MAXIMUM RATINGS: (TC=25°C) SYMBOL BD135 BD137 BD139 UNITS
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.5 A
Peak Collector Current ICM 2.0 A
Continuous Base Current IB 0.5 A
Peak Base Current IBM 1.0 A
Power Dissipation (Tmb≤70°C) PD 8.0 W
Power Dissipation (TA=25°C) PD 1.25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJmb 10 °C/W
Thermal Resistance ΘJA 100 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=30V 100 nA
ICBO VCB=30V, TC=125°C 10 µA
IEBO VEB=5.0V 100 nA
BVCEO IC=30mA (BD135) 45 V
BVCEO IC=30mA (BD137) 60 V
BVCEO IC=30mA (BD139) 80 V
VCE(SAT) IC=500mA, IB=50mA 0.5 V
VBE(ON) VCE=2.0V, IC=500mA 1.0 V
hFE VCE=2.0V, IC=5.0mA 40
hFE VCE=2.0V, IC=150mA 63 250
hFE VCE=2.0V, IC=500mA 25
fT VCE=5.0V, IC=50mA, f=100MHz 190 MHz
BD135-10 BD135-16
BD137-10 BD137-16
BD139-10 BD139-16
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE VCE=2.0V, IC=500mA 63 160 100 250
BD135
BD137
BD139
NPN SILICON TRANSISTOR
TO-126 CASE
Central
Semiconductor Corp.
TM
R3 (18-September 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-126 CASE - MECHANICAL OUTLINE
BD135
BD137
BD139
NPN SILICON TRANSISTOR
R3 (18-September 2009)
LEAD CODE:
1) Emitter
2) Collector
3) Base
Mounting Pad is
Common to Pin 2
MARKING:
FULL PART NUMBER
