< IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .......................................... 150A Collector-emitter voltage V CES ......................... 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 C Flat base Type Copper base plate (non-plating) Tin plating pin terminals RoHS Directive compliant Dual (Half-Bridge) Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION TERMINAL Dimension in mm SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Es2 (39) Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 C1 (48) Tr2 C2E1 (24) Di2 Di1 Th Tr1 NTC The tolerance of size between terminals is assumed to be 0.4. E2 (47) G2 (38) t=0.8 TH1 TH2 (1) (2) Publication Date : December 2012 1 G1 (15) Es1 Cs1 (16) (22) C2E1 (23) < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 C, unless otherwise specified) INVERTER PART IGBT/FWDi Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited 20 V IC Item DC, TC=120 C Collector current ICRM Ptot IE IERM (Note1) (Note2, 4) 150 (Note3) 300 Pulse, Repetitive Total power dissipation (Note1) Conditions TC=25 C (Note2, 4) 1150 (Note2) Emitter current A W 150 Pulse, Repetitive (Note3) A 300 MODULE Symbol Item Conditions Rating Unit V Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 Tjmax Maximum junction temperature Instantaneous event (overload) 175 TCmax Maximum case temperature (Note4) 125 Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150 Tstg Storage temperature - -40 ~ +125 C C ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 A VGE(th) Gate-emitter threshold voltage IC=15 mA, VCE=10 V V 5.4 6.0 6.6 T j =25 C - 1.80 2.25 VGE=15 V, T j =125 C - 2.00 - (Terminal) T j =150 C - 2.05 - T j =25 C - 1.70 2.15 VGE=15 V, T j =125 C - 1.90 - (Chip) T j =150 C - 1.95 - - - 15 IC=150 A VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time IC=150 A VEC Emitter-collector voltage (Note5) , , VCE=10 V, G-E short-circuited VCC=600 V, IC=150 A, VGE=15 V VCC=600 V, IC=150 A, VGE=15 V, RG=0 , Inductive load - - 3.0 - - 0.25 - 350 - - - 800 - - 200 - - 600 - - 300 T j =25 C - 1.80 2.25 G-E short-circuited, T j =125 C - 1.80 - (Terminal) T j =150 C - 1.80 - IE=150 A (Note1) (Note5) IE=150 A (Note5) (Note5) , T j =25 C - 1.70 2.15 G-E short-circuited, , T j =125 C - 1.70 - (Chip) T j =150 C - 1.70 - V V nF nC ns V V trr (Note1) Reverse recovery time VCC=600 V, IE=150 A, VGE=15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=0 , Inductive load - 8.0 - C Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 - Eoff Turn-off switching energy per pulse VGE=15 V, RG=0 , T j =150 C, - 16.0 - Reverse recovery energy per pulse Inductive load - 12.2 - mJ - - 1.8 m - 13 - Err (Note1) R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 C (Note4) Per switch Publication Date : December 2012 2 mJ < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont; T j =25 C, unless otherwise specified) NTC THERMISTOR PART Symbol Item (Note4) R25 Zero-power resistance TC=25 C R/R Deviation of resistance R100=493 , TC=100 C B(25/50) B-constant Approximate by equation P25 Limits Conditions Power dissipation TC=25 C (Note4) (Note7) (Note4) Max. Unit Min. Typ. 4.85 5.00 5.15 k -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Rth(j-c)D Rth(c-s) (Note4) Contact thermal resistance Limits Conditions (Note4) Min. Typ. Max. Junction to case, per Inverter IGBT - - 0.13 Junction to case, per Inverter FWDi - - 0.23 - 15 - Case to heat sink, per 1 module, Thermal grease applied (Note7) Unit K/W K/kW MECHANICAL CHARACTERISTICS Symbol Item Limits Conditions Min. Typ. Max. Unit Mt Mounting torque Main terminals M 6 screw 3.5 4.0 4.5 N*m Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N*m ds Creepage distance da Clearance m Weight - ec Flatness of base plate On the centerline X, Y Terminal to terminal 11.55 - - Terminal to base plate 12.32 - - Terminal to terminal 10.00 - - Terminal to base plate 10.85 - - - 350 - g 0 - +100 m (Note8) Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. R 1 1 6. B ( 25 / 50) ln( 25 ) /( ), R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of =0.9 W/(m*K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side mm -:Concave +:Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "ST2.6x10 or ST2.6x12 self tapping screw" The length of the screw depends on the thickness of the PCB. Publication Date : December 2012 3 mm < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions VCC (DC) Supply voltage Applied across P-N terminals VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 terminals RG External gate resistance Per switch CHIP LOCATION (Top view) Limits Min. Typ. Max. Unit - 600 850 13.5 15.0 16.5 V V 0 - 30 Dimension in mm, tolerance: 1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor Publication Date : December 2012 4 < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS vGE iE C1 Cs1 90 % 0V 0 iE t Es1 + C2 E1 VC C IE iC -V GE +V GE t Irr vC E vGE -V GE 0.5xI r r G2 iC 10% 0A Es2 E2 tf tr t d( o n) t t d ( of f ) Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE iC iC ICM vCE trr 0A 90 % RG 0V Q r r =0.5xI r r xt r r Load G1 VCC IEM vEC ICM VCC vCE VCC t 0A 0.1xICM 0.1xVCC 0.1xVCC 0 0.02xICM 0 t ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) TEST CIRCUIT C1 S hortcircui ted 48 Cs1 Shortci rcuited VGE=15 V G1 IC 15 C1 48 22 22 IE S hortcircui ted G1 15 V Es1 V C2E1 VGE=15 V IC G2 16 23/24 Shortci rcuited 38 Tr1 23/24 C2E1 S hortcircui ted 47 Tr2 Di2 Di1 VEC test circuit Publication Date : December 2012 5 E2 Es2 47 39 V C E s a t test circuit IE G2 38 39 V Es1 16 Shortci rcuited E2 Es2 V Cs1 < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 C VGE=15 V (Chip) VGE=20 V 3 12 V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) IC (A) COLLECTOR CURRENT 13.5 V 15 V 250 200 11 V 150 10 V 100 9V 50 T j =150 C T j =125 C 2.5 2 1.5 T j =25 C 1 0.5 0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 50 VCE (V) T j =25 C 100 150 200 COLLECTOR CURRENT 250 300 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) (Chip) 1000 10 T j =125 C IC=300 A 8 IE (A) IC=150 A 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) (Chip) 3.5 300 IC=60 A 4 2 100 T j =150 C T j =25 C 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 10 20 0 VGE (V) 1 2 EMITTER-COLLECTOR VOLTAGE Publication Date : December 2012 6 3 VEC (V) < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C VCC=600 V, VGE=15 V, IC=150 A, INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C 1000 1000 td(off) td(off) td(on) tr SWITCHING TIME (ns) SWITCHING TIME (ns) td(on) tf 100 tr 10 tf 100 10 10 100 1000 COLLECTOR CURRENT 1 IC (A) 10 100 EXTERNAL GATE RESISTANCE RG () HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, IC/IE=150 A, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C 100 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eon Eon Eoff Err 10 1 Eoff 10 Err 1 10 100 1000 0.1 1 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : December 2012 7 100 RG () < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 C VCC=600 V, VGE=15 V, RG=0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C 100 1000 Cies trr t r r (ns), I r r (A) CAPACITANCE (nF) 10 Coes 1 Cres 0.1 0.01 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 10 VCE (V) 1000 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=150 A, Tj=25 C Single pulse, TC=25 C R t h ( j - c ) Q =0.13 K/W, R t h ( j - c ) D =0.23 K/W 1 NORMALIZED TRANSIENT THERMAL RESISTANCE Zth(j-c) VGE (V) 100 EMITTER CURRENT 20 GATE-EMITTER VOLTAGE Irr 100 15 10 5 0 0 100 200 GATE CHARGE 300 400 500 QG (nC) 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : December 2012 8 0.1 1 10 < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) RESISTANCE R (k) 100 10 1 0.1 -50 -25 0 25 50 TEMPERATURE 75 100 125 T (C) Publication Date : December 2012 9 < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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(c) 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : December 2012 10