MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
1 Feb. 2011
CM150DX-24S - 6th Generation NX series -
Collector current IC .............…............… 150A
Collector-emitter voltage VCES ...........…
1200V
Maximum junction temperature Tjmax ... 175°C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
Dual (Half-Bridge) ●UL Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm
TERMINAL SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
t=0.8
The tolerance of size between
terminals is assumed to be ±0.4.
E2
(47)
Es1
(16)
Di1
Di2
Tr1
G1
(15)
Cs1
(22)
G2
(38)
Es2
(39)
Th
TH1
(1)
TH2
(2)
Tr2
C1
(48)
C2E1
(24)
C2E1
(23)
NTC
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
2 Feb. 2011
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol Item Conditions Rating Unit
VCES Collector-emitter voltage G-E short-circuited 1200 V
VGES Gate-emitter voltage C-E short-circuited ±20 V
IC DC, TC=120 °C (Note.2) 150
ICRM Collector current Pulse, Repetitive (Note.3) 300
A
Ptot Total power dissipation TC=25 °C (Note.2, 4) 1150 W
IE (Note.1) TC=25 °C (Note.2, 4) 150
IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 300
A
MODULE
Symbol Item Conditions Rating Unit
Tjmax Maximum junction temperature - 175
TCmax Maximum case temperature (Note.2) 125
°C
Tjop Operating junction temperature - -40 ~ +150
Tstg Storage temperature - -40 ~ +125 °C
Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA
IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA
VGE(th) Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V
Tj=25 °C - 1.80 2.25
Tj=125 °C - 2.00 -
VCEsat
(Terminal) Collector-emitter saturation voltage
IC=150 A (Note.5) ,
VGE=15 V Tj=150 °C - 2.05 -
V
Tj=25 °C - 1.70 2.15
Tj=125 °C - 1.90 -
VCEsat
(Chip) Collector-emitter saturation voltage
IC=150 A (Note.5) ,
VGE=15 V Tj=150 °C - 1.95 -
V
Cies Input capacitance - - 15
Coes Output capacitance - - 3.0
Cres Reverse transfer capacitance
VCE=10 V, G-E short-circuited
- - 0.25
nF
QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 350 - nC
td(on) Turn-on delay time - - 800
tr Rise time VCC=600 V, IC=150 A, VGE=±15 V, - - 200
td(off) Turn-off delay time - - 600
tf Fall time RG=0 Ω, Inductive load - - 300
ns
Tj=25 °C - 1.8 2.25
Tj=125 °C - 1.8 -
VEC (Note.1)
(Terminal) Emitter-collector voltage
IE=150 A (Note.5) ,
G-E short-circuited Tj=150 °C - 1.8 -
V
Tj=25 °C - 1.7 2.15
Tj=125 °C - 1.7 -
VEC (Note.1)
(Chip) Emitter-collector voltage
IE=150 A (Note.5) ,
G-E short-circuited Tj=150 °C - 1.7 -
V
trr (Note.1) Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns
Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 -
Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 16.0 -
Err (Note.1) Reverse recovery energy per pulse Inductive load - 12.2 -
mJ
Main terminals-chip, per switch,
RCC'+EE' Internal lead resistance TC=25 °C (Note.2) - - 1.8 mΩ
rg Internal gate resistance Per switch - 13 - Ω
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
3 Feb. 2011
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
R25 Zero-power resistance TC=25 °C (Note.2) 4.85 5.00 5.15 kΩ
ΔR/R Deviation of resistance TC=100 °C, R100=493 Ω -7.3 - +7.8 %
B(25/50) B-constant Approximate by equation (Note.6) - 3375 - K
P25 Power dissipation TC=25 °C (Note.2) - - 10 mW
THERMAL RESISTANCE CHARACTERISTICS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
Rth(j-c)Q Junction to case, per IGBT - - 0.13 K/W
Rth(j-c)D Thermal resistance (Note.2) Junction to case, per FWDi - - 0.23 K/W
Case to heat sink, per 1 module,
Rth(c-s) Contact thermal resistance (Note.2) Thermal grease applied (Note.7) - 15 - K/kW
MECHANICAL CHARACTERISTICS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
Mt Main terminals M 6 screw 3.5 4.0 4.5
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
Terminal to terminal 11.55 - -
ds Creepage distance Terminal to base plate 12.32 - - mm
Terminal to terminal 10.00 - -
da Clearance Terminal to base plate 10.85 - - mm
m Weight - - 350 - g
ec Flatness of base plate On the centerline X, Y (Note.8) ±0 - +100 μm
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) and heat sink temperature (T s) are defined on the each surface (mounting side) of base plate
and heat sink just under the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed T jmax rating.
Note.4: Junction temperature (T j) should not increase beyond T jmax rating.
Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit for VCEsat, VEC.
Note.6: )
TT
/()
R
R
ln(B )/( 502550
25
5025 11
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,
"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"
Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
4 Feb. 2011
RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V
VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V
RG External gate resistance Per switch 0 - 30 Ω
CHIP LOCATION (top view) Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip.
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
5 Feb. 2011
TEST CIRCUIT AND WAVEFORMS
IC
23/24
47
39
38
16
15
V
Short-
circuited
48
VGE=15 V
22
IC
23/24
47
39
38
16
15
Short-
circuited
48
VGE=15 V
V
22
IE
23/24
47
39
38
16
15
V
Short-
circuited
48
Short-
circuited
22
IE
23/24
47
39
38
16
15
Short-
circuited
48
V
Short-
circuited
22
Tr1 Tr2 Di1 Di2
VCEsat test circuit VEC test circuit
～
t
tf
tr
td(on)
iC
10%
90 %
90 %
vGE
VCC
iE
iC
RG
-VGE
+VGE
-VGE
Load
～
～
～
0 V
0 A
+
0
VCE
VGE 0 V
td(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
Switching characteristics test circuit and waveforms trr, Qrr test waveform
0.1×I
CM
I
CM
V
CC
v
CE
i
C
t
0
t
i
0.1×V
CC
0.1×V
CC
V
CC
I
CM
v
CE
i
C
t0 0.02×I
CM
t
i
I
EM
v
EC
i
E
t0 V
t
i
t
V
CC
0 A
IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
6 Feb. 2011
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
Tj=25 °C (Chip) VGE=15 V (Chip)
COLLECTOR CURRENT IC (A)
0
50
100
150
200
250
300
0246810
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200 250 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Tj=25 °C (Chip) G-E short-circuited (Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
EMITTER CURRENT IE (A)
10
100
1000
0123
GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
Tj=150 °C
Tj=125 °C
Tj=25 °C
VGE=20 V
12 V
11 V
10 V
9 V
13.5 V
15 V
Tj=150 °C
Tj=125 °C
Tj=25 °C
IC=300 A
IC=150 A
IC=60 A
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
7 Feb. 2011
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
--------------- : T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, IC=150 A, VGE=±15 V, INDUCTIVE LOAD
--------------- : T j=150 °C, - - - - -: Tj=125 °C
SWITCHING TIME (ns)
10
100
1000
10 100 1000
SWITCHING TIME (ns)
10
100
1000
1 10 100
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
--------------- : T j=150 °C, - - - - -: Tj=125 °C
VCC=600 V, IC/IE=150 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
--------------- : T j=150 °C, - - - - -: Tj=125 °C
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
0.1 1 10 100
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
td(on)
tr
tf
td(off)
Eon
Eoff
Err
Eon
Eoff
Err
td(off)
tr
tf
td(on)
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
8 Feb. 2011
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj=25 °C
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
--------------- : T j=150 °C, - - - - -: Tj=125 °C
CAPACITANCE (nF)
0.01
0.1
1
10
100
0.1 1 10 100
trr (ns), Irr (A)
10
100
1000
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
VCC=600 V, IC=150 A, Tj=25 °C Single pulse, TC=25°C
GATE-EMITTER VOLTAGE VGE (V)
0
5
10
15
20
0 100 200 300 400 500
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rth(j-c)Q=0.13 K/W, Rth(j-c)D=0.23 K/W
GATE CHARGE QG (nC) TIME (S)
Cies
Coes
Cres
Irr
trr
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
9 Feb. 2011
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