2SA1425
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1425
Power Amplifier Applications
Driver-Stage Amplifier Applications
• Complementary to 2SC3665.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −120 V
Collector-emitter voltage VCEO −120 V
Emitter-base voltage VEBO −5 V
Collector current IC −800 mA
Base current IB −80 mA
Collector power dissipation PC 1000 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −120 V, IE = 0 ― ― −100 nA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −120 ― ― V
Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V
DC current gain hFE
(Note) VCE = −5 V, IC = −100 mA 80 ― 240
Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― ― −1.0 V
Base-emitter voltage VBE V
CE = −5 V, IC = −500 mA ― ― −1.0 V
Transition frequency fT V
CE = −5 V, IC = −100 mA ― 120 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― ― 40 pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7D101A
Weight: 0.2 g (typ.)
A1425
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1425
2004-07-07
2
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (mA)
)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
5
−0.002
−0.1
−0.005
−0.01
−0.03
−0.05
−0.1
−0.3
−0.5
−1
3
−1 −3 −10 −30 −100
*: Single nonrepetitive pulse
Ta = 2 5 ° C
Curves must be derated linearly
with in crease in temperature.
IC max (continuous)
IC max (pulsed)*1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
−0.3 −300
−1000
0
0
−800
−600
−400
−200
−2 −4 −6 −8 −10 −12
Common emitter
Ta = 2 5 ° C
−5
−15 −10
IB = −1 mA
−7
−3
−4
−2
−300
Common emitter
IC/IB = 10
−3
−0.03
−3
−1
−0.3
−0.1
−0.05
−10 −30 −100 −1000
Ta = 100°C
−25
25
−0.5
20 0 40 60 100 120
1.2
0.4
0
0.2
0.6
0.8
80 140 160
1.0
1000
20
−3
500
300
100
50
−10 −30 −100 −300 −1000
Ta = 100°C
25
−25
Common emitter
VCE = −5 V
−600
−1000
0
0
−800
−400
−200
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Ta = 100°C 25 −25
Common emitter
VCE = −5 V
2SA1425
2004-07-07
3
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Handbook” etc..
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030619EAA
RESTRICTIONS ON PRODUCT USE
