IRFBC40 - Intersil Corporation

4-263

File Number

2157.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRFBC40

6.2A, 600V, 1.200 Ohm, N-Channel Power

MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17426.

Features

• 6.2A, 600V

•r

DS(ON) = 1.200Ω

• Single Pulse Avalanche Energy Rated

• Simple Drive Requirements

• Ease of Paralleling

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

IRFBC40 TO-220AB IRFBC40

NOTE: When ordering, include the entire part number.

DRAIN (FLANGE)

GATE

SOURCE

DRAIN

Data Sheet July 1999

4-264

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRFBC40 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 600 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 600 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID6.2 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID3.9 A

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD125 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 570 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 11) 600 - - V

Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC--250µA

On-State Drain Current (Note 4) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 6.2 - - A

Gate to Source Leakage IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A (Figures 9, 10) - 0.97 1.2 Ω

Forward Transconductance (Note 4) gfs VDS ≥ 100V, IDS = 3.4A (Figure 13) 4.7 70 - S

Turn-On Delay Time td(ON) VDD = 300V, ID≈ 6.2A, RG = 9.1Ω, VGS = 10V,

RL=47Ω Switching Speeds are Essentially

ndependent of Operating Temperature

-1320ns

Rise Time tr-1827ns

Turn-Off Delay Time td(OFF) -5583ns

Fall Time tf-2030ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS

(Figure14) GateChargeisEssentially Independent of

Operating Temperature

-4060nC

Gate to Source Charge Qgs - 5.5 - nC

Gate to Drain “Miller” Charge Qgd -20-nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 12) - 1300 - pF

Output Capacitance COSS - 160 - pF

Reverse Transfer Capacitance CRSS -45-pF

Internal Drain Inductance LDMeasured from the Drain

Lead, 6mm (0.25in) from

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 4.5 - nH

Internal Source Inductance LSMeasured from the Source

Lead, 6mm (0.25in) from

Header to Source Bonding

Pad

- 7.5 - nH

Thermal Resistance Junction to Case RθJC - - 1.0 oC/W

Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 80 oC/W

IRFBC40

4-265

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

- - 6.2 A

Pulse Source to Drain Current (Note 3) ISDM - - 25 A

Diode Source to Drain Voltage (Note 2) VSD TJ = 25oC, ISD = 6.2A, VGS = 0V (Figure 8) - - 1.5 V

Reverse Recovery Time trr TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 8.0 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ=25

oC, L = 16mH, RG=25Ω, peak IAS = 6.8A

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 10025

ID, DRAIN CURRENT (A)

125 150

0.1

10-2

10-5 10-4 10-3 0.1 1 10

t1, RECTANGULAR PULSE DURATION (s)

10-3

ZθJC, NORMALIZED TRANSIENT

THERMAL IMPEDANCE (oC/W)

DUTY FACTOR: D = t1/t2

PDM

NOTES:

PEAK TJ= PDM x ZθJC x RθJC + TC

0.02

0.01

0.5

0.1

0.2

0.05

0.02

SINGLE PULSE

IRFBC40

4-266

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

110

102

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V) 103

102

10µs

100µs

1ms

10ms

TJ = MAX RATED

SINGLE PULSE

TC = 25oC

OPERATION IN THIS REGION

IS LIMITED BY rDS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

60 120 180 2400 300

ID, DRAIN CURRENT (A)

VGS = 5.0V

2VGS = 4.5V

VGS = 4.0V

VGS = 5.5V

VGS = 10V

VGS = 6.0V PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

36912015

ID, DRAIN CURRENT (A)

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

VGS = 5.5V

VGS = 6.0V

VGS =10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.1

0 246810

TJ = 150oCTJ = 25oC

10-2

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS ≥100V

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

102

0.1

0 0.3 0.6 0.9 1.2 1.5

TJ = 150oC

TJ = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

612

030

2VGS = 20V

VGS = 10V

DRAIN TO SOURCE ON RESISTANCE

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

IRFBC40

4-267

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

3.0

1.8

0.6

80-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

2.4

1.2

060 120 160

-20-40 20 40 100 140

ON RESISTANCE

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID = 3.4A, VGS = 10V

1.25

1.05

0.85

60-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

1.15

0.95

0.75 -20 20 100 160

BREAKDOWN VOLTAGE

0-40 40 80 120 140

ID = 250µA

0 2 10 20 50 102

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

3000

2400

1800

1200

600

CRSS

CISS

COSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

ID, DRAIN CURRENT (A)

2468010

gfs, TRANSCONDUCTANCE (S)

TJ = 150oC

TJ = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS ≥100V

Qg, GATE CHARGE (nC)

12 24 36 48060

GATE TO SOURCE VOLTAGE (V)

VDS = 360V

VDS = 240V

VDS = 120V

ID = 6.2A

IRFBC40

4-268

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

IG(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRFBC40

4-269

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

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IRFBC40