MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement MKI Features t IGBTs Conditions Maximum Ratings VCES TVJ = 25C to 150C u Symbol TC = 25C TC = 80C ICM VCEK VGE = 15 V; RG = 12 ; TVJ = 125C RBSOA; clamped inductive load; L = 100 H tSC VCE = 900 V; VGE = 15 V; RG = 12 ; TVJ = 125C SCSOA; non-repetitive Ptot TC = 25C Symbol Conditions VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; td(on) tr td(off) tf Eon Eoff 20 V 165 115 A A 200 VCES A 10 s 640 W Typical Applications Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. p h a s e IC25 IC80 IGES V -o VGES 1200 2.0 2.3 4.5 VGE = 0 V; TVJ = 25C TVJ = 125C 2.5 V V 6.5 V 1.4 mA mA 400 nA 1.4 VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 100 A VGE = 15 V; RG = 12 330 15 750 45 12 10 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 150 A 7.4 0.76 nF C RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved * NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits * HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current * Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate * MWI - AC drives - power supplies with power factor correction * MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger 0.19 K/W 20070912a 1-4 MWI 100-12 E8 MKI 100-12 E8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25C TC = 80C 200 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25C TVJ = 125C 2.3 1.7 IRM trr IF = 120 A; diF/dt = -750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V 58 190 RthJC (per diode) Conduction A A 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 14 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.27V; R0 = 4.3 m Thermal Response t Module Conditions Maximum Ratings TVJ TJM Tstg operating VISOL IISOL 1 mA; 50/60 Hz Md Mounting torque (M5) Symbol Conditions C C C 2500 V~ 3-6 Nm -o Creepage distance on surface Strike distance in air RthCH with heatsink compound 1.8 10 10 IGBT (typ.) Cth1 = 0.389 J/K; Rth1 = 0.139 K/W Cth2 = 2.154 J/K; Rth2 = 0.051 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W m mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") p h a dS dA s e Characteristic Values min. typ. max. Rpin-chip Weight -40...+125 +150 -40...+125 u Symbol pins 5, 6, 7, 8 and 17 for MWI only IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070912a 2-4 MWI 100-12 E8 MKI 100-12 E8 300 300 A 250 13 V VGE = 17 V A 15 V 250 11 V TVJ = 25C IC 13 V IC TVJ = 125C 200 200 150 150 100 11 V 100 9V 9V 50 50 0 0 0 1 2 3 4 V 0 5 1 2 3 VCE IF u 250 t 300 A 250 VCE = 20 V 200 150 150 TVJ = 125C -o 200 100 100 TVJ = 125C e 50 TVJ = 25C 0 6 7 8 9 VGE V 50 TVJ = 25C 0 0 10 s 5 a 15 VGE 2 3 V Fig. 4 Typ. forward characteristics of free wheeling diode h VCE = 600 V IC = 150 A p 20 1 VF Fig. 3 Typ. transfer characteristics V 5 Fig. 2 Typ. output characteristics 300 A V 4 VCE Fig. 1 Typ. output characteristics IC 15 V VGE = 17 V 90 300 A 250 60 200 ns IRM trr trr 150 10 TVJ = 125C VR = 600 V IF = 120 A 30 5 100 50 IRM MWI100-12E8 0 0 0 200 400 600 800 nC 1000 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 0 200 400 600 800 A/s 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 20070912a 3-4 MWI 100-12 E8 MKI 100-12 E8 40 mJ Eon 400 20 ns mJ ns 16 800 td(on) 30 300 200 100 Eon 4 0 0 50 100 A 150 400 200 Eoff tr 0 600 RG = 12 TVJ = 125C 8 10 t VCE = 600 V VGE = 15 V 12 RG = 12 TVJ = 125C 20 td(off) Eoff t VCE = 600 V VGE = 15 V 1000 tf 0 200 0 50 100 A 150 IC 0 200 IC Fig. 7 Typ. turn on energy and switching times versus collector current 16 400 ns td(on) Eon 12 300 mJ td(off) Eoff 12 u mJ t 16 Fig. 8 Typ. turn off energy and switching times versus collector current t 1000 ns 750 t 200 VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C Eon 4 100 tr 0 5 10 4 15 0 0 20 15 1 diode K/W p ICM 10 Fig.10 Typ. turn off energy and switching times versus gate resistor h A 200 5 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 250 250 0 0 20 a RG 500 VCE = 600 V VGE = 15 V IC = 100 A TVJ = 125C tf s 0 8 e 8 -o Eoff IGBT 0.1 ZthJC 150 0.01 100 RG = 12 TVJ = 125C 50 0 0 200 400 single pulse 0.001 600 800 1000 1200 1400 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 0.0001 0.0001 MWI100-12E8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 20070912a 4-4