1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
nTypical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA:
uAverage output power = 20 W
uPower gain = 16 dB
uDrain efficiency = 22.5 %
uACPR885k = −52.0 dBc in 30 kHz bandwidth
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (2500 MHz to 2700 MHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nRF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008 Product data sheet
Table 1. Typical performance
Typical RF performance at T
case
=25
°
C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) PL(p) GpηDACPR885k ACPR1980k
(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)
1-carrier N-CDMA[1] 2500 to 2700 32 20 200 16 22.5 −52[2] −67[2]
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 2 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G27-135 (SOT502A)
1 drain
2 gate
3 source [1]
BLF6G27LS-135 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G27-135 - flangedLDMOST ceramicpackage;2 mounting holes;
2 leads SOT502A
BLF6G27LS-135 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 34 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C;
PL= 135 W (CW) BLF6G27-135 0.5 K/W
BLF6G27LS-135 0.45 K/W
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 3 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
6. Characteristics
7. Application information
[1] Measured within 30 kHz bandwidth.
[2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
7.1 Ruggedness in class-AB operation
The BLF6G27-135 and BLF6G27LS-135 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1200 mA; PL=P
L(1dB); f = 2700 MHz.
Table 6. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V;
ID= 216 mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 4.2 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 30.6 34 - A
IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 420 nA
gfs forward transconductance VDS = 10 V; ID= 6.3 A - 12 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 7.2 A - 0.085 0.135 Ω
Crs feedback capacitance VGS =0 V; VDS =28V;
f=1MHz - 3.15 - pF
Table 7. Application information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel
bandwidth is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2600 MHz; f
3
= 2700 MHz; RF performance at
V
DS
=32V; I
Dq
= 1200 mA; T
case
=25
°
C; unless otherwise specified, in a class-AB production
circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 20 W 14 16 - dB
RLin input return loss PL(AV) =20W - −10 - dB
ηDdrain efficiency PL(AV) = 20 W 19.0 22.5 - %
ACPR885k adjacent channel power ratio
(885 kHz) PL(AV) =20W [1] −48 −52 - dBc
ACPR1980k adjacent channel power ratio
(1980 kHz) PL(AV) =20W [1] −65 −67 - dBc
PL(M) peak output power [2] 185 200 - W
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 4 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 28 / 25; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
7.2.2 Graphs
Table 8. Frame structure
Frame contents Modulation technique Data length
Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit
VDS =32V; I
Dq = 1200 mA; f = 2600 MHz. VDS = 32 V; IDq = 1200 mA; f = 2600 MHz.
Fig 1. EVM as function of average load power;
typical values Fig 2. Power gain and drain efficiency as functions of
average load power; typical values
PL(AV) (W)
0282420161248
001aah641
1.0
1.5
0.5
2.0
2.5
EVM
(%)
0
PL(AV) (W)
0282420161248
001aah642
Gp
14
16
12
18
20
Gp
(dB)
10
ηD10
15
5
20
25ηD
(%)
0
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 5 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
VDS = 32 V; IDq = 1200 mA.
(1) f = 2600 MHz ± 10 MHz
(2) f = 2600 MHz ±20 MHz
(3) f = 2600 MHz ±30 MHz
Fig 3. Adjacent channel power ratio as function of average load power; typical values
PL(AV) (W)
0282420161248
001aah643
−50
−40
−60
−30
−20
ACPR
(dBc)
−70
(2)
(1)
(3)
VDS =32V; I
Dq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4. Power gain and drain efficiency as functions of
frequency; typical values Fig 5. Adjacent channel power ratio as function of
frequency; typical values
f (MHz)
2500 270026502550 2600
001aah644
15
17
19
Gp
(dB)
13
16
18
14
21
23
25ηD
(%)
19
22
24
20
Gp
ηD
f (MHz)
2500 270026502550 2600
001aah645
−65
−55
−45
ACPR
(dBc)
−75
−60
−50
−70
(1)
(2)
(2)
(1)
(2)
(1)
ACPR885k
ACPR1500k
ACPR1980k
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 6 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
VDS =32V;I
Dq = 1200 mA;f = 2600 MHz;Single Carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
VDS =32V;I
Dq = 1200 mA;f = 2600 MHz;Single Carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6. Power gain and drain efficiency as functions of
load power; typical values Fig 7. Adjacent channel power ratio as function of
load power; typical values
001aah646
PL (W)
110
2
10
Gp
15
16
14
18
17
19
Gp
(dB)
13
ηD
14
21
28
7
35
42ηD
(%)
0
001aah647
PL (W)
110
2
10
−75
−45
−55
−65
−35
ACPR
(dBc)
−85
ACPR885k
ACPR1500k
ACPR1980k
(2)
(1)
(1)
(2)
(1)
(2)
VDS =32V; I
Dq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 8. Power gain as function of load power; typical
values Fig 9. Input power as function of load power; typical
values
001aah648
PL (W)
110
2
10
15
16
17
Gp
(dB)
14
(3)
(2)
(1)
001aah649
PL (W)
110
2
10
1
2
3
Pi
(W)
0
(1)
(2)
(3)
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 7 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
8. Test information
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr= 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit
001aah650
R1
C2
C1
C5 C6 C7
C10
L1 C9
C8
C4
VGG VDD
+
−
BLF6G27-135
input-rev 1A
30RF35
NXP
BLF6G27-135
output-rev 1A
30RF35
NXP
C3
R2
Table 9. List of components
For test circuit, see Figure 10.
Component Description Value Remarks
C1, C3, C4, C10 multilayer ceramic chip capacitor 8.2 pF ATC 100B or equivalent
C2 multilayer ceramic chip capacitor 4.7 µF; 50 V TDK C4532X7R1H475M or equivalent
C5 multilayer ceramic chip capacitor 10 µF; 50 V TDK C5750X7R1H106M or equivalent
C9 multilayer ceramic chip capacitor 1.5 µF; 50 V TDK C3225X7R1H155M or equivalent
C6, C7 multilayer ceramic chip capacitor 100 nF Vishay VJ1206Y104KXB or equivalent
C8 electrolytic capacitor 470 µF; 63 V ATC 100B or equivalent
L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent
R1 SMD resistor 5.1 ΩSMD 1206
R2 SMD resistor 9.1 ΩSMD 1206
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 8 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
Table 10. Measured test circuit impedances
f ZiZo
(GHz) (Ω) (Ω)
2.5 1.60 + j1.07 1.44 + j1.86
2.6 1.38 + j2.08 1.17 + j2.80
2.7 1.17 + j2.77 0.97 + j3.41
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 9 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
9. Package outline
Fig 11. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 10 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
Fig 12. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 11 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
10. Abbreviations
11. Revision history
Table 11. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CDMA Code Division Multiple Access
CW Continuous Wave
EVM Error Vector Magnitude
FCH Frame Control Header
FFT Fast Fourier Transform
IBW Instantaneous BandWidth
IS-95 CDMA Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
N-CDMA Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
PUSC Partial Usage of SubChannels
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
WCS Wireless Communications Service
WiMAX Worldwide Interoperability for Microwave Access
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G27-135_BLF6G27LS-135_2 20080526 Product data sheet - BLF6G27-135_
BLF6G27LS-135_1
BLF6G27-135_BLF6G27LS-135_1 20080221 Preliminary data sheet - -
BLF6G27-135_BLF6G27LS-135_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 26 May 2008 12 of 13
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 May 2008
Document identifier: BLF6G27-135_BLF6G27LS-135_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4
7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4
7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Single carrier N-CDMA broadband
performance at 9 W average . . . . . . . . . . . . . . 5
7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
