BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX70 Series
types are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODES: BCX70G: AG
BCX70H: AH
BCX70J: AJ
BCX70K: AK
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=45V 20 nA
ICBO V
CB=45V, TA=150°C 20 μA
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10μA 45 V
BVCEO I
C=10mA 45 V
BVEBO I
E=1.0μA 5.0 V
VCE(SAT) I
C=10mA, IB=250μA 0.05 0.35 V
VCE(SAT) I
C=50mA, IB=1.25mA 0.10 0.55 V
VBE(SAT) I
C=10mA, IB=250μA 0.60 0.85 V
VBE(SAT) I
C=50mA, IB=1.25mA 0.70 1.05 V
VBE(ON) V
CE=5.0V, IC=2.0mA 0.55 0.75 V
fT V
CE=5.0V, IC=10mA, f=100MHz 100 250 MHz
Cc V
CB=10V, IE=0, f=1.0MHz 1.7 pF
Ce V
EB=0.5V, IC=0, f=1.0MHz 11 pF
NF VCE=5.0V, IC=200μA, RS=2.0kΩ,
f=1.0kHz, BW=200Hz 6.0 dB
BCX70G BCX70H BCX70J BCX70K
MIN MAX MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=10μA 40 30 100
hFE V
CE=5.0V, IC=2.0mA 120 220 180 310 250 460 380 630
hFE V
CE=1.0V, IC=50mA 50 70 90 100
SOT-23 CASE
R2 (20-November 2009)
www.centralsemi.com
BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE MARKING CODE
BCX70G AG
BCX70H AH
BCX70J AJ
BCX70K AK
www.centralsemi.com
R2 (20-November 2009)
