TLP521-1,TLP521-2,TLP521-4 TOSHIBA Photocoupler IRED & Photo-Transistor TLP521-1, TLP521-2, TLP521-4 Unit: mm Programmable Controllers AC/DC-Input Module Solid State Relay The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to an infrared emitting diode. The TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package. TOSHIBA * Collector-emitter voltage: 55 V (min) * Current transfer ratio: 50 % (min) * Isolation voltage: 2500 Vrms (min) * UL-recognized: UL 1577, File No.E67349 * cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 11-5B2 Weight: 0.26 g (typ.) Rank GB: 100 % (min) TOSHIBA 11-10C4 Weight: 0.54 g (typ.) TOSHIBA 11-20A3 Weight: 1.1 g (typ.) Start of commercial production 1979-05 (c) 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP521-1,TLP521-2,TLP521-4 Pin Configurations (top view) TLP521-1 TLP521-2 TLP521-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector 1, 3, 5, 7 : Anode 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector (c) 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP521-1,TLP521-2,TLP521-4 Absolute Maximum Ratings (Ta = 25C) Rating Characteristics Symbol TLP521-1 TLP521-2 TLP521-4 Unit IF 70 50 mA Forward current derating IF/C -0.93 (Ta 50C) -0.5 (Ta 25C) mA/C Pulse forward current (100 s pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 150 100 mW PD/C -2.0 (Ta 50C) -1.0 (Ta 25C) mW/C LED Forward current Diode power dissipation derating Tj 125 C Collector-emitter voltage VCEO 55 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 100 mW PC/C -1.0 mW/C Tj 125 C Storage temperature range Tstg -55 to 125 C Operating temperature range Topr -55 to 100 C Lead soldering temperature (10 s) Tsol 260 C Total package power dissipation (1 circuit) PT 250 150 mW Total package power dissipation derating (1 circuit) (Ta 25C) PT/C -2.5 -1.5 mW/C Detector Junction temperature Collector power dissipation derating (1 circuit) (Ta 25C) Junction temperature Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) 2500 BVS Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VCC 5 24 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. (c) 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP521-1,TLP521-2,TLP521-4 Current transfer ratio Type TLP521-1 TLP521-2 TLP521-4 Classification (Note 1) Current Transfer Ratio (%) (IC/IF) Marking Of Classification IF = 5mA, VCE = 5V, Ta = 25C Min Max Blank 50 600 Blank, Y, YE, G, G, GR, B, BL, GB Rank Y 50 150 YE, Y Rank GR 100 300 GR, G, G Rank BL 200 600 BL, B Rank GB 100 600 GB, GR, G, G, BL, B Rank YH 75 150 Y Rank GRL 100 200 G Rank GRH 150 300 G Rank BLL 200 600 B Blank 50 600 Blank, GR, BL, GB Rank GB 100 600 GB, GR, BL Rank GR 100 300 GR Rank BL 200 600 BL Blank 50 600 Blank, GB Rank GB 100 600 GB Note 1: Ex. rank GB: TLP521-1 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2 (c) 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-24 TLP521-1,TLP521-2,TLP521-4 Electrical Characteristics (Ta = 25C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V -- -- 10 A Capacitance CT V = 0 V, f = 1 MHz -- 30 -- pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 -- -- V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 -- -- V VCE = 24 V -- 10 100 nA VCE = 24 V, Ta = 85 C -- 2 50 A V = 0 V, f = 1 MHz -- 10 -- pF Min Typ. Max Unit 50 -- 600 100 -- 600 -- 60 -- 30 -- -- IC = 2.4 mA, IF = 8 mA -- -- 0.4 IC = 0.2 mA, IF = 1 mA -- 0.2 -- -- -- 0.4 Min Typ. Max Unit -- 0.8 -- pF 5x1010 1014 -- 2500 -- -- Vrms Collector dark current ICEO Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25C) Characteristics Symbol Current transfer ratio Saturated CTR Collector-emitter saturation voltage IC/IF IC/IF(sat) VCE(sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB % % V Isolation Characteristics (Ta = 25C) Characteristics Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. 60 % Isolation voltage (c) 2019 Toshiba Electronic Devices & Storage Corporation BVS AC, 60 s 5 2019-06-24 TLP521-1,TLP521-2,TLP521-4 Switching Characteristics (Ta = 25C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Test Condition Min Typ. Max -- 2 -- -- 3 -- -- 3 -- -- 3 -- -- 2 -- -- 15 -- -- 25 -- VCC = 10 V IC = 2 mA RL = 100 RL = 1.9 k VCC = 5 V, IF = 16 mA (Fig.1) Unit s s Fig.1 : SWITCHING TIME TEST CIRCUIT IF RL VCC VCE (c) 2019 Toshiba Electronic Devices & Storage Corporation IF tS VCE 4.5V 0.5V tON tOFF 6 VCC 2019-06-24 TLP521-1,TLP521-2,TLP521-4 IF - Ta TLP521-1 100 80 Allowable forward current IF (mA) Allowable forward current IF (mA) 100 60 40 20 0 -20 0 20 40 60 80 TLP521-2 TLP521-4 80 60 40 20 0 -20 100 0 Ambient temperature Ta (C) 240 120 Allowable collector power dissipation PC (mW) 160 120 80 0 -20 TLP521-2 TLP521-4 100 80 100 PC - Ta 60 40 0 20 40 60 80 0 -20 100 0 TLP521-1 IFP - DR 3000 Pulse width 100s Allowable pulse forward current IFP (mA) 500 300 100 50 30 10-2 40 60 TLP521-2 TLP521-4 IFP - DR Pulse width 100s Ta = 25C 1000 10-3 20 Ambient temperature Ta (C) Ta = 25C Allowable pulse forward current IFP (mA) 80 80 Ambient temperature Ta (C) 10 60 20 40 3000 40 100 200 Allowable collector power dissipation PC (mW) 20 Ambient temperature Ta (C) PC - Ta TLP521-1 IF - Ta 10-1 1000 500 300 100 50 30 10 100 Duty cycle ratio DR 10-3 10-2 10-1 100 Duty cycle ratio DR NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-24 TLP521-1,TLP521-2,TLP521-4 100 VF/Ta - IF IF - VF Ta=25C -2.8 Forward voltage temperature coefficient VF/Ta (mV/C) Forward current IF (mA) 50 30 10 5 3 1 0.5 0.1 0.4 0.8 0.6 1.0 Forward voltage 50 VF -1.2 0.3 (V) IFP - VFP 10 5 3 0.4 0.8 1.2 1.6 2.0 10-1 10-2 10-3 10-4 0 2.4 (mA) (mA) 15mA PC(MAX.) 10mA IF=5mA 4 Ta=25C 40mA 30mA 20 20mA 15 10mA 10 5mA IC Collector current 30mA 20mA 2 50mA 25 50mA 0 160 120 IC - VCE 60 IC Collector current 80 40 Ambient temperature Ta (C) Ta=25C 20 IF (mA) 10V 5V VCE=24V 100 IC - VCE 40 30 10 1 Pulse forward voltage VFP (V) 80 3 ICEO - Ta Pulse width 10s 10 0 1 Forward current 30 1 0 -1.6 -0.4 0.1 1.6 Collector dark current ICEO (A) IFP Pulse forward current (mA) 1.4 1.2 500 Repetitive frequency =100Hz 300 Ta = 25C 100 -2.0 -0.8 0.3 1000 -2.4 8 6 Collector-emitter voltage VCE 5 0 0 10 (V) IF=2mA 0.2 0.4 0.6 0.8 Collector-emitter voltage 1.0 VCE 1.2 1.4 (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-24 TLP521-1,TLP521-2,TLP521-4 IC - IF 100 300 Collector current Current transfer ratio IC /IF (%) IC (mA) 30 10 Sample IC/IF - IF 500 Ta = 25C VCE=5V 50 VCE=0.4V A 5 3 Sample B Sample 100 Sample 30 Ta = 25C VCE=5V VCE=0.4V 5 0.3 1 0.5 0.3 0.20 Collector-emitter saturation voltage VCE(sat) (V) 0.1 0.05 1 3 10 Forward current IF 30 100 (mA) VCE = 5V 25mA VCE(sat) - Ta 0.08 0.04 10mA -20 0 300 (s) 1mA IF = 0.5mA 80 100 Ta = 25C IF = 16mA VCC= 5V 100 tS 50 30 10 tON 3 20 60 5 0.3 0 40 tOFF 3 -20 20 Switching Time - RL 5mA Switching time IC (mA) Collector current 500 5 0.1 100 0.12 1000 50 0.5 30 (mA) IF = 5mA IC = 1mA IC - Ta 1 10 IF Ambient temperature Ta (C) 100 10 3 Forward current 0.16 0 30 B 50 10 1 0.03 0.3 A 40 60 80 1 1 100 3 10 100 30 300 Load resistance RL (k) Ambient temperature Ta (C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-24 TLP521-1,TLP521-2,TLP521-4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". * TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ (c) 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-06-24