Numerical Index 2N3582-~-2N3673 zie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =i = = 5 | se | REPLACE | PAGE Po |B] Ts | Vos | Vee |= fre @ Ic Voasan @| Bl 4 iB TRE 7/3! ment | numer | USE 5 ef SEAN Sol |B] Tel z\a @ 25C |B] C | (volts) | (volts) |S | (min) (max) >] (volts) 5 3 5/!3 2N3582 S| P VID 0.4m) A | 200 50 40 | 0 | 100 | 300 0.1M 0.5 5.0M 100 | E 30M | T 2N3583 S}|N |MI2251 7-200] HPA 350m, C | 200 250 175 | 0 40 | 200 O.5A 5.0 1.0A 25/E 10M |] T 2N3584 |S|N PMS 35WmC | 200 | 330] 250/0]8.0]; 140] 1.0A] 0.75] 1.04 10M | T 2N3585 |S] N } 2N3767 7-142 | PMS 35w | 200 | 440 | 30010]8.0] 140] 1,0A] 0.75} 1.04 10M | T 2N3586 ce CHP 125M A | 200 45 45 ]0 O.1M{T 2N3587 S|N DFA 0.5W) A | 200 60 4510 80 | 500 1.0M 1.0 10M 80M | T 2N3588 | G{P RFC O.IW A] 85 25 20 1.0M 200M | T 2N3589 S|N HPA 2,.0W) A | 175 200 200 |R 30 90 0.2A 2.0 0.24 30 ,E 15M |T 2N3590 |S|WN HPA 2.CW) A | 175} 200 | 200]R] 75] 150] 0.2A 2.0} 0.24 75 }E 15M | T 2N3591 |S] N HPA L.cw A |175] 200 | 200/R | 30] 90] 0.24 2.0] 0.24 30 | E 15M |T 2N3592 S|N HPA 1.0W) A | 175 200 200 {R 75 } 150 0,2A 2.0 0.24 7S [E 15M | T 2N3593 S|N HPA 1.CWl A 1175 200 200 |R 30 90 O.2A 2.0 Q.24 30 1 E 15M | T 2N3594 |S|{N HPA L.cCWhA {175} 200 | 200]R | 75] 150] 0.2A 2.0] 0.24 7S)E 15M | T 2N3595 | S| N HPA 1.5WA]175} 200 | 200/R} 30] 90] 0.24 2.0] 0.2A 30 |E 15M] T 2N3596 | S/N HPA 1.5W)A ]175 | 200 | 200]R | 7542150] 0.24 2.0} 0.24 75 |E 15M] T 2N3597 | S| N | 2N3767 7-142 | PHS 100W] | 200 60 401;0] 40] 120 10A 0.5 LOA 75 1E 30M | T 2N3598 | S| N j 2N3446 7-111) PHS LoOW Gc | 200 80 60 }0 | 40 | 120 10A 0.5 10A 75 )z 30M ) T 2N3599 | S| N | 2N3447 7-111] PHS 100W} C | 200 | 100 80 |0]{ 40} 120 10A 0.5 10A 75,5 30M | T 2N3600 S|N RFA 0. 2wW) A | 200 30 15 | 0 20 | 150 3.0M 40/5 850M | T 2N3601 G]P PMS | 0.286W] C | 100 100 40] 0 60 | 180 1.0A 0.2 O.1A 50 ]}E 20M | T 2N3602 G|P PMS | 0.286W] C | 100 100 40 | 0 60 | 180 1,0A 0.2 0.14 50 ]E 20M | T 2N3603 | G|P PMS | 0.286W/ C | 100 | 130 55 [0] 60]180}] 1.04 0.2] O.1A 50 [E 20M | T 2N3604 | GIP PMS | 0.286WiC {100 ] 130 55 |0] 60/180] 1.0A 0.2] O.1A 50 |E 20M | T 2N3605 S| N | MPS3646 5-95 MSC O.2W) A { 150 18 14 {0 30 10M 0.25 10M 300M | T 2N3605A |S | N MSS 320M A | 120 40 15 | 0 30 | 120 10M 0.25 10M 300M | T 2N3606 {S| N | MPS3646 | 5-95 | MSC 0.2W) A | 150 18 14]0} 30 10M | 0.25 10M 300M | T 2N3606A |S [| N MSS 320M A | 120 40 15 [0 30 | 120 10M 0.25 10M 300M | T oe S| N | MPS3646 5-95 MSC 0.2W) A | 150 18 14/90 30 10M 0.25 10M 300M | T 2N3608 an Field Effect Transistors, see Table on Page 1-166 2N3611 G|P 7-118] LPA 85w] Cc | 110 40 30 |S 35 70 3.0A 0.25 3.0A 40 [E 0.3M{/T 2N3612 G)P 7-118) LPA 85W) Cc ) 110 60 45])8 35 70 3.0A 0.25 3.0A 40 )E 0.3M]T 2N3613 G{P 7-118] LPA 85wic | 110 40 30 |S 60 | 120 3.0A 0.25 3.0A 60 | E 0.3M/T 2N3614 |G] P 7-118} LPA 85 C | 110 60 45|/S | 60]120] 3.0A] 0.25] 3.0A 60)E }] 0.3M|T 2N3615 GIP 7-121] LPA 85) C | 110 80 60 |S 30 60 3.0A 0.25 3.0A 40 |E 0.3M{T 2N3616 |G|P 7-121] LPA 85w) Cc | 110 | 100 75 |S} 30] 60] 3.0A] 0,25] 3.0A 40}E | 0.3M|T 2N3617 | G\P 7-121) LEA 854) C } 110 80 60}S |] 45] 90) 3.0A] 0.25] 3.04 60 ]}E |] 0.3M}T 2N3618 |G|P 7-121) LPA 851 C | 110] 100 75/S | 45] 904) 3.0A ] 0.25] 3.04 60 ]E |] 0.3M|T 2N3619 | S{N HPA 7.50) C | 175 75 40,;90] 40 1,0A | 0.75] 1.0A 200M | T 2N3620 | S|N HPA 7.501 C [175 75 40}; a] 40 1.0A 1.0] 3.0A 200M | T 2N3621 | S/N HPA 30") C | 175 75 40]|0] 40 1.0A | 1.25] 5.0A 200M | T 2N3622 |S|N HPA 30W| C | 175 75 40104 40 1.0A 4 1.25) 5.04 200M | T 2N3623 | S|N HPA 7.54) C | 175 75 40 ]0} 40 1.0A | 0.75] 1.0A 200M | T 2N3624 | S|N HPA 7.5 C 1175 75 40/90] 40 1.0A 1.0] 3.04 200M | T 2N3625 | S|N HPA 30W} Cc | 175 75 40} 0] 40 1.0A | 1.25] 5.0A 200M | T 2N3626 S|N HPA 30W] C | 175 75 40]0 40 1.0A 1.25 5.0A 200M | T 2N3627 | S|N HPA 7.5W)C 4175} 100 50 | 0] 40 1L.0A | 0.75] 1.04 200M | T 2N3628 S|N HPA 7.5W)C [175 100 5010 40 1L.0A 1.0 3.0A 200M | T 2N3629 | S|N HPA 30W) Cc | 175 | 100 50 }0] 40 1.0A 7 1.25] 5.0A 200M | T 2N3630 Sj N HPA 30W} C | 175 100 50 |} 0 40 1.0A 1.25 5.0A 200M | T 2N3631 Field Effect Transistors, see Ta>le on Page 1-166 2N3632 |S|N 9-74 | HPA 23w| C | 200 65 40 |O | 10} 150 | 0.254 1.0] 1.0A 250M | T 2N3633 | S|N HNS 0.3W] A | 200 15 |] 6.0]0]} 50] 150 10M |] 0.21} 3.0M 1.3G|T 2N3634 | S| P 8-249] VID 1.0W A | 200] 140 | 140],0] 50] 150 50M 40]/E |] 150M] T 2N3635 | S| P 8-249) VID 1.0W A | 200 | 140 | 140] 0 | 100 | 300 50M 80}E | 200M|T 2N3636 | S| P 8-249} VID 1.0W) A {200 | 175 | 175]/0] 50] 150 50M 40 | E | 150M] T 2N3637 |S] P 8-249] VID 1.0W) A | 200] 175 | 175 | 0 | 100 | 300 50M 80]/E | 200M|T 2N3638 S| P HSs 0.3m A ) 125 25 25 )0 30 50M 0.25 50M 25)E 100M | T 2N3638A | S| P HSS O.3W) A | 125 25 25 ]0) 100 50M 0.25 50M LOOITE 150M; T 2N3639 | S| P| MPpS3639 | 5-90 | HSS 0.2 A $125) 6.0] 6.0/0] 30] 120 10M | 0.16 10M 500M | T 2N3640 | S| P| MPS3640{ 5-93 | HSS 0.20 A | 125 12 12} 0] 30] 120 10M 0.2 10M 500M | T 2N3641 [| S| N] MPS6530 | 5-118) HPA] 0.35 A | 125 60 30] 0] 40] 120]0.15A |] 0.22] 0.154 250M | T 2N3642 | S| N|MPS6530 | 5-118) HPA) 0.35) A | 125 60 45170] 40} 120) 0.15A | 0.22] 0.154 250M | T 2N3643 S| N |] MPS6531 5-118] HPA 0.35 A] 125 60 30 | 0 | 100 | 300 | 0,15A 0,22] 0.15A 250M | T 2N3644 S}P HSss O.3W A 7125 45 45} 0 ]115 | 300 50M 0.25 50M 200M | T 2N3645 S| P HSS O.3W A | 125 60 60 | 0 | 115 | 300 50M 0.25 50M 200M |] T 2N3646 S| N | MPS3645 5-95 HSS O.2W) A | 125 40 15 | 0 30 | 120 30M 0.2 30M 350M | T 2N3647 S| N 8-243 | HSS 0.4 A | 200 40 101, 0 25 | 150 | 0.154 0.25 10M 2045 350M | T 2N3548 SiN 8-243] HSS 0.4] A | 200 40 1570 30 | 120] 0.15A 0.25 10M 20]; E 450M | T 2N3649 thru Thyristors, see Table on Page 1-154 2N3658 2N3659 S|N VID 4.0] Cc | 200 220 170 {0 20 LOM 20) E 50M | T 2N3660 S| P HPA 5.0 C | 200 40 30}, 0 25 | 100 0.5A 1.2 0.5A 25M, T 2N3661 S| P HPA ow c | 200 60 50] 0 25 | 100 0.54 1.2 0.54 25M{T 2N3662 S|N RFC O.2W) A | 125 18 12) 0 20 8.0M 700M | T 2N3663 | S| N RFC 0,20) A | 125 30 12} 0] 20 8.0M 700M | T 2N3664 S| N 9-80 HPA 5.O0W) Cc | 200 60 60] S | 8.0 80 50M 0.75] 0.254 300M | T 2N3665 sj) N MNS 5.0) C } 260 120 807 0 40) 120] 0.15A 0.5) 0.154 60M | T 2N3666 S| N MNS 5.0W) C | 200 120 80 | 0 | 100 | 300 | 0.154 0.5] 0.154 60Mj T 2N3667 | S| N PMS LL7WeC | 200 50 50]/O}f 157 60] 8.0A 1.5] 8.04 O.5M] T 2N3668 thru Thyristors, see Table on Page 1-154 2N3670 2N3671 S| P HSS 0.6 A | 200 60 50] 0 75 | 225] 0.154 0.4] 0.154 200M | T 2N3672 Ss} P HSS 0.4W A | 200 60 50] 0 75 | 225} 0,154 0.4] 0.154 200M | T 2N3673 S| P HSS 0.35%) A | 200 60 50] 0 75 | 225 | 0.154 0.4] 0.154 200M | T 1-141WWI XX '/Wwr~w isi BCB}OH, CBCj})(@iCiiC SS K'""'w;')WwWNQDQ))Ww& w Power Transistors GERMANIUM PNP POWER TRANSISTOR SELECTOR GUIDE -3-AMP HIGH-FREQUENCY DRIVER hee Ves) 30V | 45v | 6ov | 75v | 90v te = O.5 A, \ LOW eto - Ver = 2 Vos 30V 45V 60V 75V 90V foe ne Gob, 30-60 2N2137| 2N2138 | 2N2139| 2N2140| 2N2141 10.3 7 yo-a1t@ 50-100 2N2142 | 2N2143|2N2144 | 2N2145 | 2N2146 -3-AMP 3 GENERAL: PURPOSE te, [Nes } aov | cov | 75v | 100v Po = 106 W LIFIER Va=4V | Ves ) 50v | 80v | 100v | 120V fy = 0.35 MHz Gas 35.90 2N1359| 2N375 |2N1362 | 2N1364 Toa 60-140 2N1360| 2N618 |2N1363 |2N1365 p 5-AMP ~cENERAL-PURPOSE be, [Ves] 30v | a5v | cov | 75v | 90V ps = t06w SWITCH AND AMPLIFIER Ve=2 [Vc J 40V_ | 60v_| gov | 100v | 120V ~ 20-40 1.0.35 MHz 2N1529 | 2N1530 | 2N1531 | 2N1532| 2N1533 35-70 ae, Ge ose wz 2N1534 | 2N1535 | 2N1536 | 2N1537| 2N1538 103 T0410 50-100 2N1539 | 2N1540 | 2N154] | 2N1542 | 2N1543 f; - 0.4 MHz 75-150 hos Miz 2N1544 |2N1545 | 2N1546 | 2N1547 | 2N1548 Pr S-AMP ich oc GAIN Ire Voss} 30 45V 60V LOW-SATURATION SWITCH lea 3A, Pp = 170W . Ve=2V | Vee} 30 45V 60V fy 0.3 MHz Fives 60-120 2N3311 2N3312 2N3313 100-200 2N3314 2N3315 2N3316 ~ 7-AMP TciGain AUDIO hee AMPLIFIER le=14, | Vets 50V P= 106 W | Vor = 2 f; 0.32 MHz ars i 74-250 MP110 - 7-AMP ECONOMY LINE AMPLIFIER ty, [Vos} sov | sv | cov | 75v Va=2 | Ves } 40V 60V | 80V | 100V Po = 77W fy 0.6 MHz 30-60 2N3615 | 2N3616 Ges yes 35-70 2N3611| 2N3612 703 TO4ITO 45-90 2N3617 | 2N3618 60-120 2N3613 | 2N3614 -7-AMP ECONOMY LINE AMPLIFIER he Ves) gov | asv | cov | 75v le=3A, Po=77W Gs Ve=2 | Vo } 40v | 6ov | 75V | 90V f; 0.6 MHz 709 30-200 MP2060|MP2061| MP2062| MP20632N361 1 thru 2N3614 (GERMANIUM) CASE 11,16 (TO-3, 41) For units with solder lugs attached, specify devices MP361) etc. (T0-41 package) MAXIMUM RATINGS Power Transistors - Ilk=7A Pp =77W Ver = 40-60 V PNP germanium power transistors for switching and amplifier applications. Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) The Safe Operating Area Curves indicate To-Ver limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector-emitter short. (Case tempera- ture and duty cycle of the excursions make no signifi- cant change in these safe areas.) The load line may exceed the BVozg voltage limit only if the collector Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) current has been reduced to 20 mA or less before or at the BVoyg limit; then and only then may the load line be extended to the absolute maximum voltage rat- ing of BVy,0. To insure operation below the maximum T,, the power-temperature derating curve must be ob- served for both steady state and pulse power condi- tions. 7-118 : 2N3611 |2N3612 Unit Rating Symbol |5y3613 |2N3614 Collector-Emitter Voltage Vcrs 30 45 Vdc Collector-Emitter Voltage (Open Base) VcEo 25 35 Vde Collector-Base Voltage VcB 40 60 Vdc Emitter-Base Voltage Vip 20 30 Vdc Collector Current (Continuous) Ic 7 Ade Peak Collector Current (PW <5 msec) Ic 15 Adc Base Current (Continuous) Ip 2 Adc 5 Storage Temperature Range Tstg -65 to +110 c Operating Case Temperature Range Te -65 to +110 9% Total Device Dissipation @ Tg = 25C Pr 77 Watts Derate above Ta = 25C 1 w/c Thermal Resistance, Junction to Case 6gC 1.1 C/w | Thermal Resistance, Case to Ambient OCA 32.7 C/w SAFE OPERATING AREAS 2N3611 and 2N3613 2N3612 and 2N3614 20 20 5 b 50 js. 10 10 7 5 5 = 3 g 3 a = 2 2 15 315 PS EXPANDED Ps EXPANDED = i LOW CURRENT AREA El LOW CURRENT AREA 3 07 SEE, NOTE 30 SEE NOTE 5 8 = 05 ~ SAFE - SAFE AREA AREA 8 leao LIMIT i 8 loro LIMIT oma 02 o 92 }+-\9 i 0.15 0.15 01 0.1 Q 5 10 15 20 25 30 0 5 0 6 0 2% 3 3 40 4Power Transistors 2N3611 thru 2N3614 (continued) ELECTRICAL CHARACTERISTICS Characteristics Symbot Min Max Unit Collector-Emitter Breakdown Voltage* BVors* Vde (lg = 250 mAdc) 2N3611, 2N3613 30 - 2N3612, 2N3614 45 - Collector-Emitter Breakdown Voltage* BVoro* Vdc (lg = 500 mAdc) 2N3611, 2N3613 25 - 2N3612, 2N3614 35 - Floating Potential Vv. Vde EBF Yop = Voz max) - 1.0 Collector-Emitter Leakage Current loEo mAdc (Vog = 1/2 Vag max) - 30 Collector-Emitter Leakage Current lorx mAdc Vor Fa Vor max, Vor = 1.0 Vdc, Te = +100C) _ 10 Collector -Base Cutoff Current / logo mAdc (V4 = 2 Vde) - - 040 cB (Veg = 25 Vde) 2N3611, 2N3613 - 0.5 Vop = 40 Vdc) 2N3612, 2N3614 - 0.5 Vog = Yop max) - 5.0 Emitter-Base Cutoff Current IBo uwAdo (ep = Ves max) - 500 = - 10 (Vip 12 Vdc) 10 Collector-Emitter Saturation Voltage Vor(sat) Vde fly = 3 Adc, Ip = 300 mAdc) - 9.25 (Ip = 7 Adc, B = 700 mAdc) - 0.35 Base-Emitter Saturation Voltage Vex(s at) Vde Ul, = 3 Ade, In = 300 mAdc) 2N3611, 2N3612 - 0.7 2N3613, 2N3614 - 0.6 (lg = 7 Adc, b = 700.mAdc) 2N3611, 2N3612 - 1.1 2N3613, 2N3614 - 0.93 Transconductance ere mhos lg = 3 Adc, Vor = 2 Vdc) 2N3611, 2N3612 3.0 - 2N3613, 2N3614 3.5 - Small Signal Current Gain Ne - Go =0.5A, Vop = l2 V, 1 = 20 kHz ) 15 - lp = 0.5 A, Vor =2V, f=1kHz) 2N3611, 2N3612 40 100 2N3613, 2N36%4 60 150 DC Current Gain hop - lg = 3 Adc, Vor = 2 Vdc) 2N3611, 2N3612 35 70 2N3613, 2N3614 60 120 ( = 7 Adc, Vor = 2 Vdc) 2N3611, 2N3612 20 - 2N3613, 2N3614 30 ~ *Sweep Test: 1/2 sine wave, 60 Hz POWER-TEMPERATURE DERATING CURVE @t, @le 5 100 1 a 60 2 4 1 2 0 0 These transistors are also subject to safe area curves. Both limits are applicable and must be observed. Po, POWER DISSIPATION (WATTS) 0 25 50 15 100110 125 TEMPERATURE (C) 7-119Power Transistors 2N3611 thru 2N3614 (continued) COLLECTOR CURRENT versus BASE-EMITTER VOLTAGE 10 TYPICAL SWITCHING TIMES 5.0 5 3.0 4 LZ" = 20 ps _ 4 = t ~M ns 's 3 . = Ty = +100C /4.25C 40C 3 10 g ES 2 = a = sa 2 LL Le 8 S a & 03 02 bay = In == Ie / 10 Ol 1 0 0.2 0.4 0.6 08 1.0 03 05 07 10 2.0 3.0 5.0 6.0 Vee, BASE-EMITTER VOLTAGE (VOLTS) Ic, COLLECTOR CURRENT (AMP) DC CURRENT GAIN versus COLLECTOR CURRENT 200 Vee=2V = 150 & Ty = 100C h lc = leso = FE == lieth oz 8 CBO & 100 , 2 25C wa = 50 40C Q 010 030 050 01 03 05 10 3.0 5.0 Ic, COLLECTOR CURRENT (AMP) _ COLLECTOR-EMITTER SATURATION VOLTAGE VAR:ATIONS wn s 0.5 T \ T & N wy = \ ao \ ! \ \. = N \ \ K -_ BCT, s SN ' \ x. - 100C a ! NS ot = M Vv T wv 3 Ni WN oR E \ . ee jet 5 2 = = tT 4 I 7A a ~ ~4o c= 2 Soy 3 Ps Psa Tato Q 01 S| C-E = ==. | = = = == ey lo 3A 2. ) "Ars S= FS lc=lA 2 x 0 = 5 7 10 20 30 50 70 100 200 300 500 700 1000 2000 tp, BASE CURRENT (mA) 7-120