CS 29 Phase Control Thyristor VRRM = 800/1200 V IT(RMS) = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95C; 180 sine (IT(RMS) current limit) ITSM TVJ = 45C; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 45C; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM; VR = 0 V 35 23 200 215 A A 175 185 A A A A A2s A2s t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 155 145 A2s A2s a 150 A/s 500 A/s 1000 V/s 5 2.5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+150 150 -40...+150 C C C s 200 195 TVJ = TVJM; repetitive, IT = 40 A f = 50 Hz; tP = 200 s; VD = 2/3 VDRM; IG = 0.2 A; non repetitive, IT = IT(AV)M diG/dt = 0.2 A/s h (di/dt)cr TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = IT(AV)M; PGAV p (dv/dt)cr tP = 30 s tP = 300 s VISOL 50/60 Hz RMS; IISOL 1 mA TL 1.6 mm from case; 10 s FC Mounting force 2500 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500 V electrical isolation Low cathode-to-tab capacitance (15 pF typical) Planar passivated chips Epoxy meets UL 94V-0 High performance glass passivated chip Long-term stability of leakage current and blocking voltage Applications Motor control Power converter AC power controller Light and temperature control SCR for inrush current limiting in power supplies or AC drive Advantages Space and weight savings Simple mounting V~ 260 C 11...65 / 2.4...11 N/lb 2 g Weight IXYS reserves the right to change limits, conditions and dimensions. (c) 2003 IXYS All rights reserved Features u IT(RMS) IT(AV)M I2t Maximum Ratings -o Conditions e Symbol t Isolated back surface* 98839A (04/28) CS 29 Conditions IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM 2 mA VT IT 1.5 V VT0 rT For power-loss calculations only (TVJ = 125C) 0.82 16.5 V m VGT VD = 6 V; 10 Characteristic Values = 45 A; TVJ = 25C TVJ = 25C TVJ = -40C 1.0 1.2 V V TVJ = 25C TVJ = -40C 65 80 mA mA 0.2 5 V mA 150 mA IGT VD = 6 V; VGD IGD TVJ = TVJM; VD = 2/3 VDRM IL TVJ = 25C; tP = 10 s; IG = 0.2; diG/dt = 0.2 A/s IH TVJ = 25C; VD = 6 V; RGK = 50 mA tgd TVJ = 25C; VD = 1/2 VDRM; IG = 0.2 A; diG/dt = 0.2 A/s 2 s RthJC RthCK DC current DC current typical 1.2 0.6 K/W K/W a Max. acceleration, 50 Hz 50 m/s2 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 1 1 2 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ =125C 0.1 1 10 100 Fig. 1 Gate trigger range u -o 1000 mA 10000 IG TVJ = 25C s tgd 100 typ. Limit 10 p h a s e ISOPLUS220 Outline 6 4 1000 See CS 30..io1 data sheet for electrical characteristic curves. 5 3 t Symbol (c) 2003 IXYS All rights reserved 1 10 100 IG mA 1000 Fig. 2 Gate controlled delay time tgd CS 29 100 400 2000 50Hz, 80%VRRM VR = 0 V A2s A A ITSM IT 80 300 TVJ = 45C TVJ = 45C 2 It 60 1000 200 40 TVJ = 125C TVJ = 125C 100 20 TVJ = 25C 0.5 1.0 1.5 VT Fig. 3 0 0.001 V 2.0 500 0.01 0.1 1 1 Forward characteristics Fig. 4 Surge overload current ITSM: crest value, t: duration 100 e 80 40 20 30 40 50 60 70 A 0 h 20 25 5 6 7 ms 8 910 t 50 4 K/W 10 K/W 40 30 20 10 50 IT(AV)M 75 100 125 C 150 Tamb p Power dissipation versus forward current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2003 IXYS All rights reserved IT(AV)M 1 K/W 2 K/W a DC 180 sin 120 60 30 4 DC 180 sin 120 60 30 70 60 s 60 80 A 0.1 K/W 0.5 K/W -o 120 PT 10 3 Fig. 5 I2t versus time (1-10 ms) u RthKA : 0 2 t 140 W Fig. 6 s t 0 0.0 0 TVJ = 125C 0 0 20 40 60 80 100 120 C Tcase