Document Number: 91213 www.vishay.com
S09-0006-Rev. A, 19-Jan-09 1
Power MOSFET
IRFP254N, SiHFP254N
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
these Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V.
c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 250
RDS(on) (Ω)V
GS = 10 V 0.125
Qg (Max.) (nC) 100
Qgs (nC) 17
Qgd (nC) 44
Configuration Single
N-Channel MOSFET
G
D
S
TO-247
GD
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-247
Lead (Pb)-free IRFP254NPbF
SiHFP254N-E3
SnPb IRFP254N
SiHFP254N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
23
A
TC = 100 °C 16
Pulsed Drain CurrentaIDM 92
Linear Derating Factor 1.5 W/°C
Single Pulse Avalanche EnergybEAS 300 mJ
Repetitive Avalanche CurrentaIAR 14 A
Repetitive Avalanche EnergyaEAR 22 mJ
Maximum Power Dissipation TC = 25 °C PD220 W
Peak Diode Recovery dV/dtcdV/dt 7.4 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91213
2S09-0006-Rev. A, 19-Jan-09
IRFP254N, SiHFP254N
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -40
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 -
Maximum Junction-to-Case (Drain) RthJC -0.68
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 250 V, VGS = 0 V - - 25 µA
VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 14 Ab- - 0.125 Ω
Forward Transconductance gfs VDS = 25 V, ID = 14 A 15 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 2040 -
pFOutput Capacitance Coss - 260 -
Reverse Transfer Capacitance Crss -62-
Total Gate Charge Qg
VGS = 10 V
ID = 14 A, VDS = 200 V,
see fig. 6 and 13b
- - 100
nC
Gate-Source Charge Qgs --17
Gate-Drain Charge Qgd --
44
Turn-On Delay Time td(on)
VDD = 125 V, ID = 14 A,
RG = 3.6 Ω, see fig. 10b
-14-
ns
Rise Time tr -34-
Turn-Off Delay Time td(off) -37-
Fall Time tf -29-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0-
nH
Internal Source Inductance LS-13-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--23
A
Pulsed Diode Forward CurrentaISM --92
Body Diode Voltage VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb--1.3V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μs- 210 310 ns
Body Diode Reverse Recovery Charge Qrr -1.72.6nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
Document Number: 91213 www.vishay.com
S09-0006-Rev. A, 19-Jan-09 3
IRFP254N, SiHFP254N
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
0.1 110 100
0.1
1
10
100 VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
To p
Bottom
4.5 V
20 µs PULSE WIDTH
TJ = 25 °C
ID, Drain-to-Source Current (A)
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1 10 100
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
To p
Bottom
4.5 V
20 µs PULSE WIDTH
TJ = 175 °C
TJ = 25 °C
TJ = 175 °C
5.0
4.0 7.0
6.0 8.0 9.0
1
10
100
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
VDS = 50 V
20 µs PULSE WIDTH
ID = 23 A
VGS = 10 V
TJ, Junction Temperature ( °C)
rDS(on), Drain-to-Source On Resistance (Normalized)
20 40 60 80 100 120 140 160
0.0
1.0
2.0
3.0
-60 -40 -20 0
4.0
www.vishay.com Document Number: 91213
4S09-0006-Rev. A, 19-Jan-09
IRFP254N, SiHFP254N
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Crss
Coss
Ciss
110 100 1000
0
1000
2000
3000
4000
C, Capacitance (pF)
VDS, Drain-to-Source Voltage (V)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
020
40 60 80 100
0
4
8
12
16
20
QG, Total Gate Charge (nC)
VGS, Gate-to-Source Voltage (V)
ID = 14 A
VDS = 200 V
VDS = 125 V
VDS = 50 V
For Test Circuit
See Fig. 13
VSD, Source-to-Drain Voltage (V)
ISD, Reverse Drain Current (A)
TJ = 175 °C
TJ = 25 °C
VGS = 0 V
100
0.4 0.8
0.6 1.0 1.2
0.1
1
10
0.2
10 100 1000 10000
0.1
10
1000
1
ID, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
OPERATING IN THIS AREA LIMITED
BY RDS(on)
10 ms
1 ms
100 µs
TC = 25 °C
TJ = 175 °C
Single Pulse
100
1
Document Number: 91213 www.vishay.com
S09-0006-Rev. A, 19-Jan-09 5
IRFP254N, SiHFP254N
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
TC, Case Temperature (°C)
ID, Drain Current (A)
25 50 75 100 125 150
0
5
10
15
20
25
175
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
t 1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
0.01
0.02
0.05
0.10
0.20
D = 0.50
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
PDM
www.vishay.com Document Number: 91213
6S09-0006-Rev. A, 19-Jan-09
IRFP254N, SiHFP254N
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test
A
R
G
I
AS
0.01
Ω
t
p
D.U.T.
L
VDS
+
-V
DD
Driver
A
15 V
VGS
IAS
VDS
tp
25
400
300
200
100
0150
125
100
75
50
ID
TOP 5.6 A
9.8 A
BOTTOM 14 A
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
500
600
175
QGS QGD
QG
V
G
Charge
VGS
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91213 www.vishay.com
S09-0006-Rev. A, 19-Jan-09 7
IRFP254N, SiHFP254N
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.c om/ppg?91213.
P.W.Period
dI/dt
Diode recovery
dV/dt
Ripple ≤5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V*
V
DD
I
SD
Driver gate drive
D.U.T. I
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D = P. W.
Period
+
-
+
+
+
-
-
-
* VGS = 5 V for logic level devices and 3 V drive devices
Peak Diode Recovery dV/dt Test Circuit
RG
VDD
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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