© 2012 IXYS All rights reserved 1 - 4
MDO 500
IXYS reserves the right to change limits, test conditions and dimensions. 20121206a
IFRMS = 880 A
IFAVM = 560 A
VRRM = 1200-2200 V
High Power
Diode Modules
Features
• International standard package
• Direct Copper Bonded Al2O3-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature and power
cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
IFRMS
IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
880
560
A
A
IFSM TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
15000
16000
A
A
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
13000
14400
A
A
I2tTVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
1125000
1062000
A2s
A2s
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
845000
813000
A2s
A2s
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
3000
3600
V~
V~
MdMounting torque (M6)
Terminal connection torque (M8)
4.5 - 7
11 - 13
Nm
Nm
Weight Typical including screws 650 g
VRSM VRRM Type
V V
1300 1200 MDO 500-12N1
1500 1400 MDO 500-14N1
1700 1600 MDO 500-16N1
1900 1800 MDO 500-18N1
2100 2000 MDO 500-20N1
2300 2200 MDO 500-22N1
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
3 2
E72873
Symbol Conditions Characteristic Values
typ. max.
IRRM VR = VRRM TVJ = TVJM 30 mA
VFIT = 1200 A TVJ = 25°C 1.3 V
VT0
rt
For power-loss calculations only
TVJ = TVJM
0.8
0.38
V
mW
RthJC
RthJK
DC current
DC current
0.072
0.096
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
21.7
9.6
50
mm
mm
m/s2
© 2012 IXYS All rights reserved 2 - 4
MDO 500
IXYS reserves the right to change limits, test conditions and dimensions. 20121206a
1
2 3
6.2
80
92
22.5 35 28.5
38
50
4 5 6 7
43
49
M8 x20
52
+0
-1,4
Dimensions in mm (1 mm = 0.0394")
© 2012 IXYS All rights reserved 3 - 4
MDO 500
IXYS reserves the right to change limits, test conditions and dimensions. 20121206a
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
12000
14000
0 200 400 600 800
0
200
400
600
800
1000
1200
1 10
105
106
107
0 25 50 75 100 125 150
I2t
A2s
TC [°C]t [s]
0 25 50 75 100 125 150
0
200
400
600
800
1000
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 140°C
Ptot
[W]
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
ITSM
[A]
0 300 600 900 1200
0
400
800
1200
1600
2000
2400
2800
3200
0 25 50 75 100 125 150
4xMDO500
Circuit
B2
RthKA K/W
0.015
0.03
0.04
0.05
0.07
0.01
0.14
R L
t [ms]
TVJ = 45°C
TVJ = 140°C
IFAVM
[A]
IFAVM [A] TA [°C]
TA [°C]IdAVM [A]
Ptot
[W]
VF [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
200
400
600
800
1000
1200
1400
1600
IF
[A]
TVJ = 25°C
TVJ = 125°C
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current
IF versus VF
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature. R = resistive load, L = inductive load
© 2012 IXYS All rights reserved 4 - 4
MDO 500
IXYS reserves the right to change limits, test conditions and dimensions. 20121206a
0 300 600 900 1200 1500
0
1000
2000
3000
4000
5000
t [s]
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
ZthJC
[K/W]
0 25 50 75 100 125 150
6xMDO500
Circuit
B6
10-3 10-2 10-1 100101102
0.00
0.02
0.04
0.06
0.08
0.10
0.12
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
RthKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
TA [°C]IdAVM [A]
Ptot
[W]
ZthJK
[K/W]
t [s]
Fig. 6 Three phase rectifier bridge: Power dissipation
versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to case
Fig. 8 Transient thermal impedance junction to heatsink
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.072
180° 0.0768
120° 0.081
60° 0.092
30° 0.111
Constants for ZthJC calculation:
i Rthi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.096
180° 0.1
120° 0.105
60° 0.116
30° 0.135
Constants for ZthJK calculation:
i Rthi (K/W) ti (s)
1 0.0035 0.0054
2 0.0186 0.098
3 0.0432 0.54
4 0.0067 12
5 0.024 12
