©2000 Fairchild Semiconductor International Rev. A, February 2000
BD135/137/139
1TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Ba se Voltage : BD135
: BD137
: BD139
45
60
80
V
V
V
VCEO Collector-Emitter Voltage : BD135
: BD137
: BD139
45
60
80
V
V
V
VEBO Emitter-Base Volt age 5 V
IC Collector Current (DC) 1.5 A
ICP Collector Current (Pulse) 3.0 A
IB Base Current 0.5 A
PC Collector Dissipation (TC=25°C) 12.5 W
PC Collector Dissipation (Ta=25°C) 1.25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol P arameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Volt age
: BD135
: BD137
: BD139
IC = 30mA, IB = 0 45
60
80
V
V
V
ICBO Collector Cut-off Current VCB = 30V, IE = 0 0.1 µA
IEBO Emitter Cu t- off C u r re n t VEB = 5V, IC = 0 10 µA
hFE1
hFE2
hFE3
DC Current Gain : ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
VCE = 2V, IC = 5mA
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 150mA
25
25
40
40 250
160
VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.5 V
VBE(on) Base-Emitter ON Voltage VCE = 2V, IC = 0.5A 1 V
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250
BD135/137/139
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD135/137/139
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
10 100 1000
0
10
20
30
40
50
60
70
80
90
100 VCE = 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0
50
100
150
200
250
300
350
400
450
500
IC = 10 IB
IC = 20 IB
VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
BE
(on)
V
CE
= 5V
V
BE
(sat)
I
C
= 10 I
B
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100
0.01
0.1
1
10
BD139
BD137
BD135
10us
100us
1ms
DC
IC MAX. (Pulsed)
IC MAX. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD135/137/139
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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