© 2007 IXYS All rights reserved 1 - 4
MWI 100-12 E8
MKI 100-12 E8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
IC25 = 165 A
VCES = 1200 V
VCE(sat) typ. = 2.0 V
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
MWI
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 165 A
IC80 TC = 80°C 115 A
ICM VGE = ±15 V; RG = 12 Ω; TVJ = 125°C 200 A
VCEK RBSOA; clamped inductive load; L = 100 µH VCES
tSC VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C 10 µs
SCSOA; non-repetitive
Ptot TC = 25°C 640 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V
TVJ = 125°C 2.3 V
VGE(th) IC = 4 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 1.4 mA
TVJ = 125°C 1.4 mA
IGES VCE = 0 V; VGE = ± 20 V 400 nA
td(on) 330 ns
tr15 ns
td(off) 750 ns
tf45 ns
Eon 12 mJ
Eoff 10 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 7.4 nF
QGon VCE = 600 V; VGE = 15 V; IC = 150 A 0.76 µC
RthJC (per IGBT) 0.19 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 12 Ω
MKI
19
15
9
10
11
12
13, 21
14, 20
1
2
3
4See outline drawing for pin arrangement
E72873
p h a s e - o u t
© 2007 IXYS All rights reserved 2 - 4
MWI 100-12 E8
MKI 100-12 E8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 0.95 V; R
0
= 14 m
Ω
Free Wheeling Diode (typ. at TJ = 125°C)
V
0
= 1.27V; R
0
= 4.3 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.389 J/K; R
th1
= 0.139 K/W
C
th2
= 2.154 J/K; R
th2
= 0.051 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.301 J/K; R
th1
= 0.24 K/W
C
th2
= 2.005 J/K; R
th2
= 0.062 K/W
Module
Symbol Conditions Maximum Ratings
TVJ operating -40...+125 °C
TJM +150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
MdMounting torque (M5) 3 - 6 Nm
Symbol Conditions Characteristic Values
min. typ. max.
Rpin-chip 1.8 mΩ
dSCreepage distance on surface 10 mm
dAStrike distance in air 10 mm
RthCH with heatsink compound 0.01 K/W
Weight 300 g
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 200 A
IF80 TC = 80°C 130 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 100 A; VGE = 0 V; TVJ = 25°C 2.3 2.6 V
TVJ = 125°C 1.7 V
IRM IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C 58 A
trr VR = 600 V; VGE = 0 V 190 ns
RthJC (per diode) 0.3 K/W
pins 5, 6, 7, 8 and 17 for MWI only
Dimensions in mm (1 mm = 0.0394")
p h a s e - o u t
© 2007 IXYS All rights reserved 3 - 4
MWI 100-12 E8
MKI 100-12 E8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
0 200 400 600 800 1000
0
30
60
90
0
50
100
150
200
250
300
012345
0
50
100
150
200
250
300
0 200 400 600 800 1000
0
5
10
15
20
012345
0
50
100
150
200
250
300
VCE
V
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE
IRM
trr
A/μs
MWI100-12E8
IRM
trr
A
9 V
11 V
A
5678910
0
50
100
150
200
250
300
V
VGE
A
IC
0123
0
50
100
150
200
250
300
V
VF
IF
A
ns
15 V
TVJ = 25°C
9 V
11 V
13 V
VGE = 17 V
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
VCE = 20 V
TVJ = 125°C
TVJ = 25°C
13 V
VGE = 17 V 15 V
TVJ = 125°C
VR = 600 V
IF = 120 A
VCE = 600 V
IC = 150 A
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics
of free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics
of free wheeling diode
p h a s e - o u t
© 2007 IXYS All rights reserved 4 - 4
MWI 100-12 E8
MKI 100-12 E8
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
0 50 100 150 200
0
10
20
30
40
0
100
200
300
400
0 50 100 150 200
0
4
8
12
16
20
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 5 10 15 20
0
4
8
12
16
0
250
500
750
1000
0 5 10 15 20
0
4
8
12
16
0
100
200
300
400
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
Eoff
td(off)
Eoff
td(off)
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
t
ns
t
ICM
K/W
ZthJC
V
A
mJ nsmJ
ns
tr
Eon
tr
single pulse
diode
IGBT
ns
Eon
MWI100-12E8
td(on)
tf
VCE = 600 V
VGE = ±15 V
IC = 100 A
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 100 A
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
RG = 12 Ω
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
RG = 12 Ω
TVJ = 125°C
RG = 12 Ω
TVJ = 125°C
td(on)
tf
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
p h a s e - o u t
