IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Boca Semiconductor Corp. TIP120, 121, 122 TIP125, 126, 127 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 K All dim insions in m m . L N O 1 2 3 O A H B J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 12 mA D.C. current gain IC = 0.5 A; VCE = 3 V 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 VCBO VCEO IC Ptot Tj 121 126 80 80 5.0 65 150 VCEsat max. 2.0 hFE min. 1.0 120 125 max. 60 max. 60 max. 121 126 80 80 5.0 VCBO VCEO VEBO http://www.bocasemi.com Continental Device India Limited Data Sheet M A X. 120 125 max. 60 max. 60 max. max. max. RATINGS (at TA=25C unless otherwise specified) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) 3 122 127 100 100 V V A W C V 122 127 100 100 V V V page: 1 Page 1 of 3 Boca Semiconductor Corp. BSC TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Collector current IC Collector current (peak) ICM Base current IB Total power dissipation up to TC = 25C P tot Derate above 25C Total power dissipation up to TA = 25C P tot Derate above 25C Junction temperature Tj Storage temperature T stg THERMAL RESISTANCE From junction to ambient From junction to case max. max. max. max. max max. max max. A A mA W W/C W W/C C C 62.5 1.92 C/W C/W R th j-a R th j-c CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 60 V IE = 0; VCB = 80 V IE = 0; VCB = 100 V IB = 0; VCE = 30V IB = 0; VCE = 40V IB = 0; VCE = 50V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3.0 A; IB = 12 mA IC = 5.0 A; IB = 20 mA Base-emitter on voltage IC = 3A; VCE = 3V D.C. current gain IC = 0.5A; VCE = 3V IC = 3A; VCE = 3V Small signal current gain IC = 3A; VCE = 4V; f = 1 MHz Output capacitance at f = 0.1 MHz PNP IE = 0; VCB = 10V NPN 5.0 8 120 65 0.52 2 0.016 150 -65 to +150 120 125 121 126 122 127 ICBO ICBO ICBO ICEO ICEO ICEO max. 0.2 max. - max. - max. 0.5 max. - max. - - 0.2 - - 0.5 - - - 0.2 - - 0.5 IEBO max. 2.0 VCEO(sus)* VCBO VEBO min. min. min. VCEsat* VCEsat* max. max. 2.0 4.0 V V VBE(on)* max. 2.5 V hFE* min. min. 1.0 1.0 |h fe | min. 4.0 Co Co max. max. 300 200 60 60 80 80 5.0 mA mA mA mA mA mA mA 100 100 V V V pF pF * Pulse test: pulse width 300 s; duty cycle 2%. http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3