Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1000MP
0.6 Watts, 18 Volts
1150 MHz
GENERAL DESCRIPTION
The 1000MP is a COMMON EMITTER transistor capable of providing 0.6
Watt of Class A, RF output power to 1150 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold metalization
and diffused ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55FW
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @ 25°C 5.3 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 45 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 300 mA
Maximum Temperatures
Storage Tempera ture -40 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F = 1150 MHz 0.6 W
Pin Power Input Vcc = 18 Volts 0.05 W
Pg Power Gain 10.8 dB
Ft Transition Fre quency 3.7 GHz
VSWR Load Mismatch Tolerance
10:1
FUNCTIONAL CHARAC TERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 1 mA 3.5 V
BVcbo Collector to Base Breakdown Ic = 1 mA 40 V
Ices Collector to Emitter Leakage Vce=28V 1 mA
hFE DC – Current Gain Vce = 5V, Ic = 100 mA 15
Cob Capacitance Vcb = 28V, f =1 MHz 2.0 3.0 pF
θjc1 Thermal Resistance 33 °C/W
Note 1: At rated output power
Rev A: Updated June 2009
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1000MP CASE DRAWING:
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1000MP TEST CIRCUIT:
