© 2011 IXYS All rights reserved 1 - 3
20110725b
CS 45
IXYS reserves the right to change limits, test conditions and dimensions.
VRRM = 800-1600 V
IT(RMS) = 75 A
IT(AV)M = 48 A
Phase Control Thyristor
Features
• Thyristor for line frequency
• International standard package
JEDEC TO-247
• Planar passivated chip
• Long-term stability of blocking
currents and voltages
• Version AR isolated and
UL registered E153432
• Epoxy meets UL 94V-0
Applications
• Motor control
• Power converter
• AC power controller
• Switch-mode and resonant mode
power supplies
• Light and temperature control
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space and weight savings
• Simple mounting
• Improved temperature and power
cycling
Symbol Conditions Maximum Ratings
ITRMS
IT(AV)M
TVJ = TVJM
TC = 75°C, 180° sine
75
48
A
A
ITSM TVJ = 45°C t = 10 ms (50 Hz), sine
VR = 0 V t = 8.3 ms (60 Hz), sine
520
560
A
A
TVJ = TVJM t = 10 ms (50 Hz), sine
VR = 0 t = 8.3 ms (60 Hz), sine
460
500
A
A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine
VR = 0 V t = 8.3 ms (60 Hz), sine
1350
1300
A2s
A2s
TVJ = TVJM t = 10 ms (50 Hz), sine
VR = 0 V t = 8.3 ms (60 Hz), sine
1050
1030
A2s
A2s
(di/dt)cr TVJ = TVJM
f = 50 Hz; tp = 200 µs
repetitive, IT = 40 A 150 A/µs
VD = 2/3 VDRM
IG = 0.3 A
diG /dt = 0.3 A/µs
non repetitive, IT = IT(AV)M 500 A/µs
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
1000 V/µs
PGM
PGAV
TVJ = TVJM; tp = 30 µs
IT = IT(AV)M; tp = 300 µs
10
5
0.5
W
W
W
VRGM 10 V
TVJ
TVJM
Tstg
-40 ... +140
140
-40 ... 125
°C
°C
°C
MdVersion io1: mounting torque M3 0.8...1.2 Nm
FCVersion io1R: mounting force with clip 20...120 N
VISOL *50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
Weight typ. 6 g
* Version io1R only Data according to IEC 60747
VRSM
VDSM
V
VRRM
VDRM
V Type
900 800 CS 45-08 io1
1300 1200 CS 45-12 io1
1700 1600 CS 45-16 io1 CS 45-16 io1R
A
G
C
ISOPLUS247TM
Version io1R
A = Anode, C = Cathode, G = Gate
C
A
TO-247 AD
Version io1
G
C
AG
hh
A (TAB) Isolated
back surface
© 2011 IXYS All rights reserved 2 - 3
20110725b
CS 45
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
min. max.
IR, IDVR = VRRM; VD = VDRM; TVJ = TVJM 5 mA
VTIT = 80 A; TVJ = 25°C 1.64 V
VTO
rT
For power-loss calculations only
TVJ = 125°C
0.85
11
V
mW
VGT
IGT
VD = 6 V; TVJ = 25°C
TVJ = -40°C
VD = 6 V; TVJ = 25°C
TVJ = -40°C
1.5
1.6
100
200
V
V
mA
mA
VGD
IGD
VD = 2/3 VDRM; TVJ = TVJM 0.2
10
V
mA
ILtp = 10 µs; TVJ = 25°C
IG = 0.3 A; diG /dt = 0.3 A/µs
150 mA
IHVD = 6 V; RGK = ∞; TVJ = 25°C 100 mA
tgd VD = ½ VDRM; TVJ = 25°C
IG = 0.3 A; diG/dt = 0.3 A/µs
2 µs
RthJC
RthJH
DC current
DC current
0.62
0.82
K/W
K/W
aMax. acceleration; 50 Hz 50 m/s2
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
TO-247 AD
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 5.45 BSC 0.215 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim.
Millimeter
Inches
ISOPLUS 247TM
E
12 3
R
DL
L1
Q
3x b
2x b2
b4
W
A
A2
c
A1
2x e
E1
D1
D2
D3
10 100 1000
1
10
100
1000
μs
tgd
IG
1 10 100 1000 10000
0.1
1
10
IG
VG
mA
V
4
2
15
6
mA
typ. Limit
3
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
Dim. Millimeter Inches
min max min max
A 4.70 5.30 0.185 0.209
A1 2.21 2.59 0.087 0.102
A2 1.50 2.49 0.059 0.098
b 0.99 1.40 0.039 0.055
b2 1.65 2.39 0.065 0.094
b4 2.59 3.43 0.102 0.135
c 0.38 0.89 0.015 0.035
D 20.79 21.45 0.819 0.845
D1 13.07 - 0.515 -
D2 0.51 1.35 0.020 0.053
E 15.48 16.24 0.610 0.640
E1 13.45 - 0.53 -
E2 4.31 5.48 1.170 0.216
e 5.46 BSC 0.2150 BSC
L 19.80 20.30 0.078 0.800
L1 - 4.49 - 0.177
Ø P 3.55 3.65 0.140 0.144
ØP1 - 7.39 - 0.290
Q 5.38 6.19 0.212 0.244
S 6.14 BSC 0.242 BSC
© 2011 IXYS All rights reserved 3 - 3
20110725b
CS 45
IXYS reserves the right to change limits, test conditions and dimensions.
0 20 40 60 80 100 120 140
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60 70
0
20
40
60
80
100
120
140
0 25 50 75 100 125 150
0.001 0.01 0.1 1
0
100
200
300
400
0.0 0.5 1.0 1.5 2.0
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100
0.0
0.5
1.0
IT
[A]
t [s]
VT [V]
1 2 3 4 5 6 7 8 910
1000
I2t
[A2s]
t [ms]
500
2000
ITSM
[A]
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
TVJ = 45°C
50 Hz, 80% VRRM
TVJ = 125°C
TVJ = 45°C
VR = 0 V
PT
[W]
IT(AV)M [A] Tamb [°C]
IT(AV)M
[A]
Tcase [°C]
DC
180° sin
120° rect
60° rect
30° rect
RthKA [K/W]
0.1
0.5
1
2
4
10
DC
180° sin
120° rect
60° rect
30° rect
ZthJC
[K/W]
t [s]
30°
60°
120°
180°
DC
Fig. 3 Forward characteristics Fig. 4 Surge overload current
ITSM: crest value, t: duration
Fig. 5 I2t versus time (1-10 s)
Fig. 6 Power dissipation versus forward current and ambient temperature Fig. 7 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.62
180° 0.71
120° 0.748
60° 0.793
30° 0.817
Constants for ZthJC calculation:
i Rthi (K/W) ti (s)
1 0.206 0.013
2 0.362 0.118
3 0.052 1.488
