BAR 63-02W
Semiconductor Group Sep-07-19981
Silicon PIN Diode
• PIN diode for high speed switching
of RF signals
• Low forward resistance, small capacitance
small inductance
• Very low capacitance
• For frequencies up to 3 GHz
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BAR 63-02W G Q62702-A1211 1 = C 2 = A SCD-80
Maximum Ratings
Parameter ValueSymbol Unit
Diode reverse voltage V50
V
R
Forward current 100
I
FmA
Total power dissipation,
T
S = 115 °C
P
tot mW250
Junction temperature
T
j
°C150
Operating temperature range
T
op -55 ...+150 °C
Storage temperature
T
st
g
-55 ...+150
Thermal Resistance
Junction - ambient 1)
R
thJA ≤ 220 K/W
Junction - soldering point
R
thJS ≤ 140
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BAR 63-02W
Semiconductor Group Sep-07-19982
Electrical Characteristics at
T
A = 25 =C, unless otherwise specified.
Parameter Symbol UnitValues
min. typ. max.
DC characteristics
-
V
(BR) 50Breakdown voltage
I
(BR) = 5 µA - V
Reverse current
V
R = 35 V µA
I
R- 10-
Forward voltage
I
F = 100 mA
V
F- 0.95 1.2 V
AC characteristics
Diode capacitance
V
R = 0 V,
f
= 100 MHz
V
R = 5 V,
f
= 1 MHz
C
T
-
-
0.3
0.21
-
0.3
pF
Case capacitance
f
= 1 MHz
C
C- 0.09 -
Forward resistance
I
F = 5 mA,
f
= 100 MHz
I
F = 10 mA,
f
= 100 MHz
r
f
-
-
1.2
1
2
-
Ω
Charge carrier life time
I
F = 10 mA,
I
R = 6 mA,
I
R = 3 mA τrr - 75 - µs
Series inductance
L
s- 0.6 - nH
Semiconductor Group 2 1998-11-01
BAR 63-02W
Semiconductor Group Sep-07-19983
Forward current
I
F =
f
(
T
A*;
T
S)
*): mounted on alumina 15mm x 16.7mm x 0.7m
m
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
5
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
S
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
T
A
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax /
I
FDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
-
I
Fmax /
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
BAR 63-02W
Semiconductor Group Sep-07-19984
Diode capacitance
C
T
= f
(
V
R)
f
= 1MHz
0 5 10 15 20 V30
V
R
0.0
0.1
0.2
0.3
0.4
pF
0.6
C
T
Forward resistance
r
f =
f
(
I
F)
f
= 100MHz
10 -2 10 -1 10 0 10 1 10 2 10 3
mA
I
F
-1
10
0
10
1
10
2
10
3
10
Ohm
R
F
Forward current
I
F =
f
(
V
F)
T
A = 25°C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1.0
V
F
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
I
F
Semiconductor Group 4 1998-11-01
