A 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 75 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 75 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 14 600 V 800 V 10 1 12 Ciss 10 8 10 0 6 Coss 4 Crss 2 0 0 100 200 300 400 nC 10 -1 0 550 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-20-1997 BSM 75 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 15 par.: VCE = 600V, IC = 75 A 10 4 10 4 ns ns t t 10 3 tdoff 10 3 tdoff tr tdon tr 10 2 10 2 tf tf tdon 10 1 0 20 40 60 80 100 120 140 A 10 1 0 180 10 20 30 40 50 60 IC 80 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 15 par.: VCE = 600V, VGE = 15 V, IC = 75 A 40 40 Eon mWs mWs E E 30 30 25 25 20 20 Eoff 15 Eon 15 Eoff 10 10 5 5 0 0 20 40 60 80 100 120 140 A 180 IC 0 0 10 20 30 40 50 60 80 RG 7 Oct-20-1997 BSM 75 GD 120 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 150 A K/W 130 IF Diode 120 ZthJC 110 10 -1 100 90 Tj=125C 80 Tj=25C 10 -2 70 D = 0.50 60 0.20 0.10 50 10 -3 40 0.05 single pulse 0.02 30 0.01 20 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 75 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g 9 Oct-20-1997