© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/14/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120E30CC, 1200 V, 30 A, TO-247-3L
RoHS
LSIC2SD120E30CC
Features
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Repetitive Peak Reverse Voltage VRRM -1200 V
DC Blocking Voltage VRTJ = 25 °C 1200 V
Continuous Forward Current
(Per Leg/Component) IF
TC = 25 °C 44/88
A
TC = 135 °C 21/42
TC = 152°C 15/30
Non-Repetitive Forward Surge Current
(Per Leg) IFSM TC = 25 °C, TP = 10 ms, Half sine pulse 120 A
Power Dissipation
(Per Leg/Component) PTot
TC = 25 °C 214/428 W
TC = 110 °C 93/186
Operating Junction Temperature TJ--55 to 175 °C
Storage Temperature TSTG --55 to 150 °C
Soldering Temperature Tsold -260 °C
Description
This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability,
and a maximum operating junction temperature of 175 °C.
This diode series is ideal for applications where improve-
ments in efficiency, reliability, and thermal management are
desired.
Circuit Diagram TO-247-3L
Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
• Solar inverters
• Industrial motor drives
• EV charging stations
Pb
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo =
Pb-free lead plating
Environmental
RoHS
Pb
PIN 1
PIN 2
PIN 3
CASE
123
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/14/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120E30CC, 1200 V, 30 A, TO-247-3L
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Forward Voltage VF
IF = 15 A, TJ = 25 °C -1. 5 1. 8 V
IF = 15 A, TJ = 175 °C - 2.2 -
Reverse Current IR
VR = 1200 V , TJ = 25 °C - <1 100 μA
VR = 1200 V , TJ = 175 °C -10
Total Capacitance C
VR = 1 V, f =1 MHz - 920 -
pF
VR = 400 V, f = 1 MHz - 88 -
VR = 800 V, f = 1 MHz - 64 -
Total Capacitive Charge QC VR = 800 V, -92 - nC
Electrical Characteristics (Per Leg)
Footnote: TJ = +25 °C unless otherwise specified
Thermal Characteristics
Characteristics Symbol Conditions
Value
Unit
Min. Typ. Max.
Thermal Resistance
(Per Leg/Component) RθJC -- 0.35 / 0.70 - °C/W
Q
c =
V
R
C(V)d
V
∫
0
Figure 2: Typical Reverse Characteristics (Per Leg)Figure 1: Typical Foward Characteristics (Per Leg)
0
5
10
15
20
25
30
-0.5 0.51.5 2.53.5 4.5
Forward Current (A)
Forward Voltage (V)
T
J
= 150 °C
°C
T
J
= 175
T
J
= 125°C
T
J
= 25 °C
T
J
= - 55 °C
1E-8
1E-7
1E-6
1E-5
1E-4
0200 400600 80010001200
Reverse Current, I
R
(A)
Reverse Voltage, V
R
(V)
T
J
= 175 °C
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/14/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120E30CC, 1200 V, 30 A, TO-247-3L
Figure 5: Capacitance vs. Reverse Voltage (Per Leg) Figure 6: Capacitive Charge vs. Reverse Voltage (Per Leg)
Figure 4: Current Derating (Per Leg)
Figure 3: Power Derating (Per Leg)
Case Temperature (°C )
0
50
100
150
200
250
25 50 75 100125 150175
Maximum Power (W)
Case Temperature (°C )
0
20
40
60
80
100
120
140
160
25 50 75 100125 150175
Forward Current (A)
10 % Duty
30 % Duty
50 % Duty
70 % Duty
DC
0
100
200
300
400
500
600
700
800
900
1000
110100 1000
Capacitance (pF)
Voltage (V)
0
20
40
60
80
100
120
0200 400600 8001000
Capacive Charge (nC)
Voltage (V)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/14/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120E30CC, 1200 V, 30 A, TO-247-3L
Figure 7: Stored Energy vs. Reverse Voltage (Per Leg) Figure 8: Transient Thermal Impedance (Per Component)
Package Dimensions TO-247-3L
R0.93
5.44 5.44
2.46
Recommended Hole Pattern Layout
UNIT: mm
E
E1
A
A2
D2D1
ØP
ØP1
E2/2
E2
Q
S
c
A1
DL
L1
b2 (2x)
eb4
b (3x)
e
OPTIONAL
Notes:
1. Dimensions are in millimeters
2. Dimension D, E do not include mold flash. Mold flash
shall not exceed 0.127 mm per side. These measured
at the outermost extreme of plastic body.
3.øP to have a maximum draft angle of 1.5° to the top
of the part with a maximum hole diameter of 0.154”
Symbol Millimeters
Min Nom Max
A 4.80 5.03 5.20
A1 2.25 2.38 2.54
A2 1.85 1.98 2.11
b 0.99 - 1.40
b2 1.65 - 2.39
b4 2.59 - 3.43
c 0.38 0.64 0.89
D 20.80 20.96 21.34
D1 13.50 - -
D2 0.51 1. 19 1.35
e5.44 BSC
E 15.75 15.90 16.13
E1 13.06 14.02 14.15
E2 4.19 4.32 4.83
L 19.81 20.19 20.57
L1 3.81 4.19 4.45
øP3.55 3.61 3.66
øP1 7.06 7. 1 9 7.32
Q 5.49 5.61 6.20
S 6.05 6.17 6.30
0
5
10
15
20
25
30
35
0200 400600 8001000
Stored Energy (μJ)
Voltage (V)
1E-03
1E-02
1E-01
1E+00
1E-061E-05 1E-041E-03 1E-021E-01 1E+00
Normalized Transient Thermal Impedance
Pulse Width (s)
Single
0.01
0.02
0.05
0.1
0.3
0.5
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/14/18
GEN2 SiC Schottky Diode
SiC Schottky Diode
LSIC2SD120E30CC, 1200 V, 30 A, TO-247-3L
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC2SD120E30CC SIC2SD120E30CC Tube Tube (30pcs) 450
Part Numbering and Marking System
SIC
2
SD
E = TO-247-3L
YY
WW
E
ZZZZZZ-ZZ
120
CC
SIC2SD120E30CC
YYWWE
ZZZZZZ-ZZ
L
F
= SiC
= Schottky Diode
= Voltage Rating (1200 V)
= Gen2
= Current Rating (30 A)
= Week
= Special Code
= Lot Number
= Year
30
= Common Cathode
Packing Specification TO-247-3L
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NOTE:
1. All pin plug holes are considered critical dimension
2. Tolerance is to be ±0.010 unless otherwise specified
3. Dimension are in inches (and millimeters).
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