2SB772-R
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=10mAdc, I
B=0)
30 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
40 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(V CB=40Vdc, IE=0)
--- 1.0 uAdc
ICEO Collector Cutoff Current
(V CE=30Vdc, IB=0)
--- 1.0 uAdc
IEBO Emitter Cutoff Current
(V EB=6.0Vdc, I
C=0)
--- 1.0 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=1.0Adc, VCE=2.0Vdc) 60 400 ---
hFE(2) DC Current Gain
(I
C=100mAdc, VCE=2.0Vdc) 32 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc) --- 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz) 50 --- MHz
CLASSIFICATION OF HFE (1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
0.291 0.3077.40 7.80
0.417 0.433 10.60 11.00
0.602 0.618 15.30 15.70
4 1 3.90 4.10
0.118 0.126 3.00 3.20
0.026 0.034 0.66 0.86
0.046 0.054 1.17 1.37
0.090TYP 2.290TYP
0.098 0.114 2.50 2.90
D
B
N
A
C
E
F
G
Q
K
M
N 0.043 0.059 1.10 1.50
Q 0.018 0.024 0.45 0.60
L
JPIN 1. EMITTER
PIN 2. COLLECTOR
PIN 3. BASE
1 2 3
L 0.083 0.091 2.10 2.30
M 0.000 0.012 0.00 0.30
DIMENSIONS
2SB772-O
2SB772-Y
2SB772-GR
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.