PT60QHx45
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APPLICATIONS
●Pulse Power
●Crowbars
●Ignitron Replacement
FEATURES
●Double Side Cooling
●Fast Turn-on
●Low Turn-on Losses
VOLTAGE RATINGS
KEY PARAMETERS
VDRM 4500V
IT(AV) 1000A
ITSM 22500A
dI/dt 10,000A/µs
Outline type code: H.
See Package Details for further information.
PT60QHx45
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms
Lower voltage grades available.
Type Number Repetitive Peak
Voltages
VDRM /VRRM
V
CURRENT RATINGS
Symbol Parameter Conditions
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
UnitsMax.
Half wave resistive load, Tcase = 80oC 1000 A
Tcase = 80oC 1570 A
4500/16
Fig.1 Package outline
PT60QHx45
Pulse Power Thyristor Switch
Preliminary Information
Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000
PT60QHx45
2/6
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h) 0.003
Double side -oC/W
SURGE RATINGS
Conditions
10ms half sine; Tcase = 125oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
VR = 0
Max. Units
Symbol Parameter
ITSM Surge (non-repetitive) on-state current
I2tI
2
t for fusing
ITSM Surge (non-repetitive) on-state current
I2tI2t for fusing 2.52 x 106A2s
22.5 kA
15.8 x 106A2s
17.8 kA
THERMAL AND MECHANICAL DATA
dc
Conditions Min. Max. Units
125 oC
Tvj Virtual junction temperature
Tstg Storage temperature range
Reverse (blocking)
-
Thermal resistance - junction to case
Rth(j-c)
Symbol Parameter
Clamping force 18 22 kN
–55 125 oC
-
On-state (conducting) - 135 oC
Double side cooled - 0.013 oC/W
DYNAMIC CHARACTERISTICS
ParameterSymbol Conditions Typ. Max. Units
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC
From 67% VDRM to 40kA
Gate source 60A
tr = 1.5µs to 1A, Tj = 25oC
dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Rgk ≤ 1.5Ω
- 100 mA
- 175 V/µs
Non-repetitive - 10000 A/µs
Rate of rise of on-state current
dI/dt
VT(TO) Threshold voltage At Tvj = 125oC
rTOn-state slope resistance At Tvj = 125oC
1.5-V
- 0.67 mΩ
GATE TRIGGER CHARACTERISTICS AND RATINGS
VDRM = 5V, Tcase = 25oC
ConditionsParameterSymbol
VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC
IGT Gate trigger current
1.0 V
3A
Max. Units
-
-
Typ.
PT60QHx45
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CURVES
Fig.2 Maximum (limit) on-state characteristics
ORDERING INFORMATION
PT Pulse Power Thyristor
40Q Device type
P Package outline type code
x lead length (see table, right)
45 Voltage x100
Lead length (x)
O
C
D
E
F
G
H
J
K
L
No lead
8"
10"
12"
16"
18"
20"
24"
30"
40"
200mm
250mm
300mm
400mm
450mm
500mm
600mm
750mm
1000mm
1.0 2.0 3.0 4.0 5.0
Instantaneous on-state voltage, VT - (V)
0
1000
2000
3000
4000
5000 Measured under pulse conditions
Instantaneous on-state current, IT - (A)
1
2
1: Tj = 25˚C Max
2: Tj = 125˚C Max
PT60QHx45
4/6
1010.10.010.001 Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (˚C/W)
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
Double side cooled
100
Fig.3 Maximum (limit) transient thermal impedance - junction to case
PT60QHx45
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Package Details
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
26 ± 0.5
52
55
9.6
15˚
Cathode Aux. Tube
Gate Tube
Cathode
Anode
Ø62.85
Ø100
Ø62.85
Nominal weight: 820g
Clamping force: 20kN ±10%
Package outine type code: H
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
