RTRT
Line Card in SLOT 1
Z0
BACKPLANE
DS91M047
Line Card in SLOT N-1
M-LVDS Receivers
RT = ZLOADED
Line Card in SLOT N
M-LVDS Receivers
RTRT
Z0
RTRT
Z0
RTRT
Z0
DS91M047
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SNLS145E –JUNE 2008–REVISED APRIL 2013
DS91M047 125 MHz Quad M-LVDS Line Driver
Check for Samples: DS91M047
1FEATURES DESCRIPTION
The DS91M047 is a high-speed quad M-LVDS line
2• DC - 125 MHz / 250 Mbps Low Jitter, Low driver designed for driving clock or data signals to up
Skew, Low Power Operation to four multipoint networks.
• Conforms to TIA/EIA-899 M-LVDS Standard M-LVDS (Multipoint LVDS) is a new family of bus
• Controlled Transition Times (2 ns typ) interface devices based on LVDS technology
Minimize Reflections specifically designed for multipoint and multidrop
• 8 kV ESD on M-LVDS Pins Protects Adjoining cable and backplane applications. It differs from
Components standard LVDS in providing increased drive current to
handle double terminations that are required in multi-
• Flow-Through Pinout Simplifies PCB Layout point applications. Controlled transition times
• Industrial Operating Temperature Range minimize reflections that are common in multipoint
(−40°C to +85°C) configurations due to unterminated stubs.
• Available in a Space Saving SOIC-16 Package The DS91M047 accepts LVTTL/LVCMOS input levels
and translates them to M-LVDS signal levels with
APPLICATIONS transition times of greater than 1 ns. The device
provides the DE and DE inputs that are ANDed
• Multidrop / Multipoint Clock and Data together and control the TRI-STATE outputs. The DE
Distribution and DE inputs are common to all four drivers.
• High-Speed, Low Power, Short-Reach
Alternative to TIA/EIA-485/422 The DS91M047 has a flow-through pinout for easy
PCB layout. The DS91M047 provides a new
• Clock Distribution in AdvancedTCA (ATCA) alternative for high speed multipoint interface
and MicroTCA (μTCA, uTCA) Backplanes applications. It is packaged in a space saving SOIC-
16 package.
TYPICAL APPLICATION
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2008–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
DE
DE
DI0
DI1
DI2
DI3
B0
A0
B1
A1
B2
A2
B3
A3
DE
DI0
DI1
VDD
B0
A0
A1
B1
1
2
3
4
16
14
13
15
GND
DI2
DI3
DE
5
6
7
8
B2
A2
A3
B3
12
10
9
11
DS91M047
SNLS145E –JUNE 2008–REVISED APRIL 2013
www.ti.com
Connection Diagrams
PIN DESCRIPTIONS
Pin No. Name Description
2, 3, 6, 7 DI Driver input pin, LVCMOS compatible.
10, 11, 14, 15 A Non-inverting driver output pin, M-LVDS levels.
9, 12, 13, 16 B Inverting driver output pin, M-LVDS levels.
1 DE Driver enable pin: When DE is low, the driver is disabled. When DE is high and DE is low or open, the
driver is enabled. If both DE and DE are open circuit, then the driver is disabled.
8 DE Driver enable pin: When DE is high, the driver is disabled. When DE is low or open and DE is high, the
driver is enabled. If both DE and DE are open circuit, then the driver is disabled.
4 VDD Power supply pin, +3.3V ± 0.3V
5 GND Ground pin
TRUTH TABLE
Enables Input Outputs
DE DE DI A B
L L H
H L H H L
All other combinations of ENABLE inputs X Z Z
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)
Power Supply Voltage −0.3V to +4V
LVCMOS Input Voltage −0.3V to (VDD + 0.3V)
M-LVDS Output Voltage −1.9V to +5.5V
M-LVDS Output Short Circuit Current Duration Continuous
Junction Temperature +140°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range Soldering (4 sec.) +260°C
Maximum Package Power Dissipation @ +25°C D Package 2.21W
Derate D Package 19.2 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, θJA +52°C/W
JEDEC) θJC +19°C/W
ESD Susceptibility HBM ≥8 kV
MM ≥250V
CDM ≥1250V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the is not implied. The Recommended Operating Conditions indicate conditions at which the
device is functional and the device should not be operated beyond such conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
RECOMMENDED OPERATING CONDITIONS Min Typ Max Units
Supply Voltage (VDD) +3.0 +3.3 +3.6 V
Voltage at Any Bus Terminal (Separate or Common-Mode) −1.4 +3.8 V
High Level Input Voltage (VIH) 2.0 VDD V
Low Level Input Voltage (VIL) 0 0.8 V
Operating Free Air Temperature (TA)−40 +25 +85 °C
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DC ELECTRICAL CHARACTERISTICS(1)(2)(3)(4)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
LVCMOS DC Specifications
VIH High-Level Input Voltage 2.0 VDD V
VIL Low-Level Input Voltage GND 0.8 V
IIH High-Level Input Current VIH = 3.6V -15 ±1 15 μA
IIL Low-Level Input Current VIL = 0V -15 ±1 15 μA
VCL Input Clamp Voltage IIN = -18 mA -1.5 V
M-LVDS DC Specifications
|VAB| Differential Output Voltage Magnitude 480 650 mV
RL= 50Ω, CL= 5 pF
ΔVAB Change in Differential Output Voltage Magnitude See Figure 1 and Figure 3 −50 50 mV
Between Logic States
VOS(SS) Steady-State Common-Mode Output Voltage 0.30 1.6 2.10 V
RL= 50Ω
|ΔVOS(SS)| Change in Steady-State Common-Mode Output Voltage See Figure 1 and Figure 2 0 50 mV
Between Logic States
VA(OC) Maximum Steady-State Open-Circuit Output Voltage 0 2.4 V
See Figure 4
VB(OC) Maximum Steady-State Open-Circuit Output Voltage 0 2.4 V
VP(H) Voltage Overshoot, Low-to-High Level Output(5) RL= 50Ω, CL= 5 pF 1.2VSS V
CD= 0.5 pF, see Figure 6
VP(L) Voltage Overshoot, High-to-Low Level Output(5) −0.2VSS V
and Figure 7
IOS Output Short-Circuit Current(6) See Figure 5 -43 43 mA
VA= 3.8V, VB= 1.2V 0 32 μA
IADriver High-Impedance Output Current VA= 0V or 2.4V, VB= 1.2V −20 20 μA
VA=−1.4V, VB= 1.2V −32 0 μA
VA= 3.8V, VB= 1.2V 0 32 μA
IBDriver High-Impedance Output Current VA= 0V or 2.4V, VB= 1.2V −20 20 μA
VA=−1.4V, VB= 1.2V −32 0 μA
IAB Driver High-Impedance Output Differential Curent VA= VB,−1.4V ≤V≤3.8V −4 4 μA
(IA−IB)
IA(OFF) Driver High-Impedance Output Power-Off Current VA= 3.8V, VB= 1.2V
DE = 0V 0 32 μA
0V ≤VDD ≤1.5V
VA= 0V or 2.4V, VB= 1.2V
DE = 0V −20 20 μA
0V ≤VDD ≤1.5V
VA=−1.4V, VB= 1.2V
DE = 0V −32 0 μA
0V ≤VDD ≤1.5V
IB(OFF) Driver High-Impedance Output Power-Off Current VA= 3.8V, VB= 1.2V
DE = 0V 0 32 μA
0V ≤VDD ≤1.5V
VA= 0V or 2.4V, VB= 1.2V
DE = 0V −20 20 μA
0V ≤VDD ≤1.5V
VA=−1.4V, VB= 1.2V
DE = 0V −32 0 μA
0V ≤VDD ≤1.5V
(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
(2) Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground
except VOD and ΔVOD.
(3) Typical values represent most likely parametric norms for VDD = +3.3V and TA= +25°C, and at the Recommended Operating Conditions
at the time of product characterization and are not ensured.
(4) CLincludes fixture capacitance and CDincludes probe capacitance.
(5) Specification is specified by characterization and is not tested in production.
(6) Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only.
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DC ELECTRICAL CHARACTERISTICS(1)(2)(3)(4) (continued)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
IAB(OFF) Driver High-Impedance Output Power-Off Current VA= VB,−1.4V ≤V≤3.8V
(IA(OFF) −IB(OFF)) DE = 0V −4 4 μA
0V ≤VDD ≤1.5V
CADriver Output Capacitance 7.8 pF
CBDriver Output Capacitance 7.8 pF
VDD = 0V
CAB Driver Output Differential Capacitance 3 pF
CA/B Driver Output Capacitance Balance (CA/CB) 1
ICC Power Supply Current RL= 50Ω(All Outputs)
DI = VDD or GND (All Inputs) 65 75 mA
DE = VDD, DE = GND
f = 125 MHz
ICCZ TRI-STATE Power Supply Current RL= 50Ω(All Outputs)
DI = VDD or GND (All Inputs) 19 24 mA
DE = GND, DE = VDD
SWITCHING CHARACTERISTICS(1)(2)(3)
Over supply voltage and operating temperature ranges, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
tPHL Differential Propagation Delay High to Low 1.5 3.1 5.0 ns
tPLH Differential Propagation Delay Low to High 1.5 3.1 5.0 ns
tSKD1 Differential Pulse Skew |tPHL −tPLH|(4)(5) 0 70 140 ps
RL= 50Ω
tSKD2 Channel-to-Channel Skew(4)(6) 0 70 200 ps
CL= 5 pF,
tSKD3 Differential Part-to-Part Skew(4)(7) CD= 0.5 pF 0 0.8 1.5 ns
(Constant TAand VDD)See Figure 6 and Figure 7
tSKD4 Differential Part-to-Part Skew(8) 0 3.5 ns
tTLH Rise Time(4) 1.1 2.0 3.0 ns
tTHL Fall Time(4) 1.1 2.0 3.0 ns
tPHZ Disable Time High to Z 7 12.5 ns
RL= 50Ω
tPLZ Disable Time Low to Z 7 12.5 ns
CL= 5 pF,
CD= 0.5 pF
tPZH Enable Time Z to High 7 12.5 ns
See Figure 8 and Figure 9
tPZL Enable Time Z to Low 7 12.5 ns
fMAX Maximum Operating Frequency See(4) 125 MHz
(1) The Electrical Characteristics list ensured specifications under the listed Recommended Operating Conditions except as otherwise
modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not
ensured.
(2) Typical values represent most likely parametric norms for VDD = +3.3V and TA= +25°C, and at the Recommended Operating Conditions
at the time of product characterization and are not ensured.
(3) CLincludes fixture capacitance and CDincludes probe capacitance.
(4) Specification is specified by characterization and is not tested in production.
(5) tSKD1, |tPLHD −tPHLD|, Pulse Skew, is the magnitude difference in differential propagation delay time between the positive going edge and
the negative going edge of the same channel.
(6) tSKD2, Channel-to-Channel Skew, is the difference in propagation delay (tPLHD or tPHLD) among all output channels.
(7) tSKD3, Part-to-Part Skew, is defined as the difference between the minimum and maximum differential propagation delays. This
specification applies to devices at the same VDD and within 5°C of each other within the operating temperature range.
(8) tSKD4, Part-to-Part Skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices
over recommended operating temperature and voltage ranges, and across process distribution. tSKD4 is defined as |Max −Min|
differential propagation delay.
Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
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A
B
~ 1.9V
~ 1.3V
'VOS(SS)
VOS(PP)
VOS
DS91M047
SNLS145E –JUNE 2008–REVISED APRIL 2013
www.ti.com
PARAMETER MEASUREMENT INFORMATION
Figure 1. Differential Driver Test Circuit
Figure 2. Differential Driver Waveforms
Figure 3. Differential Driver Full Load Test Circuit
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PARAMETER MEASUREMENT INFORMATION (continued)
Figure 4. Differential Driver DC Open Test Circuit
Figure 5. Differential Driver Short-Circuit Test Circuit
Figure 6. Driver Propagation Delay and Transition Time Test Circuit
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PARAMETER MEASUREMENT INFORMATION (continued)
Figure 7. Driver Propagation Delay and Transition Time Waveforms
Figure 8. Driver TRI-STATE Delay Test Circuit
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4.5
4.0
3.5
3.0
2.5
2.0
1.5-50 -10 30 70 110 150
f = 125 MHz
DRIVER PROPAGATION DELAY (tPHLD) (ns)
TEMPERATURE (°C)
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
180
150
120
90
60
30
00 25 50 75 100 125
VCC = 3.3V
TA = 25°C
RL = 50:On all CH)
DE = H
DE* = L
POWER SUPPLY CURRENT (mA)
FREQUENCY (MHz)
900
750
600
450
300
150
00 25 50 75 100 125
f = 1 MHz
VCC = 3.3V
TA = 25°C
VOD - DRIVER OUTPUT AMPLITUDE (mV)
RESISTIVE LOAD (:)
4.5
4.0
3.5
3.0
2.5
2.0
1.5-50 -10 30 70 110 150
f = 125 MHz
DRIVER PROPAGATION DELAY (tPLHD) (ns)
TEMPERATURE (°C)
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
2.8
2.5
2.2
1.9
1.6
1.3
1.0-50 -10 30 70 110 150
f = 125 MHz
DRIVER RISE TIME (10-90%) (ns)
TEMPERATURE (°C)
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
2.8
2.5
2.2
1.9
1.6
1.3
1.0-50 -10 30 70 110 150
f = 125 MHz
DRIVER FALL TIME (10-90%) (ns)
TEMPERATURE (°C)
VCC = 3.0V
VCC = 3.3V
VCC = 3.6V
DS91M047
SNLS145E –JUNE 2008–REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 10. Driver Rise Time as a Function of Temperature Figure 11. Driver Fall Time as a Function of Temperature
Figure 12. Driver Output Signal Amplitude as a Function of Figure 13. Driver Propagation Delay (tPLHD) as a Function
Resistive Load of Temperature
Figure 14. Driver Propagation Delay (tPHLD) as a Function Figure 15. Driver Power Supply Current as a Function of
of Temperature Frequency
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SNLS145E –JUNE 2008–REVISED APRIL 2013
REVISION HISTORY
Changes from Revision D (April 2013) to Revision E Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 10
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PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
DS91M047TMA/NOPB ACTIVE SOIC D 16 48 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS91M047
TMA
DS91M047TMAX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS91M047
TMA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DS91M047TMAX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Apr-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DS91M047TMAX/NOPB SOIC D 16 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Apr-2013
Pack Materials-Page 2
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