
ACS108-5Sx
2/8
Symbol Parameter Value Unit
VDRM /
VRRM Repetitive peak off-state voltage Tj = 125 °C 500 V
IT(RMS) RMS on-state current full cycle sine
wave 50 to 60 Hz TO-92 Tlead = 75 °C 0.8 A
TO-92 Tamb = 60 °C 0.3 A
SOT-223 Tamb = 75 °C 0.8 A
ITSM Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave F =50 Hz 7.3 A
F =60 Hz 8 A
dI/dt Critical rate of repetitive rise of on-state current
IG= 20mA with tr = 100ns F =120 Hz 100 A/µs
VPP Non repetitive line peak pulse voltage note 1 2kV
Tstg Storage temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 30 to + 125 °C
Tl Maximum lead temperature for soldering during 10s 260 °C
Note 1: according to test described by IEC61000-4-5 standard & Figure 3.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
PG (AV) Average gate power dissipation 0.1 W
IGM Peak gate current (tp = 20µs) 1 A
VGM Peak positive gate voltage (respect to the pin COM) 5 V
SWITCH GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient TO-92 150 °C/W
SOT-223 (*) 60 °C/W
Rth (j-l) Junction to lead for full AC line cycle conduction TO-92 60 °C/W
Rth (j-t) Junction to tab for full AC line cycle conduction SOT-223 25 °C/W
(*) : with 5cm2copper (e=35µm) surface under tab
THERMAL RESISTANCES
Symbol Test Conditions Values Unit
IGT VOUT=12V RL=140ΩTj=25°C MAX. 10 mA
VGT VOUT=12V RL=140ΩTj=25°C MAX. 1 V
VGD VOUT=VDRM RL=3.3kΩTj=125°C MIN. 0.15 V
IHIOUT= 100mA gate open Tj=25°C TYP. 25 mA
MAX. 60 mA
ILIG= 20mA Tj=25°C TYP. 30 mA
MAX. 65 mA
VTM IOUT = 1.1A tp=500µs Tj=25°C MAX. 1.3 V
IDRM
IRRM VOUT =V
DRM
VOUT =V
RRM Tj=25°C MAX. 2 µA
Tj=125°C MAX. 200 µA
dV/dt VOUT=400V gate open Tj=110°C MIN. 500 V/µs
(dI/dt)c (dV/dt)c=10V/µs Tj=110°C MIN. 0.1 A/ms
(dI/dt)c* (dV/dt)c = 15V/µs Iout < 0 (note 3) Tj=110°C MIN. 0.3 A/ms
VCL ICL = 1mA tp=1ms Tj=25°C TYP. 600 V
ELECTRICAL CHARACTERISTICS
For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3