PUMH9,135 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Sep 15

2004 Apr 14

DISCRETE SEMICONDUCTORS

PIMH9; PUMH9; PEMH9

NPN/NPN resistor-equipped

transistors; R1 = 10 kΩ, R2 = 47 kΩ

2004 Apr 14 2

NXP Semiconductors Product data sheet

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩ

PIMH9; PUMH9;

PEMH9

FEATURES

•Built-in bias resistors

•Simplifies circuit design

•Reduces compo ne nt count

•Reduces pick and place costs.

APPLICATIONS

•General purpose switc hing and amplification

•Inverter and interface c ir cu i ts

•Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN/NPN resistor-equipped transistor (see “Simplified

outline, symbol and pinning” for package details).

SYMBOL PARAMETER TYP. MAX. UNIT

VCEO collector-emitter

voltage −50 V

IOoutput curr en t (DC) −100 mA

TR1 NPN − − −

TR2 NPN − − −

R1 bias resistor 10 −kΩ

R2 bias resistor 47 −kΩ

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER PACKAGE MARKING CODE PNP/PNP

COMPLEMENT NPN/PNP

COMPLEMENT

PHILIPS EIAJ

PEMH9 SOT666 −H9 PEMB9 PEMD9

PIMH9 SOT457 SC-74 H9 − −

PUMH9 SOT363 SC-88 H*9(1) PUMB9 PUMD9

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING

PIN DESCRIPTION

PEMH9 1 emitter TR1

PIMH9 2base TR1

PUMH9 3collector TR2

4emitter TR2

5base TR2

6collectorTR1

handbook, halfpage

MHC049

123

46 5

Top view

654

123

TR1 TR2

R1 R2

2004 Apr 14 3

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted o n an FR4 printed-circuit board, single-sided copper, stand ard footprint.

2. Reflow soldering is the only recommended soldering method.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PEMH9 −plastic surface mounted package; 6 leads SOT666

PIMH9 −plastic surface mounted package; 6 leads SOT457

PUMH9 −plastic surface mounted package; 6 leads SOT363

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −50 V

VEBO emitter-base voltage open collector −10 V

Viinput voltage

positive −+40 V

negative − −10 V

IOoutput current −100 mA

ICM peak collector current −100 mA

Ptot total power dissipation Tamb ≤ 25 °C

SOT363 note 1 −200 mW

SOT457 note 1 −300 mW

SOT666 notes 1 and 2 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C

SOT363 note 1 −300 mW

SOT457 note 1 −600 mW

SOT666 notes 1 and 2 −300 mW

2004 Apr 14 4

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board, single-sided copper, stand ard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per transistor

Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C

SOT363 note 1 625 K/W

SOT457 note 1 417 K/W

SOT666 notes 1 and 2625 K/W

Per device

Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C

SOT363 note 1 416 K/W

SOT457 note 1 208 K/W

SOT666 notes 1 and 2416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-of f current VCB = 50 V; IE = 0 A −−100 nA

ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A −−1μA

VCE = 30 V; IB = 0 A; Tj = 150 °C−−50 μA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−150 μA

hFE DC current gain VCE = 5 V; IC = 5 mA 100 − −

VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA −−100 mV

Vi(off) input-off voltage VCE = 5 V; IC = 100 μA−0.7 0.5 V

Vi(on) input-on voltage VCE = 0.3 V; IC = 1 mA 1.4 0.8 −V

R1 input resistor 710 13 kΩ

resistor ratio 3.7 4.7 5.7

Cccollector capacitance VCB = 10 V; IE = ie = 0 A;

f = 1 MHz −−2.5 pF

--------

2004 Apr 14 5

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

PACKAGE OUTLINES

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-08

06-03-16

IEC JEDEC JEITA

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface-mounted package; 6 leads SOT66

wMA

2004 Apr 14 6

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT457 SC-74

pin 1

index A

detail X

scale

132

0 1 2 mm

Plastic surface-mounted package (TSOP6); 6 leads SOT45

UNIT A1bpcDEHELpQywv

mm 0.1

0.013 0.40

0.25 3.1

2.7

0.26

0.10 1.7

1.3

0.95 3.0

2.5 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2 0.33

0.23

1.1

0.9

05-11-07

06-03-16

2004 Apr 14 7

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT36

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

2004 Apr 14 8

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩPIMH9; PUMH9; PEMH9

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/ 04/pp9 Date of release: 2004 Apr 14 Document order number: 9397 750 13091