SILICON PLASTIC POWER TRANSISTOR
NPN 2SD880Y
3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: VCEO=60V
F DC Current Gain: 20 @ IC=3A
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 60 Vdc
Collector – Base Voltage V CB 60 Vdc
Emitter Base Voltage V EB 7 Vdc
Collector Current – Continuos I C3 Adc
Base Current I B0.3 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 30
0.24 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 4.16 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Breakdown Voltage
[ Ic =50 mAdc, IB = 0 ] V
CEO(sus)
60 Vdc
Collector Cutoff Current
[ VCB = 60 Vdc, IB = 0 ] ICB0 100 µAdc
Collector–Base Breakdown Voltage
[ Ic =1mAdc, IE = 0 ] BVCBO 60 Vdc
Emitter Cutoff Current
[VEB=7Vdc, IC=0] IEBO 100 µAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 0.5 Adc , VCE = 5.0 Vdc ]
[ Ic =3 Adc , VCE =5.0 Vdc ]
hFE 100
20 200
Collector-Emitter Saturation Voltage
[ Ic = 3Adc , IB = 0.3Adc ) VCE(sat) 1 Vdc
Emitter–Base Saturation Voltage
[ Ic =0.5Adc, VCE =5V ] VBE(ON)
1Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,V
CE=5Vdc,ftest=1.0 MHz ]
fT3 MHz
Collector Output Capacitance
VCB=10V,IE=0,f=1MHz COB 70 pF
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
