IGBT MO DUL E
MBN1200E25C
Silicon N-channel IGBT
FEATURES
∗ High thermal fatigue dur abilit y.
(delta Tc=70℃, N>30,000cycles)
∗ Low noise due to ultra soft fast recovery diode.
∗ High speed, low loss IG BT module.
∗ Low driving pow er due to low input
capacitance MOS gate.
∗ High reliability, high durabilit y module.
∗ Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item Symbol Unit MBN1200E25C
Collector Emitter Voltage VCES V2,500
Gate Emitter Voltage VGES V±20
DC IC1,200
Collector Current 1ms ICp A2,400
DC IF1,200
Forward Current 1ms IFM A2,400
Junction Temperature TjoC-40 ~ +125
Storage Temperature Tstg oC-40 ~ +125
Isolation Voltage VISO VRMS 4,000(AC 1 minute)
Terminals (M4/M8) - 2/10 (1)
Screw Torque Mounting (M6) -N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS (Tc=25oC )
Item Symbol Unit Min. Typ. Max. Test Conditions
- - 12 VCE=2,500V, VGE=0V, Tj=25oC
Collector Emitter Cut-Off Current I CES mA -20 60 VCE=2,500V, VGE=0V, Tj=125oC
Gate Emitter Leakage Current IGES nA -500 -+500 VGE=±20V, VCE=0V, Tj=25oC
Collector Emitter Saturation Voltage VCE
(
sat
)
V - 3.0 3.5 IC=1,200A, VGE=15V, Tj=125oC
Gate Emitter Threshold Voltage VGE
(
TO
)
V4.0 5.0 6.0 VCE=15V, IC=120mA, Tj=25oC
Input Capacitance Cies nF -175 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Internal Gate Resistance Rge Ω-2.2 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Rise Time tr-3.2 4.4 VCC=1,000V, Ic=1,200A
Turn On Time ton -4.2 5.2 L=100nH
Fall Time tf-1.9 3.4 RG(ON/OFF)=6.8/1.5Ω (3)
Switching Times
Turn Off Time toff
µs
-3.4 5.6 VGE=±15V, Tj=125oC
Peak Forward Voltage Drop VFM V - 2.0 2.5 Ic=1,200A, VGE=0V, Tj=125oC
Reverse Recovery Time trr µs - 0.9 1.4 Vcc=1,000V, Ic=1,200A, L=100nH
Tj=125oC
Turn On Loss Eon
(
10%
)
J/P -1.8 2.3
Turn Off Loss Eoff
(
10%
)
J/P -1.2 1.7
Reverse Recovery Loss Err
(
10%
)
J/P -0.35 0.85
VCC=1,000V, Ic=1,200A, L=100nH
RG(ON/OFF)=6.8/1.5Ω (3)
VGE=±15V, Tj=125oC
Stray inductance module LSCE nH -12 -
IGBT Rth(j-c) - - 0.0085
Thermal I mpedance FWD Rth(j-c) oC/W - - 0.017 Junction to case
Contact Thermal Impedance Rth(c-f) oC/W - 0.006 -Case to fin
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
Counter arm IGBT VGE=-15V
Spec.No.IGBT -S P-05023 R0
OUTLINE DRAWING
Weight : 1300(g)
Unit in mm
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