PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: * * PNP Silicon Power Switching Transistors Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: (Ta = 25C unless otherwise specified) Characteristic Symbol BC160-16 BC161-16 40 60 Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO 5 IC 1 Collector Current Continuous Power Dissipation at Ta = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Operating Storage Temperature Range 0.8 4.57 PD 4 22.73 Tj, Tstg -65 to +200 Junction to Ambient in Free Air Rth(j-a) 219 Junction to Case Rth(j-c) 44 Unit V A W mW/C C Thermal Resistance C/W www.element14.com www.farnell.com www.newark.com Page <1> 22/10/12 V1.0 PNP Medium Power Transistor Electrical Characteristics: (Ta = +25C unless otherwise specified) Parameter Symbol Test Condition Min. VCES IC = 100A, VBE = 0 BC160-16 BC161-16 40 60 *VCEO IC = 30mA, IB = 0 BC160-16 BC161-16 40 60 VEBO IE = 100A, IC = 0 5 Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current DC Current Gain ICES *hFE VCE = 40V, VBE = 0, VCE = 60V, VBE = 0, BC160-16 BC161-16 Ta = 150C VCE = 40V, VBE = 0, BC160-16 VCE = 60V, VBE = 0, BC161-16 IC = 100mA, VCE = 1V BC160-16/BC161-16 Group-6 Group-10 Group-16 IC = 1A, VCE = 1V BC160-16/BC161-16 Group-6 Group-10 Group-16 Collector Emitter Saturation Voltage *VCE(sat) IC = 1A, IB = 0.1A Base Emitter on Voltage *VBE(on) IC = 1A, VCE = 1V Transition Frequency fT IC = 50mA, VCE = 10V, f = 20MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz Input Capacitance Cib VEB = 10V, IC = 0, f = 1MHz ton IC = 150mA, IB1 = 5A toff IC = 100mA, IB1 = IB2 = 5A Typ. Max. - Unit V - 100 100 nA 100 100 40 40 63 100 - 400 100 160 250 26 15 20 30 - A - - 1 1.7 V Dynamic Characteristics 50 - - 30 180 MHz pF Switching Characteristics Turn On Time Turn Off Time 500 - - 650 ns *Pulsed : Pulse Duration 300s, Duty Cycle 1% www.element14.com www.farnell.com www.newark.com Page <2> 22/10/12 V1.0 PNP Medium Power Transistor TO-39 Metal Can Package Dim. Min. Max. A 8.5 9.39 B 7.74 8.5 C 6.09 6.6 D 0.4 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.7 - L 42 48 Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Part Number Table Description Transistor, PNP, TO-39 Part Number BC160-16 BC161-16 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 22/10/12 V1.0