B2M, B4M, B6M
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Revision: 16-Aug-13 1Document Number: 88898
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognized, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
PRIMARY CHARACTERISTICS
Package MBM
IF(AV) 0.5 A
VRRM 200 V, 400 V, 600 V
IFSM 30 A
IR5 μA
VF at IF = 0.5 A 1.0 V
TJ max. 150 °C
Diode variations Quad
~
~
Case Style MBM
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2M B4M B6M UNIT
Device marking code B2 B4 B6
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Maximum RMS voltage VRMS 140 280 420 V
Maximum DC blocking voltage VDC 200 400 600 V
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB IF(AV) 0.5
(1) A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method) IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t5.0A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL B2M B4M B6M UNIT
Maximum instantaneous forward
voltage drop per diode IF = 0.5 A VF 1.0 V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C IR 5.0 μA
TA = 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
B2M, B4M, B6M
www.vishay.com Vishay General Semiconductor
Revision: 16-Aug-13 2Document Number: 88898
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2M B4M B6M UNIT
Typical thermal resistance (1) RJA 90 °C/W
RJL 40
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B2M-E3/45 0.22 45 100 Tube
020 40 60 80 100 120 140 160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Glass
Epoxy
PCB
Resistive or Inductive Load
Average Forward Rectified Current (A)
Ambient Temperature (°C)
110 100
0
5
10
15
20
25
30
35
Number of Cycles
f = 50 Hz
Peak Forward Surge Current (A)
1.0 Cycle
0.4 0.6 0.8 1.0 1.2 1.4
0.01
0.1
1
10
0.5 0.7 0.9 1.1 1.3
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
20 40 60 80 100
0.01
0.1
1
10
100
90
70
50
30
10
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
B2M, B4M, B6M
www.vishay.com Vishay General Semiconductor
Revision: 16-Aug-13 3Document Number: 88898
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
0.106 (2.70)
0.090 (2.30)
0.147 (3.73)
0.137 (3.48)
0.161 (4.10)
0.144 (3.65)
0.190 (4.83)
0.179 (4.55)
0.029 (0.74)
0.017 (0.43) 0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
10° to 15°
0.028 (0.71)
0.020 (0.51)
0.016 (0.41)
0.006 (0.15)
0.148 (3.75)
0.132 (3.35)
0.049 (1.24)
0.039 (0.99)
Case Style MBM
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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