5-1
Semiconductor
Features
• 6.2A and 5.4A, 600V
•r
DS(ON) = 1.2Ω and 1.6Ω
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17426.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRFBC40 TO-220AB IRFBC40
IRFBC42 TO-220AB IRFBC42
NOTE: When ordering, include the entire part number. G
D
S
DRAIN (FLANGE)
GATE
SOURCE
DRAIN
January 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 2157.2
IRFBC40,
IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFBC40 IRFBC42 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 600 600 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 600 600 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D6.2 5.4 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID3.9 3.4 A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 25 22 A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD125 125 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . EAS 570 570 mJ
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 11) 600 - - V
Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 4) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRFBC40 6.2 - - A
IRFBC42 5.4 - - A
Gate to Source Leakage IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A, (Figures 9, 10)
IRFBC40 - 0.97 1.2 Ω
IRFBC42 - 1.2 1.6 Ω
Forward Transconductance (Note 4) gfs VDS ≥ 100V, IDS = 3.4A, (Figure 13) 4.7 70 - S
Turn-On Delay Time td(ON) VDD = 300V, ID≈ 6.2A, RG = 9.1Ω, VGS = 10V,
RL = 47Ω, (Figures 17, 18)
Switching Speeds are Essentially ndependent of
Operating Temperature
-1320ns
Rise Time tr-1827ns
Turn-Off Delay Time td(OFF) -5583ns
Fall Time tf-2030ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS,
(Figures 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-4060nC
Gate to Source Charge Qgs - 5.5 - nC
Gate to Drain “Miller” Charge Qgd -20-nC
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 12) - 1300 - pF
Output Capacitance COSS - 160 - pF
Reverse Transfer Capacitance CRSS -45-pF
IRFBC40, IRFBC42
5-3
IRFBC40, IRFBC42
Internal Drain Inductance LDMeasured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC - - 1.0 oC/W
Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 80 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
- - 6.2 A
Pulse Source to Drain Current
(Note 3) ISDM - - 25 A
Diode Source to Drain Voltage (Note 2) VSD TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 8) - - 1.5 V
Reverse Recovery Time trr TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 8.0 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. (Figures 15, 16).
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE (oC)
50 75 10025
10
8
6
0
4
ID, DRAIN CURRENT (A)
2
125
IRFBC40
150
IRFBC42
5-4
IRFBC40, IRFBC42
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
Typical Performance Curves
Unless Otherwise Specified (Continued)
1
0.1
10-2
10-2
10-5 10-4 10-3 0.1 1 10
t1, RECTANGULAR PULSE DURATION (s)
10-3
ZθJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE (oC/W)
DUTY FACTOR: D = t1/t2
t2
PDM
t1
NOTES:
t2
PEAK TJ= PDM x ZθJC x RθJC + TC
0.02
0.01
0.5
0.1
0.2
0.05
0.02
SINGLE PULSE
10
1
110
102
0.1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V) 103
102
10µs
100µs
1ms
10ms
IRFBC40
TJ = MAX RATED
SINGLE PULSE
TC = 25oC
IRFBC40
IRFBC42
IRFBC42
OPERATION IN THIS REGION
IS LIMITED BY rDS(ON)
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
60 120 180 2400 300
10
8
6
0
4
ID, DRAIN CURRENT (A)
VGS = 5.0V
80µs PULSE TEST
2VGS = 4.5V
VGS = 4.0V
VGS = 5.5V
VGS = 10V
VGS = 6.0V
VDS, DRAIN TO SOURCE VOLTAGE (V)
36912015
10
8
6
0
4
ID, DRAIN CURRENT (A)
80µs PULSE TEST
2
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
VGS = 5.5V
VGS = 6.0V
VGS =10V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
0 246810
80µs PULSE TEST
VDS ≥100V
TJ = 150oCTJ = 25oC
10-2
5-5
IRFBC40, IRFBC42
FIGURE 8. SOURCE TO DRAIN DIODE V OLTAGE FIGURE 9. DRAIN T O SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
10
1
0.1
0 0.3 0.6 0.9 1.2 1.5
TJ = 150oC
TJ = 25oC
24
ID, DRAIN CURRENT (A)
612
18
030
5.0
4.0
3.0
0
2.0 VGS = 20V
1.0
VGS = 10V
80µs PULSE TEST
DRAIN TO SOURCE ON RESISTANCE
0
3.0
1.8
0.6
80-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
2.4
1.2
060 120 160
-20-40 20 40 100 140
ID = 3.4A
VGS = 10V
ON RESISTANCE
1.25
1.05
0.85
60-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
1.15
0.95
0.75 -20 20 100 160
BREAKDOWN VOLTAGE
0-40 40 80 120 140
ID = 250µA
0 2 10 20 50 102
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
3000
2400
1800
1200
600
05
CRSS
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
ID, DRAIN CURRENT (A)
2468010
10
8
6
0
4
gfs, TRANSCONDUCTANCE (S)
80µs PULSE TEST
2
VDS ≥100V
TJ = 150oC
TJ = 25oC
5-6
IRFBC40, IRFBC42
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
Qg(TOT), TOTAL GATE CHARGE (nC)
12 24 36 48060
4
20
8
GATE TO SOURCE VOLTAGE (V)
16
VDS = 360V
ID = 6.2A
FOR TEST CIRCUIT, SEE FIGURES 19, 20
VDS = 240V
VDS = 120V
12
0
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
5-7
IRFBC40, IRFBC42
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
