GEN2 SiC Schottky Diode LSIC2SD120D20, 1200 V, 20 A, TO-263-2L LSIC2SD120D20 RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and Schottky Diodeoperating junction temperature of 175 C. This a maximum diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features * P ositive temperature coefficient for safe operation and ease of paralleling * 1 75 C maximum operating junction temperature * E xtremely fast, temperature-independent switching behavior * D ramatically reduced switching losses compared to Si bipolar diodes * Excellent surge capability Circuit Diagram TO-263-2L Applications Case Case * B oost diodes in PFC or DC/DC stages * S witch-mode power supplies 1 * Solar inverters * Industrial motor drives * EV charging stations * U ninterruptible power supplies 2 1 2 Environmental * L ittelfuse "RoHS" logo = RoHS conform RoHS * L ittelfuse "HF" logo = Halogen Free * L ittelfuse "Pb-free" logo = Pb Pb-free lead plating Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Symbol Conditions Value Unit VRRM - 1200 V V VR IF Non-Repetitive Forward Surge Current IFSM Power Dissipation PTot Operating Junction Temperature TJ = 25 C 1200 TC = 25 C 54.5 TC = 135 C 26.0 TC = 150 C 20.0 TC = 25 C, TP = 10 ms, Half sine pulse 140 A A TC = 25 C 250 TC = 110 C 108 TJ - -55 to 175 C Storage Temperature TSTG - -55 to 150 C Soldering Temperature (reflow MSL1) Tsold - 260 C W (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/28/18 GEN2 SiC Schottky Diode LSIC2SD120D20, 1200 V, 20 A, TO-263-2L Electrical Characteristics Characteristics SiCConditions Schottky Diode Symbol Forward Voltage VF Reverse Current IR Total Capacitance C Value Min. Typ. Max. IF = 20 A, TJ = 25 C - 1.5 1.8 IF = 20 A, TJ = 175 C - 2.2 - VR = 1200 V , TJ = 25 C - <1 100 VR = 1200 V , TJ = 175 C - 15 VR = 1 V, f =1 MHz - 1142 - VR = 400 V, f = 1 MHz - 108 - VR = 800 V, f = 1 MHz - 82 - - 115 - Unit V A pF VR Total Capacitive Charge C(V)dV QC VR = 800 V, Qc = nC 0 Footnote: TJ = +25 C unless otherwise specified Thermal Characteristics Value Characteristics Thermal Resistance Symbol Conditions RJC - Figure 1: Typical Foward Characteristics 25 Max. - 0.6 - TJ = - 55 C TJ = 25 C TJ = 125 C TJ = 150 C TJ = 175 C 20 15 10 5 C/W 1E-5 TJ = 175 C 1E-6 TJ = 150 C 1E-7 0 -0.5 Unit 1E-4 Reverse Current, IR (A) Forward Current (A) 30 Typ. Figure 2: Typical Reverse Characteristics 40 35 Min. 0.5 1.5 2.5 Forward Voltage (V) 3.5 TJ = 125 C 4.5 1E-8 0 20 0 40 0 60 0 TJ = 25 C 80 0 10 00 12 00 Reverse Voltage, V R (V) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/28/18 GEN2 SiC Schottky Diode LSIC2SD120D20, 1200 V, 20 A, TO-263-2L Figure 3: Power Derating Figure 4: Current Derating SiC Schottky Diode 300 200 120 DC 160 Forward Current (A) Maximum Power (W) 140 10 % Duty 30 % Duty 50 % Duty 70 % Duty 180 250 200 150 100 100 80 60 40 20 50 0 25 0 25 50 75 100 125 150 50 175 75 100 125 150 175 Case Temperature (C ) Case Temperature (C ) Figure 6: Capacitive Charge vs. Reverse Voltage 1200 140 1000 120 Capacive Charge (nC) Capacitance (pF) Figure 5: C apacitance vs. Reverse Voltage 800 600 400 200 100 80 60 40 20 0 1 10 100 Voltage (V) 1000 0 0 200 400 600 800 1000 Voltage (V) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/28/18 GEN2 SiC Schottky Diode LSIC2SD120D20, 1200 V, 20 A, TO-263-2L Figure 7: Stored Energy vs. Reverse Voltage Figure 8: Transient Thermal Impedance SiC Schottky Diode 45 40 35 Stored Energy (J) 30 25 20 15 10 5 0 0 200 400 Voltage (V) 600 800 1000 Normalized Transient Thermal Impedance 1E+00 0.5 0.3 1E-01 0.1 0.05 0.02 0.01 1E-02 1E-03 1E-06 Single 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse Width (s) Dimensions-Package TO-263-2L Symbol Millimeters Min Nom Max A 4.30 4.50 4.70 A1 0.00 - 0.25 b 0.70 0.80 0.90 b1 1.17 1.27 1.37 0.60 c 0.46 0.50 c1 1.25 1.30 1.40 D 9.00 9.20 9.40 D1 6.50 6.70 6.90 E 9.80 10.00 10.20 E1 7.80 8.00 8.20 E2 9.70 9.90 10.10 e 5.08 BSC H 15.00 15.30 15.60 L 2.00 2.30 2.60 L1 1.00 1.20 1.40 L2 0.254 BSC (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/28/18 GEN2 SiC Schottky Diode LSIC2SD120D20, 1200 V, 20 A, TO-263-2L Part Numbering and Marking System SIC2SD120D20 LF YYWWF ZZZZZZ-ZZ Packing Option SIC = SiC Diode 2 = Gen2 SD = Schottky Diode 120 = Voltage Rating (1200 V) D = TO-263 Package (2 Lead) 20 = Current Rating (20 A) YY = Year WW = Week F = Special Code ZZZZZZ-ZZ = Lot Number Number SiC SchottkyPart Diode LSIC2SD120D20 Marking Packing Mode M.O.Q SIC2SD120D20 Tape and Reel 800 XXU\*WUX ZU^*WUX XU\*WUX {GGG*WUY X\U*WUX XWU^*WUX thGX^UY\ [UW*WUX XWGG Y[UW*WUZ YUW*WUX RWUX GXU\ TWUX XU^\*WUX TO-263 Carrier Reel Specifications ZU*WUX yWU\ XWU]*WUX XU\*WUX [U*WUX XU\*WUX WU^XUW X]UW*WUX ua XUGth{lyphsGaGwzOw Gz P YUGlzkOlGkPGjvu{yvsGaGslzzG{ohuG*GXWW} ZUGz|ymhjlGylzpz{hujlGaGslzzG{ohuGXW ^V [UG|GaGtGOP Y[U[ RYVTW wz ] WU X* YU \ GZZW*Z XWWG{w XZ {w XY {w lslj{yvupj zluzp{p}l kl}pjlz kvGuv{GvwluGvyGohuksl ljlw{Gh{h z{h{pjTmyllG~vyrz{h{pvu Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, Components intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/28/18