SEMiX453GD12Vc
© by SEMIKRON Rev. 2 – 16.02.2011 1
SEMiX® 33c
GD
SEMiX453GD12Vc
Features
• Homogeneous Si
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5
RGoff,main = 0,5
RG,X = 2,2
RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 673 A
Tc=80°C 513 A
ICnom 450 A
ICRM ICRM = 3xICnom 1350 A
VGES -20 ... 20 V
tpsc
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 516 A
Tc=80°C 385 A
IFnom 450 A
IFRM IFRM = 3xIFnom 1350 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 2430 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=450A
VGE =15V
chiplevel
Tj=25°C 1.75 2.2 V
Tj=150°C 2.2 2.5 V
VCE0 Tj=25°C 0.94 1.04 V
Tj=150°C 0.88 0.98 V
rCE VGE =15V Tj=25°C 1.8 2.6 m
Tj=150°C 2.9 3.4 m
VGE(th) VGE=VCE, IC= 18 mA 5.5 6 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 27.0 nF
Coes f=1MHz 2.66 nF
Cres f=1MHz 2.65 nF
QGVGE = - 8 V...+ 15 V 4950 nC
RGint Tj=25°C 1.67
td(on) VCC = 600 V
IC=450A
VGE =±15V
RG on =1.4
RG off =1.4
di/dton = 6400 A/µs
di/dtoff =4000A/µs
du/dtoff = 6600 V/
µs
Tj=150°C 470 ns
trTj=150°C 72 ns
Eon Tj=150°C 39.8 mJ
td(off) Tj=150°C 665 ns
tfTj=150°C 109 ns
Eoff Tj=150°C 54.4 mJ
Rth(j-c) per IGBT 0.067 K/W