SIEMENS IGBT Power Module - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate Type Vce lle Package Ordering Code BSM 15 GD 120 DN2 1200V |}25A {|ECONOPACK 2 C67076-A2504-A67 BSM 15 GD120DN2E3224 |1200V|25A |ECONOPACK 2K C67070-A2504-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Voce 1200 Vv Collector-gate voltage Vcocr Ree = 20 kQ 1200 Gate-emitter voltage Voge + 20 DC collector current Io A To = 25C 25 Tc = 80C 15 Pulsed collector current, t, = 1 ms ICpuls To = 25C 50 Tc = 80C 30 Power dissipation per IGBT Prot W To = 25C 145 Chip temperature T; + 150 C Storage temperature T stg -55 ... + 150 Thermal resistance, chip case Rihuc < 0.86 K/W Diode thermal resistance, chip case Rihucp 1.5 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Semiconductor Group Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage Va@e(th) V Vee = Voce, Ic = 0.6 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VcE(sat) Vee = 15 V, lo =15A, Tj = 25C - 2.5 3 Vee = 15 V, Ilo = 15A, 7) = 125C - 3.1 3.7 Zero gate voltage collector current IcEs mA Voge = 1200 V, Veg = OV, Tj = 25 C - 0.3 0.5 Vee = 1200 V, Vee = OV, Tj = 125 C - 1.2 - Gate-emitter leakage current IGEs nA Voce = 20V, Vee = OV - - 150 AC Characteristics Transconductance Os S Voce =20V, Ic =15A 5.5 - - Input capacitance Ciss pF Voe = 25 V, Vee = OV, f= 1 MHz - 1000 - Output capacitance Coss Voe = 25 V, Vee = OV, f= 1 MHz - 150 - Reverse transfer capacitance Crss Voce = 25 V, Vee = 0 V, f= 1 MHz - 70 - Semiconductor Group 2 Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max, Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Vec = 600 V, Veg = 15 V, le = 15A Reon = 82 Q td(on) 55 110 ns Rise time Voc = 600 V, Vee =15 V, lo= 15A Reon = 82 45 90 Turn-off delay time Voc = 600 V, VGeE =-15 V, Io =15A Reott =820 400 600 Fall time Voc = 600 V, Voce = -15V, Io =15A Reott = 82 Q 70 100 Free-Wheel Diode Diode forward voltage Ip=15A, Vee = OV, 7) = 25C lp=15A, Vee = OV, 7) = 125C 2.4 1.9 2.9 Reverse recovery time le = 15 A, Vq = -600 V, Veg = OV di-/dt = -800 Ajs, T) = 125 C 0.1 Us Reverse recovery charge fF =15A, Vq = -600 V, Veg = OV di/dt = -800 A/us T= 25C T) = 125 C pC Semiconductor Group Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Power dissipation Prot = f(T) parameter: T < 150 C 150 Ww Pur 120 110 t 90 80 70 60 50 30 20 10 0 20 40 60 80 Collector current lo = fi (Tc) 100 120 C Ty parameter: Vap 215 V, 7; $150 C 26 A 22 fc 20 18 16 14 12 10 o on tf 0 20 40 60 80 Semiconductor Group 100 120 C Te 160 160 Safe operating area Io = f(Vce) parameter: D = 0, To = 25C , T, 150 C 102 10 10-1 10 10 10 10 Vv Voce Transient thermal impedance IGBT 2th JC ~ fi (tp) parameter: D = ty / T 10 K/wW Zensc 10 10 2 10-3 10 Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Typ. output characteristics Typ. output characteristics Io =f (Voge) Io =f (Veg) parameter: , = 80 us, 7) = 25 C parameter: f, = 80 us, 7) = 125 C 30 30 A A Ig 24 le 24 22 22 20 20 18 18 16 16 14 14 12 12 on f& OD on & DMD @ w Vee Typ. transfer characteristics Ic =f (Vee) parameter: tp = 80 Us, Vog = 20V 30 A Il, 24 22 t 2 18 16 14 12 10 o~p fk Semiconductor Group 5 Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Typ. gate charge Typ. capacitances Vee = (Qcate) C =f (Vce) parameter: Ic puis = 15 A parameter: Voge = OV, f = 1 MHz 20 101 Vv nF Vee 16 c 14 10 12 10 8 10-1 6 4 2 0 102 0 10 20 30 40 50 60 70 80 nC 100 0 5 10 15 2 2 3 V 40 Qeate _ Vor Reverse biased safe operating area Short circuit safe operating area Icputs f(Voee) , Ty= 150C lose = f(Vog) , T; = 150C parameter: Voge = 15 V parameter: Voge = + 15 V, tgp < 10 us, L< 50 nH 2.5 12 Iopuslle losdle |: 1.5 6 1.0 4 0.5 2 0.0 0 0 200 400 600 800 1000 1200 v_ 1600 0 200 400 600 800 1000 1200 Vv 1600 _ Vor ot Vor Semiconductor Group 6 Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Typ. switching time 1 =f (Io), inductive load , iF = 125C Par.: Voce =600V, Vee =+15V, Re =82Q 103 ns 102 101 0 5 10 15 2 2 3 A Typ. switching losses E =f (Ig), inductive load , Tj = 125C par.: Voge = 600 V, Vor =415V,ARg = 820 10 mWs , / Eon V4 Bott Semiconductor Group Typ. switching time t=f (Rg), inductive load , Tj = 125C Ppar.: Voge = 600 V, Voce =+15V, Ic =15A 108 tdoft ns 102 101 Typ. switching losses E =f (Re), inductive load, Tj = 125C par.: Vogp = GOOV, Veg = 4 15 V IC =15A 10 mWs E 4 on 3 2 ao _ Eoff _ Lae cae 1 0 0 50 10 15 20 g 30 oo Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Diode reverse diode / = f(Vf) Zth uc = S(tp) parameter: 7; parameter: D = th/T 30 101 A KW le 24 Zio "0 22 : | 18 10-1 16 T125C 14 42 102 10 8 6 103 4 2 0 10-4 00 O05 10 15 20 Vv 30 10 Semiconductor Group 8 Mar-27-1996SIEMENS BSM 15 GD 120 DN2 Circuit Diagram sf 15 100~e-o 14 iol lo 31809049 Package Outlines Dimensions in mm Weight: 180 g S faa TELL Hy efi ee | 104.8 | x 0 80 4x15.24= 60.96 16 {15.24 45.5 max. _ NN eo 1.15x0.8 3.81 11.43 5x11.43=57.15 93 107.5 max. GM175569 Semiconductor Group 9 Mar-27-1996